Patent US5381246A successfully refreshed from Google Patents.
Patent US1809492A successfully refreshed from Google Patents.
Patent US6054880A successfully refreshed from Google Patents.
US6054880A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Circuit with high-voltage output stage
Assignee: STMicroelectronics SA
•
Filing: 1998-04-13
•
Granted: 2000-04-25
•
Expires: 2018-04-13
Abstract
Abstract An integrated circuit includes a high-voltage output stage. The high-voltage output stage, in turn, comprises a first MOS transistor, a second MOS transistor, a current source and a diode. This high-voltage output stage can be improved by the addition of a third MOS transistor, a first bipolar transistor and, possibly, a second bipolar transistor.
Inventors
- 👤 Michel Barou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:17
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/30; H03F3/3001; H03F3/3008; H03F1/00; H03F1/08; H03F1/22; H03F1/223
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
179 words
An integrated circuit comprising: a high-voltage output stage comprising a low-voltage input, a high-voltage output, a first MOS transistor having a gate connected to the low-voltage input and a source connected to a first reference voltage, a second MOS transistor having a drain connected to a second reference voltage and a source connected to the high-voltage output, a current source having a first terminal connected to the second reference voltage and a second terminal connected to a gate of the second MOS transistor, a diode having a first terminal connected to the gate of the second MOS transistor and a second terminal connected to the source of the second MOS transistor, a third MOS transistor having a drain connected to the high-voltage output, a gate connected to a third reference voltage and a source connected to a drain of the first MOS transistor, and a first bipolar transistor having a collector connected to the first terminal of the diode, a base connected to the third reference voltage and an emitter connected to the drain of the first MOS transistor.
Claim 2
Dependent Claim
179 words
An integrated circuit comprising: a high-voltage output stage comprising a low-voltage input, a high-voltage output, a first MOS transistor having a gate connected to the low-voltage input and a source connected to a first reference voltage, a second MOS transistor having a drain connected to a second reference voltage and a source connected to the high-voltage output, a current source having a first terminal connected to the second reference voltage and a second terminal connected to a gate of the second MOS transistor, a diode having a first terminal connected to the gate of the second MOS transistor and a second terminal connected to the source of the second MOS transistor, a third MOS transistor having a drain connected to the high-voltage output, a gate connected to a third reference voltage and a source connected to a drain of the first MOS transistor, and a first bipolar transistor having a collector connected to the first terminal of the diode, a base connected to the third reference voltage and an emitter connected to the drain of the first MOS transistor.
Claim 3
Dependent Claim
32 words
An integrated circuit according to claim 1, wherein the high-voltage output stage further comprises a resistor connected between the emitter of the first bipolar transistor the drain of the first MOS transistor.
Claim 4
Dependent Claim
45 words
An integrated circuit according to claim 1, wherein the high-voltage output stage comprises a second bipolar transistor having a base connected to the third reference voltage, a collector connected to the high-voltage output and an emitter connected to the emitter of the first bipolar transistor.
Claim 5
Dependent Claim
91 words
An integrated circuit according to claim 1, wherein the high-voltage stage further comprises a first resistor and a second resistor being series-connected and defining a node therebetween; wherein said first and second resistors are connected between the emitter of the first bipolar transistor and the drain of the first MOS transistor; and wherein the high-voltage output stage comprises a second bipolar transistor having a base connected to the third reference voltage, a collector connected to the high-voltage output and an emitter connected to the node between said first and second resistors.
Claim 6
Dependent Claim
26 words
An integrated circuit according to claim 1, wherein the current source gives a current that is a function of the voltage present at the low-voltage input.
Claim 7
Dependent Claim
14 words
An integrated circuit according to claim 1, wherein the diode is a Zener diode.
Claim 8
Dependent Claim
19 words
An integrated circuit according to claim 1, wherein the first, second and third MOS transistors are NVDMOS type transistors.
Claim 9
Dependent Claim
46 words
An integrated circuit according to claim 1, wherein the high voltage output stage further comprises: a first capacitor connected between the first terminal of the diode and the low-voltage input; and a second capacitor connected between the second terminal of the diode and the low-voltage input.
Claim 10
Dependent Claim
175 words
A high-voltage output stage comprising: a low-voltage input; a high-voltage output; a first MOS transistor having a gate connected to the low-voltage input and a source connected to a first reference voltage; a second MOS transistor having a drain connected to a second reference voltage and a source connected to the high-voltage output; a current source having a first terminal connected to the second reference voltage and a second terminal connected to a gate of the second MOS transistor; a diode having a first terminal connected to the gate of the second MOS transistor and a second terminal connected to the source of the second MOS transistors; a third MOS transistor having a drain connected to the high-voltage output, a gate connected to a third reference voltage and a source connected to a drain of the first MOS transistor; and a first bipolar transistor having a collector connected to the first terminal of the diode, a base connected to the third reference voltage and an emitter connected to the drain of the first MOS transistor.
Claim 11
Dependent Claim
175 words
A high-voltage output stage comprising: a low-voltage input; a high-voltage output; a first MOS transistor having a gate connected to the low-voltage input and a source connected to a first reference voltage; a second MOS transistor having a drain connected to a second reference voltage and a source connected to the high-voltage output; a current source having a first terminal connected to the second reference voltage and a second terminal connected to a gate of the second MOS transistor; a diode having a first terminal connected to the gate of the second MOS transistor and a second terminal connected to the source of the second MOS transistors; a third MOS transistor having a drain connected to the high-voltage output, a gate connected to a third reference voltage and a source connected to a drain of the first MOS transistor; and a first bipolar transistor having a collector connected to the first terminal of the diode, a base connected to the third reference voltage and an emitter connected to the drain of the first MOS transistor.
Claim 12
Dependent Claim
28 words
A high-voltage output stage according to claim 9, further comprising a resistor connected between the emitter of the first bipolar transistor the drain of the first MOS transistor.
Claim 13
Dependent Claim
42 words
A high-voltage output stage according to claim 9, further comprising a second bipolar transistor having a base connected to the third reference voltage, a collector connected to the high-voltage output and an emitter connected to the emitter of the first bipolar transistor.
Claim 14
Dependent Claim
88 words
A high-voltage output stage according to claim 9, further comprising a first resistor and a second resistor being series-connected and defining a node therebetween; wherein said first and second resistors are connected between the emitter of the first bipolar transistor and the drain of the first MOS transistor; and wherein the high-voltage output stage comprises a second bipolar transistor having a base connected to the third reference voltage, a collector connected to the high-voltage output and an emitter connected to the node between said first and second resistors.
Claim 15
Dependent Claim
27 words
A high-voltage output stage according to claim 9, wherein the current source gives a current that is a function of the voltage present at the low-voltage input.
Claim 16
Dependent Claim
15 words
A high-voltage output stage according to claim 9, wherein the diode is a Zener diode.
Claim 17
Dependent Claim
20 words
A high-voltage output stage according to claim 9, wherein the first, second and third MOS transistors are NVDMOS type transistors.
Claim 18
Dependent Claim
41 words
A high-voltage output stage according to claim 9, further comprising: a first capacitor connected between the first terminal of the diode and the low-voltage input; and a second capacitor connected between the second terminal of the diode and the low-voltage input.
Claim 19
Dependent Claim
177 words
A high-voltage output stage comprising: a low-voltage input; a high-voltage output; a first MOS transistor having a gate connected to the low-voltage input and a source connected to a first reference voltage; a second MOS transistor having a drain connected to a second reference voltage and a source connected to the high-voltage output; a current source having a first terminal connected to the second reference voltage and a second terminal connected to a gate of the second MOS transistor; a zener diode having a first terminal connected to the gate of the second MOS transistor and a second terminal connected to the source of the second MOS transistor; a third MOS transistor having a drain connected to the high-voltage output, a gate connected to a third reference voltage and a source connected to a drain of the first MOS transistor; and a first bipolar transistor having a collector connected to the first terminal of the zener diode, a base connected to the third reference voltage and an emitter connected to the drain of the first MOS transistor.
Claim 20
Dependent Claim
177 words
A high-voltage output stage comprising: a low-voltage input; a high-voltage output; a first MOS transistor having a gate connected to the low-voltage input and a source connected to a first reference voltage; a second MOS transistor having a drain connected to a second reference voltage and a source connected to the high-voltage output; a current source having a first terminal connected to the second reference voltage and a second terminal connected to a gate of the second MOS transistor; a zener diode having a first terminal connected to the gate of the second MOS transistor and a second terminal connected to the source of the second MOS transistor; a third MOS transistor having a drain connected to the high-voltage output, a gate connected to a third reference voltage and a source connected to a drain of the first MOS transistor; and a first bipolar transistor having a collector connected to the first terminal of the zener diode, a base connected to the third reference voltage and an emitter connected to the drain of the first MOS transistor.
Claim 21
Dependent Claim
28 words
A high-voltage output stage according to claim 17, further comprising a resistor connected between the emitter of the first bipolar transistor the drain of the first MOS transistor.
Claim 22
Dependent Claim
42 words
A high-voltage output stage according to claim 17, further comprising a second bipolar transistor having a base connected to the third reference voltage, a collector connected to the high-voltage output and an emitter connected to the emitter of the first bipolar transistor.
Claim 23
Dependent Claim
88 words
A high-voltage output stage according to claim 17, further comprising a first resistor and a second resistor being series-connected and defining a node therebetween; wherein said first and second resistors are connected between the emitter of the first bipolar transistor and the drain of the first MOS transistor; and wherein the high-voltage output stage comprises a second bipolar transistor having a base connected to the third reference voltage, a collector connected to the high-voltage output and an emitter connected to the node between said first and second resistors.
Claim 24
Dependent Claim
27 words
A high-voltage output stage according to claim 17, wherein the current source gives a current that is a function of the voltage present at the low-voltage input.
Claim 25
Dependent Claim
20 words
A high-voltage output stage according to claim 17, wherein the first, second and third MOS transistors are NVDMOS type transistors.
Claim 26
Dependent Claim
42 words
A high-voltage output stage according to claim 17, further comprising: a first capacitor connected between the first terminal of the zener diode and the low-voltage input; and a second capacitor connected between the second terminal of the diode and the low-voltage input.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |