US5670406A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a tooth shaped capacitor
Assignee: Vanguard International Semiconductor Corp
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Filing: 1997-01-30
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Granted: 1997-09-23
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Expires: 2017-01-30
Abstract
Abstract A method of manufacturing a capacitor for use in semiconductor memories is disclosed herein. The present invention includes forming anti-oxidizing regions from dot silicon for use as an oxidation mask to oxidize a polysilicon layer. Further, a silicon oxide layer is used as an etching mask to form a bottom storage node of a capacitor. An etching process is performed to etch a portion of the first polysilicon layer. Next, the silicon oxide layer is removed to define the bottom storage node. Utilizing the bottom storage node structure, the present invention can be used to increase the surface area of the capacitor.
Inventors
- 👤 Horng-Huei Tseng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:50
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; Y; Y10; Y10S; Y10S148/00; Y10S148/138; Y10S438/00; Y10S438/942; Y10S438/947
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
142 words
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising the steps of: forming a first conductive layer over said substrate; forming a dot silicon layer on said first conductive layer; doping nitrogen into said dot silicon layer using an oblique angle to form anti-oxidation regions; oxidizing said first conductive layer using said anti-oxidation regions as a mask to form a silicon oxide layer on said first conductive layer; removing said anti-oxidation regions and a portion of said first conductive layer using said silicon oxide layer a mask; patterning and etching said first conductive layer to form a first storage node of said capacitor; forming a dielectric layer on the surface of said first storage node of said capacitor; and forming a second conductive layer over said dielectric layer to act as a second storage node of said capacitor.
Claim 2
Independent Claim
142 words
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising the steps of: forming a first conductive layer over said substrate; forming a dot silicon layer on said first conductive layer; doping nitrogen into said dot silicon layer using an oblique angle to form anti-oxidation regions; oxidizing said first conductive layer using said anti-oxidation regions as a mask to form a silicon oxide layer on said first conductive layer; removing said anti-oxidation regions and a portion of said first conductive layer using said silicon oxide layer a mask; patterning and etching said first conductive layer to form a first storage node of said capacitor; forming a dielectric layer on the surface of said first storage node of said capacitor; and forming a second conductive layer over said dielectric layer to act as a second storage node of said capacitor.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein said first conductive layer is chosen from the group of doped polysilicon or in-situ doped polysilicon.
Claim 4
Dependent Claim
20 words
The method of claim 2, wherein said first conductive layer has a thickness in a range of about 2000-6000 angstroms.
Claim 5
Dependent Claim
14 words
The method of claim 1, wherein said dot silicon layer is a HSG-Si layer.
Claim 6
Dependent Claim
21 words
The method of claim 4, wherein said HSG-Si layer is formed to have a thickness of a range about 50-1000 angstroms.
Claim 7
Dependent Claim
95 words
The method of claim 2, wherein said step of removing said anti-oxidation regions and a portion of said first conductive layer is performed by an etching using an etchant chosen from the group of C 2 F 6 , SF 6 , CF 4 +O 2 , CF 4 +Cl 2 , CF 4 +HBr, HBr/Cl 2 /O 2 , Cl 2 , HBr/O 2 , BCl 3 /Cl 2 , SiCl 4 /Cl 2 , SF 6 , SF 6 /Br 2 , CCl 4 /Cl 2 , or CH 3 F/Cl 2 .
Claim 8
Dependent Claim
19 words
The method of claim 1, wherein the angle of said oblique angle implant is from 0 to 45 degree.
Claim 9
Dependent Claim
21 words
The method of claim 1, wherein said second conductive layer is selected from the group of doped polysilicon, in-situ doped polysilicon.
Claim 10
Dependent Claim
18 words
The method of claim 1, wherein the temperature of oxidizing said first conductive layer is about 700°-900° C.
Claim 11
Independent Claim
115 words
A method of forming a silicon structure, said method comprising the steps of: forming a silicon layer over a semiconductor substrate; forming a dot silicon layer on said first conductive layer; doping nitrogen into said dot silicon layer at an oblique angle to form anti-oxidation regions; performing a thermal oxidation to said silicon layer in an oxygen ambient using said anti-oxidation regions as a mask to form a silicon oxide layer on said silicon layer; removing said anti-oxidation regions and a portion of said silicon layer using said silicon oxide layer as a mask; removing said silicon oxide layer on said silicon layer; and patterning and etching said silicon layer to form said silicon structure.
Claim 12
Independent Claim
115 words
A method of forming a silicon structure, said method comprising the steps of: forming a silicon layer over a semiconductor substrate; forming a dot silicon layer on said first conductive layer; doping nitrogen into said dot silicon layer at an oblique angle to form anti-oxidation regions; performing a thermal oxidation to said silicon layer in an oxygen ambient using said anti-oxidation regions as a mask to form a silicon oxide layer on said silicon layer; removing said anti-oxidation regions and a portion of said silicon layer using said silicon oxide layer as a mask; removing said silicon oxide layer on said silicon layer; and patterning and etching said silicon layer to form said silicon structure.
Claim 13
Dependent Claim
18 words
The method of claim 10, wherein the angle of said oblique implant is from 0 to 45 degree.
Claim 14
Dependent Claim
18 words
The method of claim 10, wherein the temperature of oxidizing said silicon layer layer is about 700°-900° C.
Claim 15
Independent Claim
143 words
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising the steps of: forming a first polysilicon layer over said substrate; forming a HSG-Si layer on said first polysilicon layer; doping nitrogen into said HSG-Si layer at an oblique angle to form anti-oxidation regions; oxidizing said first polysilicon layer using said anti-oxidation regions as a mask to form a silicon oxide layer on said first polysilicon layer; removing said anti-oxidation regions and a portion of said first polysilicon layer using said silicon oxide layer as a mask; removing said silicon oxide layer; patterning and etching said first polysilicon layer to form a first electrode of said capacitor; forming a dielectric layer on the surface of said first electrode of said capacitor; and forming a second polysilicon layer over said dielectric layer to act as a second electrode of said capacitor.
Claim 16
Independent Claim
143 words
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising the steps of: forming a first polysilicon layer over said substrate; forming a HSG-Si layer on said first polysilicon layer; doping nitrogen into said HSG-Si layer at an oblique angle to form anti-oxidation regions; oxidizing said first polysilicon layer using said anti-oxidation regions as a mask to form a silicon oxide layer on said first polysilicon layer; removing said anti-oxidation regions and a portion of said first polysilicon layer using said silicon oxide layer as a mask; removing said silicon oxide layer; patterning and etching said first polysilicon layer to form a first electrode of said capacitor; forming a dielectric layer on the surface of said first electrode of said capacitor; and forming a second polysilicon layer over said dielectric layer to act as a second electrode of said capacitor.
Claim 17
Dependent Claim
21 words
The method of claim 13, wherein said HSG-Si layer is formed to have a thickness of a range about 50-1000 angstroms.
Claim 18
Dependent Claim
19 words
The method of claim 13, wherein the angle of said oblique angle implant is from 0 to 45 degree.
Claim 19
Dependent Claim
18 words
The method of claim 13, wherein the temperature of oxidizing said first polysilicon layer is about 700°-900° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-22 | 2001-03-24 | 2001-09-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-22 | 2005-03-24 | 2005-09-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-22 | 2009-03-24 | 2009-09-23 | $7700.00 | Window Closed / Lapsed |