Patent US6057189A successfully refreshed from Google Patents.
US6057189A
Expired / Lapsed
US
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Method of fabricating capacitor utilizing an ion implantation method
Assignee: United Microelectronics Corp
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Filing: 1998-02-17
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Granted: 2000-05-02
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Expires: 2018-02-17
Abstract
Abstract A method of fabricating a capacitor, comprising the steps of: providing a conductive layer over a semiconductor substrate having a transistor formed thereon to connect a source/drain region of the transistor; forming a hemispherical grained silicon layer over the conductive layer; using an implantation method to implant ions into the hemispherical grained silicon layer; performing a thermal treatment process to convert the ions into a barrier layer over the hemispherical grained silicon layer; performing a wet etching process to clean a surface of the barrier layer; forming a dielectric layer over the barrier layer and forming a top electrode over the dielectric layer.
Inventors
- 👤 Kuo-Tai Huang
- 👤 Wen-Yi Hsieh
- 👤 Wen-Kuan Yeh
- 👤 Tri-Rung Yew
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:04
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
113 words
A method of fabricating a capacitor, comprising the steps of: forming a conductive layer over a semiconductor substrate having a transitor formed thereon to connect a source/drain region of the transistor; forming a hemispherical grained silicon layer on the conductive layer; implanting ions into a surface region of the hemispherical grained silicon layer by using an implantation method; performing a thermal treatment process to convert the ions into a barrier layer on the hemispherical grained silicon layer; performing a wet etching process to clean a surface of the barrier layer but without removing the barrier layer; forming a dielectric layer on the barrier layer; and forming a top electrode on the dielectric layer.
Claim 2
Independent Claim
113 words
A method of fabricating a capacitor, comprising the steps of: forming a conductive layer over a semiconductor substrate having a transitor formed thereon to connect a source/drain region of the transistor; forming a hemispherical grained silicon layer on the conductive layer; implanting ions into a surface region of the hemispherical grained silicon layer by using an implantation method; performing a thermal treatment process to convert the ions into a barrier layer on the hemispherical grained silicon layer; performing a wet etching process to clean a surface of the barrier layer but without removing the barrier layer; forming a dielectric layer on the barrier layer; and forming a top electrode on the dielectric layer.
Claim 3
Dependent Claim
27 words
A method according to claim 1, wherein further includes performing a rapid thermal process between the steps of performing the wet etching and forming the dielectric layer.
Claim 4
Dependent Claim
19 words
A method according to claim 2, wherein the step of performing the rapid thermal process comprises using nitrogen gases.
Claim 5
Dependent Claim
23 words
A method according to claim 1, wherein the method for forming the conductive layer comprises using a low pressure chemical vapor deposition method.
Claim 6
Dependent Claim
40 words
A method according to claim 1, wherein the step for forming the hemispherical grained silicon layer comprises using a low pressure chemical vapor deposition method, and the hemispherical grained silicon layer substantially covers entire upper surface of the conductive layer.
Claim 7
Dependent Claim
17 words
A method according to claim 1, wherein the implantation method has a energy of about 10-30 KeV.
Claim 8
Dependent Claim
22 words
A method according to claim 1, wherein of the ions have a concentration of about 5×10 14 -5×10 15 /cm 2 .
Claim 9
Dependent Claim
12 words
A method according to claim 1, wherein the ions comprise nitrogen ions.
Claim 10
Dependent Claim
21 words
A method according to claim 1, wherein the step of performing the thermal treatment process comprises performing a rapid thermal process.
Claim 11
Dependent Claim
20 words
A method according to claim 9, wherein the step of performing the rapid thermal process comprises using nitrogen dioxide gases.
Claim 12
Dependent Claim
19 words
A method according to claim 9, wherein the step of performing the rapid thermal process comprises using oxygen gases.
Claim 13
Dependent Claim
22 words
A method according to claim 1, wherein the step of performing the wet etching process comprises using a diluted hydrogen fluoride solution.
Claim 14
Dependent Claim
23 words
A method according to claim 1, wherein the method for forming the dielectric layer comprises using a low pressure chemical vapor deposition method.
Claim 15
Dependent Claim
22 words
A method according to claim 1, wherein the step of forming the dielectric layer comprises using a temperature of about 700-950° C.
Claim 16
Dependent Claim
19 words
A method according to claim 1, wherein the step of forming the top electrode comprises using a sputtering method.
Claim 17
Dependent Claim
13 words
A method according to claim 1, wherein the dielectric layer comprises tantalum oxide.
Claim 18
Dependent Claim
13 words
A method according to claim 1, wherein the top electrode comprises titanium nitride.
Claim 19
Dependent Claim
13 words
A method according to claim 1, wherein the conductive layer comprises doped polysilicon.
Claim 20
Dependent Claim
13 words
A method according to claim 1, wherein the barrier layer comprises silicon oxynitride.
Claim 21
Dependent Claim
13 words
A method according to claim 1, wherein the barrier layer comprises silicon nitride.
Claim 22
Independent Claim
98 words
A method of fabricating a capacitor, comprising the steps of: forming a conductive layer over a semiconductor substrate having a transistor formed thereon to connect a source/drain region of the transistor; implanting ions into a surface region of the conductive layer by using an implantation method; performing a thermal treatment process to convert the ions into a barrier layer on the conductive layer; performing a wet etching process to clean a surface of the barrier layer without removing the barrier layer; forming a dielectric layer on the barrier layer; and forming a top electrode on the dielectric layer.
Claim 23
Independent Claim
98 words
A method of fabricating a capacitor, comprising the steps of: forming a conductive layer over a semiconductor substrate having a transistor formed thereon to connect a source/drain region of the transistor; implanting ions into a surface region of the conductive layer by using an implantation method; performing a thermal treatment process to convert the ions into a barrier layer on the conductive layer; performing a wet etching process to clean a surface of the barrier layer without removing the barrier layer; forming a dielectric layer on the barrier layer; and forming a top electrode on the dielectric layer.
Claim 24
Dependent Claim
27 words
A method according to claim 21, wherein further includes performing a rapid thermal process between the steps of performing the wet etching and forming the dielectric layer.
Claim 25
Dependent Claim
19 words
A method according to claim 22, wherein the step of performing the rapid thermal process comprises using nitrogen gases.
Claim 26
Dependent Claim
23 words
A method according to claim 21, wherein the method for forming the conductive layer comprises using a low pressure chemical vapor deposition method.
Claim 27
Dependent Claim
17 words
A method according to claim 21, wherein the implantation method has a energy of about 10-30 KeV.
Claim 28
Dependent Claim
21 words
A method according to claim 21, wherein the ions have a concentration of about 5×10 14 -5×10 15 /cm 2 .
Claim 29
Dependent Claim
12 words
A method according to claim 21, wherein the ions comprise nitrogen ions.
Claim 30
Dependent Claim
21 words
A method according to claim 21, wherein the step of performing the thermal treatment process comprises performing a rapid thermal process.
Claim 31
Dependent Claim
20 words
A method according to claim 28, wherein the step of performing the rapid thermal process comprises using nitrogen dioxide gases.
Claim 32
Dependent Claim
19 words
A method according to claim 28, wherein the step of performing the rapid thermal process comprises passing oxygen gases.
Claim 33
Dependent Claim
22 words
A method according to claim 21, wherein the step of performing the wet etching process comprises using a diluted hydrogen fluoride solution.
Claim 34
Dependent Claim
23 words
A method according to claim 21, wherein the method for forming the dielectric layer comprises using a low pressure chemical vapor deposition method.
Claim 35
Dependent Claim
22 words
A method according to claim 21, wherein the step of forming the dielectric layer comprises using a temperature of about 700-950° C.
Claim 36
Dependent Claim
19 words
A method according to claim 21, wherein the step of forming the top electrode comprises using a sputtering method.
Claim 37
Dependent Claim
13 words
A method according to claim 21, wherein the dielectric layer comprises tantalum oxide.
Claim 38
Dependent Claim
13 words
A method according to claim 21, wherein the top electrode comprises titanium nitride.
Claim 39
Dependent Claim
13 words
A method according to claim 21, wherein the conductive layer comprises doped polysilicon.
Claim 40
Dependent Claim
13 words
A method according to claim 21, wherein the barrier layer comprises silicon oxynitride.
Claim 41
Dependent Claim
13 words
A method according to claim 21, wherein the barrier layer comprises silicon nitride.
References Cited (Backward Citations)
US5429972A
Cited
US5670406A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-02 | 2003-11-01 | 2004-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-02 | 2007-11-01 | 2008-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-02 | 2011-11-01 | 2012-05-02 | $7700.00 | Window Closed / Lapsed |