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Optical proximity correction mask for semiconductor device fabrication

Assignee: SK Hynix Inc
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Filing: 1998-08-14
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Granted: 2000-03-07
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Expires: 2018-08-14
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Abstract

Abstract A mask for fabricating a semiconductor device, which is capable of correcting an optical proximity effect, includes a transparent mask plate, a main pattern formed on the mask plate as a light blocking layer, and a subsidiary pattern a corner of which is offset in a direction of 45±10 degrees or 135±10 degrees from a line longitudinally extended from the main pattern's edge line. The corner of the subsidiary pattern may be contiguous or non-contiguous with a corner of the main pattern.

Inventors

  • 👤 Jun Seok Lee

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 09:47
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; G03F7/70441; G03F1/00; G03F1/36

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 67 words
A mask for fabricating a semiconductor device, comprising: a mask plate; a main pattern formed on the mask plate; and a subsidiary pattern a corner of which is offset in a direction of 45±10 degrees or 135±10 degrees relative to a line extended from the main pattern's edge line, and which exhibits the same phase and amplitude under an exposure irradiation as that of the main pattern.
Claim 2
Dependent Claim 67 words
A mask for fabricating a semiconductor device, comprising: a mask plate; a main pattern formed on the mask plate; and a subsidiary pattern a corner of which is offset in a direction of 45±10 degrees or 135±10 degrees relative to a line extended from the main pattern's edge line, and which exhibits the same phase and amplitude under an exposure irradiation as that of the main pattern.
Claim 3
Dependent Claim 28 words
The mask of claim 1, wherein a corner of the main pattern which serves as a light blocking layer, is contiguous with a corner of the subsidiary pattern.
Claim 4
Dependent Claim 28 words
The mask of claim 1, wherein a corner of the main pattern which serves as the light blocking layer, is non-contiguous with a corner of the subsidiary pattern.
Claim 5
Dependent Claim 33 words
The mask of claim 3, wherein a distance between respective proximate corners of the main and subsidiary patterns ranges from 0 to SCDmy/2 where SCDmy is the minimum distance between adjacent main patterns.
Claim 6
Dependent Claim 46 words
The mask of claim 4, wherein corners of respective main patterns are closely spaced from one another and a single-subsidiary pattern is formed at an intersection of lines longitudinally extended from each main pattern's edge line in a direction of 45±10 degrees or 135±10 degrees therefrom.
Claim 7
Dependent Claim 28 words
The mask of claim 1, wherein two edges of the subsidiary pattern are located on lines which are horizontally and vertically extended from the main pattern's edge lines.
Claim 8
Dependent Claim 30 words
The mask of claim 1, wherein a phase difference between the main pattern and subsidiary pattern with repect to an exposure irradiation source is approximately 0 degree or 180 degrees.
Claim 9
Dependent Claim 31 words
The mask of claim 1, wherein a maximum width of the subsidiary pattern is not resolved on an exposed semiconductor substrate with respect to the wavelength of an exposure irradiation source.
Claim 10
Dependent Claim 14 words
The mask of claim 1, wherein the subsidiary pattern has a right-angled triangular shape.
Claim 11
Dependent Claim 13 words
The mask of claim 1, wherein the subsidiary pattern has a rectangular shape.
Claim 12
Dependent Claim 16 words
The mask of claim 1, wherein the subsidiary pattern is composed of a plurality of polygons.
Claim 13
Dependent Claim 24 words
The mask of claim 11, wherein parts of the subsidiary patterns may be in contact with each other, but not overlapped with one another.
Claim 14
Dependent Claim 23 words
The mask of claim 1, wherein the mask plate is an optically transparent plate, and the main pattern is a light blocking layer.
Claim 15
Dependent Claim 16 words
The mask of claim 13, wherein the subsidiary pattern is formed of a light blocking layer.
Claim 16
Dependent Claim 38 words
The mask of claim 1, wherein when an angle of a corner of the main pattern is not 90 degrees, and corners of the main patterns are adjacent each other, the subsidiary pattern has a right-angled triangular shape.

References Cited (Backward Citations)

US5458998A Cited
US5725973A Cited
US5553273A Cited
US5705301A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-03-07 2003-09-06 2004-03-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-03-07 2007-09-06 2008-03-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-03-07 2011-09-06 2012-03-07 $7700.00 Window Closed / Lapsed

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