Patent US6033939A successfully refreshed from Google Patents.
US6033939A
Expired / Lapsed
US
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Method for providing electrically fusible links in copper interconnection
Assignee: Google LLC
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Filing: 1998-04-21
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Granted: 2000-03-07
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Expires: 2018-04-21
Abstract
Abstract A method is provided for the fabrication of fuses within a semiconductor IC structure, which fuses are delectable by a laser pulse or a low voltage electrical pulse typically below 3.5 V to reroute the electrical circuitry of the structure to remove a faulty element. The fuses are formed on the surface of circuitry which is coplanar with a surrounding dielectric such as the circuitry formed by a Damascene method. A preferred fuse material is silicon-chrome-oxygen and the preferred circuitry is copper.
Inventors
- 👤 Birendra N. Agarwala
- 👤 Hormazdyar M. Dalal
- 👤 Du B. Nguyen
- 👤 Hazara S. Rathore
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:26
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10W20/494; H10W72/00; H10W72/20; H10W72/90; H10W72/921; H10W72/922; H10W72/9223; H10W72/923; H10W72/941; H10W72/9415; H10W72/942
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
174 words
A method for forming at least one fuse, delectable by low voltage electrical pulses or by laser pulses for the purpose of rerouting various components on an integrated circuit, the fuse being formed on a planarized surface of exposed interconnection circuitry lines and surrounding internal insulation, the method comprising the steps of: forming a planarized surface comprising the circuitry lines and surrounding internal insulation; depositing a thin layer of a fuse material on the planarized surface; defining the size and shape of the fuses and the circuitry lines connected by the fuses using a photolithographic photoresist material; exposing the photoresist; developing the exposed photoresist; etching the exposed layer of fuse material; stripping the remaining photolithographic photoresist material; depositing at least one layer of final insulating and passivating material on the fuses defined planarized surface; forming, by a damascene method, at least two via studs with each stud contacting the circuitry lines linked by the fuse; and forming metal pads on the upper surface of the final insulating and passivating layer contacting the via studs.
Claim 2
Independent Claim
174 words
A method for forming at least one fuse, delectable by low voltage electrical pulses or by laser pulses for the purpose of rerouting various components on an integrated circuit, the fuse being formed on a planarized surface of exposed interconnection circuitry lines and surrounding internal insulation, the method comprising the steps of: forming a planarized surface comprising the circuitry lines and surrounding internal insulation; depositing a thin layer of a fuse material on the planarized surface; defining the size and shape of the fuses and the circuitry lines connected by the fuses using a photolithographic photoresist material; exposing the photoresist; developing the exposed photoresist; etching the exposed layer of fuse material; stripping the remaining photolithographic photoresist material; depositing at least one layer of final insulating and passivating material on the fuses defined planarized surface; forming, by a damascene method, at least two via studs with each stud contacting the circuitry lines linked by the fuse; and forming metal pads on the upper surface of the final insulating and passivating layer contacting the via studs.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein the fuse material is metallic or organic.
Claim 4
Dependent Claim
32 words
The method of claim 2 wherein the metallic fuse material is selected from the group consisting of silicon-chromium-oxygen, tantalum, tantalum nitride, titanium, titanium-nitride, tungsten, tungsten-silicon, silicon, germanium, silicon carbide and germanium carbide.
Claim 5
Dependent Claim
13 words
The method of claim 2 wherein the organic fuse material is a polyaniline.
Claim 6
Dependent Claim
16 words
The method of claim 1 wherein the interconnection circuitry lines are copper or aluminum based metallurgies.
Claim 7
Dependent Claim
28 words
The method of claim 1 wherein the fuse material is deposited by a method chosen from a group comprising of sputtering, reactive-sputtering, PECVD, spinning, and any combination thereof.
Claim 8
Dependent Claim
20 words
The method of claim 1 wherein the etching is done by reactive ion etching using fluorine based gas or oxygen.
Claim 9
Dependent Claim
30 words
The method of claim 1 wherein the fuse linking the interconnection circuitry lines could be deleted by flowing a required amount of electrical current at voltages below about 3.5 V.
Claim 10
Dependent Claim
19 words
The method of claim 1 wherein the fuse linking the interconnection circuitry lines could be deleted by laser pulses.
Claim 11
Dependent Claim
16 words
The method of claim 1 wherein the via studs are aluminum based or copper based metallurgies.
Claim 12
Dependent Claim
20 words
The method of claim 1 wherein the pads are used for wire bonding, TAB connection, or C4 solder ball formation.
Claim 13
Dependent Claim
15 words
The method of claim 11 wherein the pads are aluminum based or copper based metallurgies.
Claim 14
Dependent Claim
28 words
The method of claim 12 wherein the pads for the copper based metallurgies are chosen from a group comprising of chromium, copper, gold, tantalum, tantalum-nitride, nickel and titanium-tungsten.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-07 | 2003-09-06 | 2004-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-07 | 2007-09-06 | 2008-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-07 | 2011-09-06 | 2012-03-07 | $7700.00 | Window Closed / Lapsed |