Patent US6037274A successfully refreshed from Google Patents.
US6037274A
Expired / Lapsed
US
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Method for forming insulating film
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1996-02-07
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Granted: 2000-03-14
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Expires: 2016-02-07
Abstract
Abstract The present invention relates to a method for forming an insulating film with a low relative dielectric constant. A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas, an oxygen supply gas, and a fluorine supply gas are used a material gas to form said insulating film, and said insulating film is formed under a film forming condition that a density of said insulating film to be formed is equal to or more than 2.25 g/cm3.
Inventors
- 👤 Hiroshi Kudo
- 👤 Rika Shinohara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/687; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
106 words
A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas formed of tetraethylorthosilicate, an oxygen supply gas, and a fluorine supply gas formed of C 2 F 6 are used as a material gas to form said insulating film, and said insulating film is formed under a film forming condition by adjusting a ratio of a flow rate of said oxygen supply gas to said fluorine supply gas to be 2.86 to 3.8 so that a density of said insulating film to be formed is equal to or more than 2.25 g/cm 3 .
Claim 2
Independent Claim
106 words
A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas formed of tetraethylorthosilicate, an oxygen supply gas, and a fluorine supply gas formed of C 2 F 6 are used as a material gas to form said insulating film, and said insulating film is formed under a film forming condition by adjusting a ratio of a flow rate of said oxygen supply gas to said fluorine supply gas to be 2.86 to 3.8 so that a density of said insulating film to be formed is equal to or more than 2.25 g/cm 3 .
Claim 3
Independent Claim
108 words
A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas formed of SiH 4 , an oxygen supply gas, and a fluorine supply gas formed of SiH 2 F 2 are used as a material gas to form said insulating film, and said insulating film is formed under a film forming condition by adjusting a ratio of a flow rate of said oxygen supply gas to said fluorine supply gas to be 250 to 333 so that a density of said insulating film to be formed is equal to or more than 2.25 g/cm 3 .
Claim 4
Independent Claim
108 words
A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas formed of SiH 4 , an oxygen supply gas, and a fluorine supply gas formed of SiH 2 F 2 are used as a material gas to form said insulating film, and said insulating film is formed under a film forming condition by adjusting a ratio of a flow rate of said oxygen supply gas to said fluorine supply gas to be 250 to 333 so that a density of said insulating film to be formed is equal to or more than 2.25 g/cm 3 .
Claim 5
Independent Claim
106 words
A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas formed of SiH 4 , an oxygen supply gas, and a fluorine supply gas formed of SiF 4 are used as a material gas to form said insulating film, and said insulating film is formed under a film forming condition by adjusting a ratio of a flow rate of said oxygen supply gas to said fluorine supply gas to be 10.0 to 11.87 so that a density of said insulating film to be formed is equal to or more than 2.25 g/cm 8 .
Claim 6
Independent Claim
106 words
A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas formed of SiH 4 , an oxygen supply gas, and a fluorine supply gas formed of SiF 4 are used as a material gas to form said insulating film, and said insulating film is formed under a film forming condition by adjusting a ratio of a flow rate of said oxygen supply gas to said fluorine supply gas to be 10.0 to 11.87 so that a density of said insulating film to be formed is equal to or more than 2.25 g/cm 8 .
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-03-14 | 2003-09-13 | 2004-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-14 | 2007-09-13 | 2008-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-14 | 2011-09-13 | 2012-03-14 | $7700.00 | Window Closed / Lapsed |