Semiconductor device and manufacturing method of the same

Claim 1

A manufacturing method of semiconductor device comprising oxidizing a part of a semiconductor substrate by selective oxidation to form a field region; forming a silicon oxide film over the surface of the substrate injecting an impurity of reverse conductive type of the semiconductor substrate in part of the semiconductor substrate to form a collector draw-out region; implanting ions at high energy, using a photo resist formed by photolithography as a mask, to form an N well region and a P type element separation region; injecting a P type impurity into the entire surface of a substrate to form a base region, and removing a part of said silicon oxide film on the surface to form an opening; sequentially depositing a polycrystalline silicon film, a silicon oxide film, and a silicon nitride film by chemical vapor deposition (CVD), and implanting ions by using a resist pattern formed by photolithography as a mask, and forming an N type region and a P type region in said polycrystalline silicon film; dividing said polycrystalline silicon film into said N type region and P type region by anisotropic dry etching by using a resist as a mask; injecting ions using a resist as a mask into a base region to form a base correction region; oxidizing the side wall of the polycrystalline silicon film by using the nitride film on the substrate surface as a mask; removing the nitride film, forming metal on the substrate surface by sputtering, and heating to transform the surface of the polycrystalline silicon film into polyside film; forming an interlayer film on the entire surface of the substrate; and forming an opening for contact by dry etching in an interlayer film, and connecting with the metal wiring.