Manufacture of bipolar semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To eliminate the need for the consideration of the allowance of mask alignment on a process, and to obtain an integrated circuit device having excellent high- speed workability by low power consumption by conducting a photoetching process once when an element isolation region is formed and shaping all of the inert base region, active base region and emitter region through self-alignment. CONSTITUTION:An N<+> type buried diffusion layer 102 and an N<-> type epitaxial Iayer 103 are shaped to a P<-> type semiconductor substrate 101, and a pad oxide film 104 is formed onto the surface of the layer 103 and a first silicon nitride film 105, a first polycrystalline silicon film 106 and a silicon nitride film 107 onto the pad oxide film 104. A resist pattern is shaped onto the silicon nitride film 107 by using a photolithographic technique, and trenches 108 are formed at positions, where element isolation oxide films must be shaped, through specified etching while using the resist pattern as a mask. A specified process only by self-alignment is executed without mask alignment with an island region 103a, and an inert base region 114 is formed into the island region 103a, an active base region 117 into the region 114 and an emitter region 119 into the region 117 respectively.

Inventors

• 👤 Shiro Iwamura
• 👤 岩村　志郎

Bibliographic Details