US6034725A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor image sensor with an insulating barrier layer
Assignee: US Philips Corp
•
Filing: 1996-10-15
•
Granted: 2000-03-07
•
Expires: 2016-10-15
Abstract
Abstract An image sensor comprises switching elements 30 on a substrate 1. An insulating separation layer 9 is disposed over the switching elements so that a photodiode arrangement 20a disposed over the insulating separation layer 9, can overlap the switching elements 30 and occupy a maximum area of the image sensor. A barrier layer 10 is interposed between the insulating separation layer 9 and the photodiode arrangement 20a, which prevents degradation of the photodiode characteristics over time.
Inventors
- 👤 Anthony R. Franklin
- 👤 Carl Glasse
- 👤 Martin J. Powell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:43
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
110 words
An image detector comprising a substrate carrying a plurality of switching elements, an insulating separation layer disposed over the substrate and substantially covering the switching elements, a photosensitive element being associated with each switching element, each photosensitive element comprising first and second electrodes, the first electrode of each photosensitive element being coupled to a first electrode of the associated switching element, the insulating separation layer being capable of contaminating the photosensitive elements, and an insulating barrier layer disposed over the insulating separation layer, the photosensitive elements being disposed over the insulating barrier layer, and the insulating barrier layer serving to prevent the insulating separation layer from contaminating the photosensitive elements.
Claim 2
Dependent Claim
110 words
An image detector comprising a substrate carrying a plurality of switching elements, an insulating separation layer disposed over the substrate and substantially covering the switching elements, a photosensitive element being associated with each switching element, each photosensitive element comprising first and second electrodes, the first electrode of each photosensitive element being coupled to a first electrode of the associated switching element, the insulating separation layer being capable of contaminating the photosensitive elements, and an insulating barrier layer disposed over the insulating separation layer, the photosensitive elements being disposed over the insulating barrier layer, and the insulating barrier layer serving to prevent the insulating separation layer from contaminating the photosensitive elements.
Claim 3
Dependent Claim
24 words
An image detector as claimed in claim 1, wherein the photosensitive elements are arranged in a matrix of rows and columns of photosensitive elements.
Claim 4
Dependent Claim
14 words
An image detector as claimed in claim 1, wherein the switching elements comprise diodes.
Claim 5
Dependent Claim
21 words
The detector of claim 1 wherein the insulating barrier layer comprises silicon nitride, and wherein the insulating separation layer comprises polyimide.
Claim 6
Dependent Claim
12 words
The detector of claim 1 wherein the insulating separation layer comprises polymer.
Claim 7
Dependent Claim
34 words
The detector of claim 1 wherein the insulating separation layer comprises polymer, and wherein the insulating barrier layer has a molecular structure that provides a barrier to the molecules of the insulating separation layer.
Claim 8
Dependent Claim
45 words
An image detector as claimed in claim 1, wherein the first electrode of the photosensitive element is coupled to the first electrode of the associated switching element by means of a conducting member which is disposed within a channel defined in the insulating separation layer.
Claim 9
Dependent Claim
16 words
An image detector as claimed in claim 1, wherein the switching elements comprise thin film transistors.
Claim 10
Dependent Claim
108 words
An image detector as claimed in claim 8, in which each thin film transistor comprises first and second channel electrodes and a gate electrode, wherein the first channel electrode comprising the first electrode of the switching element which is coupled to the first electrode of the respective photosensitive element, the second electrode of each photosensitive element is connected to a common terminal, the second channel electrodes of the switching elements associated with a column of photosensitive elements are connected together to a respective column electrode, and the gate electrodes of the switching elements associated with a row of photosensitive elements are connected together to a respective row electrode.
Claim 11
Dependent Claim
39 words
An image detector as claimed in claim 1, wherein an energy conversion layer is provided for converting electromagnetic radiation with a first range of wavelengths into electromagnetic radiation with a second range of wavelengths detectable by the photosensitive elements.
Claim 12
Dependent Claim
17 words
An image detector as claimed in claim 10, wherein the energy conversion layer comprises a phosphor layer.
Claim 13
Dependent Claim
19 words
An image detector as claimed in claim 1, wherein the insulating barrier layer comprises a layer of silicon nitride.
Claim 14
Dependent Claim
46 words
An image detector as claimed in claim 12, where in the first electrode of the photosensitive element is coupled to the first electrode of the associated switching element by means of a conducting member which is disposed within a channel defined in the insulating separation layer.
Claim 15
Dependent Claim
24 words
An image detector as claimed in claim 12, wherein the photosensitive elements are arranged in a matrix of rows and columns of photosensitive elements.
Claim 16
Dependent Claim
16 words
An image detector as claimed in claim 13, wherein the switching elements comprise thin film transistors.
Claim 17
Dependent Claim
18 words
An image detector as claimed in claim 1, wherein the insulating separation layer comprises a layer of polyimide.
Claim 18
Dependent Claim
45 words
An image detector as claimed in claim 16, wherein the first electrode of the photosensitive element is coupled to the first electrode of the associated switching element by means of a conducting member which is disposed within a channel defined in the insulating separation layer.
Claim 19
Dependent Claim
24 words
An image detector as claimed in claim 16, wherein the photosensitive elements are arranged in a matrix of rows and columns of photosensitive elements.
Claim 20
Dependent Claim
16 words
An image detector as claimed in claim 16, wherein the switching elements comprise thin film transistors.
References Cited (Backward Citations)
US4608749A
Cited
US4740824A
Cited
US5204519A
Cited
JPH04317373A
Cited
JPH04317372A
Cited
US5818053A
Cited
US5233181A
Cited
US5396072A
Cited
US5516712A
Cited
US5619033A
Cited
US5859463A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-07 | 2003-09-06 | 2004-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-07 | 2007-09-06 | 2008-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-07 | 2011-09-06 | 2012-03-07 | $7700.00 | Window Closed / Lapsed |