Patent US6035530A successfully refreshed from Google Patents.
US6035530A
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Method of manufacturing interconnect
Assignee: United Microelectronics Corp
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Filing: 1999-05-06
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Granted: 2000-03-14
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Expires: 2019-05-06
Abstract
Abstract A method for manufacturing an interconnect. A substrate having a first dielectric layer and a barrier layer formed thereon is provided. A plurality of conductive wires is formed on the barrier layer. A second dielectric layer is formed on the barrier layer exposed by the conductive wires, wherein the second dielectric layer has a surface level between the top surfaces and the bottom surfaces of the conductive wires. A spacer is formed on each portion of the sidewalls of the conductive wires exposed by the second dielectric layer, wherein there is a gap between two adjacent spacers. The second dielectric layer is removed. A third dielectric layer is formed on the conductive wires, the spacer, the sidewalls of the conductive wires and the portion of the barrier layer exposed by the conductive wires and fills the gap to form an air cavity between the conductive wires under the spacer.
Inventors
- 👤 Gary Hong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/01; H10W20/071; H10W20/072; H10W20/074; H10W20/077; H10W20/45; H10W20/46; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49162; Y10T29/49204; Y10T29/49224
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
184 words
A method of manufacturing an interconnect, comprising the steps of: providing a substrate; forming a first dielectric layer on the substrate; forming a barrier layer on the first dielectric layer; forming a plurality of conductive wires on the barrier layer; forming a second dielectric layer on the barrier layer exposed by the conductive wires, wherein the second dielectric layer has a surface level between top surfaces and bottom surfaces of the conductive wires and a portion of each sidewall of the conductive wires is exposed by the second dielectric layer; forming a spacer on each portion of the sidewalls of the conductive wires exposed by the second dielectric layer, wherein there is a gap between two adjacent spacers; removing the second dielectric layer; and forming a third dielectric layer on the conductive wires, the spacer, the sidewalls of the conductive wires and the portion of the barrier layer exposed by the conductive wires, and filling the gap to form an air cavity between the conductive wires under the spacer, wherein the air cavity is full of air having a dielectric constant of about 1.
Claim 2
Independent Claim
184 words
A method of manufacturing an interconnect, comprising the steps of: providing a substrate; forming a first dielectric layer on the substrate; forming a barrier layer on the first dielectric layer; forming a plurality of conductive wires on the barrier layer; forming a second dielectric layer on the barrier layer exposed by the conductive wires, wherein the second dielectric layer has a surface level between top surfaces and bottom surfaces of the conductive wires and a portion of each sidewall of the conductive wires is exposed by the second dielectric layer; forming a spacer on each portion of the sidewalls of the conductive wires exposed by the second dielectric layer, wherein there is a gap between two adjacent spacers; removing the second dielectric layer; and forming a third dielectric layer on the conductive wires, the spacer, the sidewalls of the conductive wires and the portion of the barrier layer exposed by the conductive wires, and filling the gap to form an air cavity between the conductive wires under the spacer, wherein the air cavity is full of air having a dielectric constant of about 1.
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein a first dielectric layer material includes silicon oxide.
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein a barrier layer material includes silicon nitride.
Claim 5
Dependent Claim
12 words
The method of claim 1, wherein a barrier layer material includes silicon-oxy-nitride.
Claim 6
Dependent Claim
12 words
The method of claim 1, wherein a conductive wire material includes aluminum.
Claim 7
Dependent Claim
14 words
The method of claim 1, wherein a second dielectric layer material includes silicon oxide.
Claim 8
Dependent Claim
21 words
The method of claim 1, wherein the second dielectric layer can be formed from silicon oxide by selective liquid phase deposition.
Claim 9
Dependent Claim
13 words
The method of claim 1, wherein material of the spacer includes silicon nitride.
Claim 10
Dependent Claim
12 words
The method of claim 1, wherein material of the spacer includes silicon-oxy-nitride.
Claim 11
Dependent Claim
15 words
The method of claim 1, wherein material of the third dielectric layer includes silicon oxide.
Claim 12
Independent Claim
186 words
A method of manufacturing an interconnect, comprising the steps of: providing a substrate having a first dielectric layer and a barrier layer formed thereon; forming a plurality of conductive wires on the barrier layer; performing a selective liquid phase deposition to form a second dielectric layer on the barrier layer exposed by the conductive wires, wherein the second dielectric layer has a surface level between the top surfaces and the bottom surfaces of the conductive wires and a portion of sidewalls of the conductive wires is exposed by the second dielectric layer; forming a spacer on each portion of the sidewalls of the conductive wires exposed by the second dielectric layer, wherein there is a gap between two adjacent spacers; removing the second dielectric layer; and forming a third dielectric layer on the conductive wires, the spacer, the sidewalls of the conductive wires and the portion of the barrier layer exposed by the conductive wires and filling the gap to form an air cavity between the conductive wires under the spacer, wherein the air cavity is full of air having a dielectric constant of about 1.
Claim 13
Independent Claim
186 words
A method of manufacturing an interconnect, comprising the steps of: providing a substrate having a first dielectric layer and a barrier layer formed thereon; forming a plurality of conductive wires on the barrier layer; performing a selective liquid phase deposition to form a second dielectric layer on the barrier layer exposed by the conductive wires, wherein the second dielectric layer has a surface level between the top surfaces and the bottom surfaces of the conductive wires and a portion of sidewalls of the conductive wires is exposed by the second dielectric layer; forming a spacer on each portion of the sidewalls of the conductive wires exposed by the second dielectric layer, wherein there is a gap between two adjacent spacers; removing the second dielectric layer; and forming a third dielectric layer on the conductive wires, the spacer, the sidewalls of the conductive wires and the portion of the barrier layer exposed by the conductive wires and filling the gap to form an air cavity between the conductive wires under the spacer, wherein the air cavity is full of air having a dielectric constant of about 1.
Claim 14
Dependent Claim
14 words
The method of claim 11, wherein a first dielectric layer material includes silicon oxide.
Claim 15
Dependent Claim
13 words
The method of claim 11, wherein a barrier layer material includes silicon nitride.
Claim 16
Dependent Claim
12 words
The method of claim 11, wherein a barrier layer material includes silicon-oxy-nitride.
Claim 17
Dependent Claim
12 words
The method of claim 11, wherein a conductive wire material includes aluminum.
Claim 18
Dependent Claim
14 words
The method of claim 11, wherein a second dielectric layer material includes silicon oxide.
Claim 19
Dependent Claim
12 words
The method of claim 11, wherein a spacer material includes silicon nitride.
Claim 20
Dependent Claim
11 words
The method of claim 11, wherein a spacer material includes silicon-oxy-nitride.
Claim 21
Dependent Claim
14 words
The method of claim 11, wherein a third dielectric layer material includes silicon oxide.
References Cited (Backward Citations)
US4313262A
Cited
US5750415A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-14 | 2003-09-13 | 2004-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-14 | 2007-09-13 | 2008-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-14 | 2011-09-13 | 2012-03-14 | $7700.00 | Window Closed / Lapsed |