US6054343A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Nitride trench fill process for increasing shallow trench isolation (STI) robustness
Assignee: Texas Instruments Inc
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Filing: 1999-01-20
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Granted: 2000-04-25
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Expires: 2019-01-20
Abstract
Abstract A semiconductor device and method having shallow trench isolation. A pad oxide 24 and silicon 42 are formed on a substrate 20 to form a mask, and the pad oxide 24/silicon 42 mask is then patterned. Portions of the pad oxide 24/silicon 42 mask and the substrate 20 are removed to form trenches 22 in the substrate 20. A nitride fill 40 is deposited over the pad oxide 24/silicon 42 mask and the trenches 22. Advantages of the invention include a more robust STI device without central voids 34 and without edge voids 36 in the trench fill material.
Inventors
- 👤 Stanton Ashburn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:12
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
137 words
A method for manufacturing a semiconductor device having shallow trench isolation, comprising the steps of: providing a substrate; forming a pad oxide/silicon mask on said substrate; patterning said pad oxide/silicon mask; removing portions of said pad oxide/silicon mask and said substrate to form a trench in said substrate, said trench having a bottom and sidewalls; forming a liner oxide on said bottom and said sidewalls of said trench and concurrently oxidizing exposed portions of said silicon mask extending over the corners of said trench; depositing a nitride fill over said pad oxide/silicon mask and said trench; and removing the unoxidized portion of said silicon mask and the oxidized portion of said silicon mask not extending over the corners of said trench while retaining the oxidized portions of said silicon mask extending over said corners of said trench.
Claim 2
Independent Claim
137 words
A method for manufacturing a semiconductor device having shallow trench isolation, comprising the steps of: providing a substrate; forming a pad oxide/silicon mask on said substrate; patterning said pad oxide/silicon mask; removing portions of said pad oxide/silicon mask and said substrate to form a trench in said substrate, said trench having a bottom and sidewalls; forming a liner oxide on said bottom and said sidewalls of said trench and concurrently oxidizing exposed portions of said silicon mask extending over the corners of said trench; depositing a nitride fill over said pad oxide/silicon mask and said trench; and removing the unoxidized portion of said silicon mask and the oxidized portion of said silicon mask not extending over the corners of said trench while retaining the oxidized portions of said silicon mask extending over said corners of said trench.
Claim 3
Dependent Claim
29 words
The method of claim 1, further comprising the step of removing portions of said nitride fill residing over said pad oxide/silicon mask, after said step of depositing a nitride.
Claim 4
Dependent Claim
23 words
The method of claim 2, further comprising the step of depositing a gate oxide, after said step of removing said pad oxide/silicon mask.
Claim 5
Dependent Claim
17 words
The method of claim 1, wherein said step of depositing a nitride fill comprises depositing silicon nitride.
Claim 6
Dependent Claim
17 words
The method of claim 1, wherein said step of depositing a nitride fill comprises depositing boron nitride.
Claim 7
Independent Claim
138 words
A method for manufacturing a semiconductor device having shallow trench isolation, comprising the steps of: providing a substrate; forming a pad oxide/silicon mask on said substrate; patterning said pad oxide/silicon mask; removing portions of said pad oxide/silicon mask and said substrate to form a trench in said substrate, said trench having a bottom and sidewalls; forming a liner oxide on said bottom and said sidewalls of said trench and concurrently oxidizing exposed portions of said silicon mask extending over the corners of said trench; depositing a nitride fill over said pad oxide/silicon mask and said liner oxide; and removing the unoxidized portion of said silicon mask and the oxidized portion of said silicon mask not extending over the corners of said trench while retaining the oxidized portions of said silicon mask extending over said corners of said trench.
Claim 8
Independent Claim
138 words
A method for manufacturing a semiconductor device having shallow trench isolation, comprising the steps of: providing a substrate; forming a pad oxide/silicon mask on said substrate; patterning said pad oxide/silicon mask; removing portions of said pad oxide/silicon mask and said substrate to form a trench in said substrate, said trench having a bottom and sidewalls; forming a liner oxide on said bottom and said sidewalls of said trench and concurrently oxidizing exposed portions of said silicon mask extending over the corners of said trench; depositing a nitride fill over said pad oxide/silicon mask and said liner oxide; and removing the unoxidized portion of said silicon mask and the oxidized portion of said silicon mask not extending over the corners of said trench while retaining the oxidized portions of said silicon mask extending over said corners of said trench.
Claim 9
Dependent Claim
30 words
The method of claim 6, further comprising the step of removing portions of said nitride fill residing over said pad oxide/silicon mask, after said step of depositing a nitride fill.
Claim 10
Dependent Claim
23 words
The method of claim 7, further comprising the step of depositing a gate oxide, after said step of removing said pad oxide/silicon mask.
Claim 11
Dependent Claim
17 words
The method of claim 6, wherein said step of depositing a nitride fill comprises depositing silicon nitride.
Claim 12
Dependent Claim
17 words
The method of claim 6, wherein said step of depositing a nitride fill comprises depositing boron nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |