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US6025733A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor memory device

Assignee: Renesas Electronics Corp
•
Filing: 1998-02-03
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Granted: 2000-02-15
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Expires: 2018-02-03
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Abstract

Abstract A semiconductor memory device includes two subcircuits each including a memory circuit, a semiconductor circuit, and a logical circuit. Connection pads are divided into only two parallel rows located along the outer periphery of the semiconductor memory device. Each of the pads may include a probe region against which a probe is pressed for testing the semiconductor memory circuit, and a wire region to which a wire is connected upon packaging.

Inventors

  • 👤 Tuyoshi Saitoh
  • 👤 Akira Kitaguchi
  • 👤 Masaaki Matsuo
  • 👤 Makoto Hatakenaka
  • 👤 Toshio Nakano
  • 👤 Yuko Sudo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 14:29
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/08; G11C29/48; H; H10; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/90; H10W72/921; H10W72/926; H10W72/931; H10W72/932

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 166 words
A semiconductor memory device comprising: a semiconductor substrate; a semiconductor memory circuit including a first memory circuit and a second memory circuit used for replacing said first memory circuit when said first memory circuit fails to function properly; a semiconductor test circuit for testing said semiconductor memory circuit; a semiconductor circuit coupled to said semiconductor memory circuit and to said semiconductor test circuit; and a plurality of pads for contact by probes during testing of said semiconductor memory circuit and for connection to wires connected to lead terminals during packaging of said semiconductor memory device, said semiconductor memory circuit, said semiconductor test circuit, and said semiconductor circuit, said plurality of pads being located on said semiconductor substrate, and said plurality of pads being arranged in at least two rows, each row having a row direction parallel to a first side of an outer periphery of said semiconductor memory device, wherein none of said pads in different rows are aligned along directions perpendicular to the row direction.
Claim 2
Dependent Claim 166 words
A semiconductor memory device comprising: a semiconductor substrate; a semiconductor memory circuit including a first memory circuit and a second memory circuit used for replacing said first memory circuit when said first memory circuit fails to function properly; a semiconductor test circuit for testing said semiconductor memory circuit; a semiconductor circuit coupled to said semiconductor memory circuit and to said semiconductor test circuit; and a plurality of pads for contact by probes during testing of said semiconductor memory circuit and for connection to wires connected to lead terminals during packaging of said semiconductor memory device, said semiconductor memory circuit, said semiconductor test circuit, and said semiconductor circuit, said plurality of pads being located on said semiconductor substrate, and said plurality of pads being arranged in at least two rows, each row having a row direction parallel to a first side of an outer periphery of said semiconductor memory device, wherein none of said pads in different rows are aligned along directions perpendicular to the row direction.
Claim 3
Dependent Claim 35 words
The semiconductor memory device according to claim 1, wherein each of said pads comprises a probe region for contact by a probe during testing and a wire region for connection to a wire during packaging.
Claim 4
Dependent Claim 48 words
The semiconductor memory device according to claim 1, wherein each of said pads comprises a probe pad for contact by a probe during testing and a wire pad for connection to a wire during packaging, said probe pads and said wire pads being electrically connected to each other.

References Cited (Backward Citations)

US5514975A Cited
US5670890A Cited
JPH07221147A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-02-14 2003-08-16 2004-02-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-02-14 2007-08-16 2008-02-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-02-14 2011-08-16 2012-02-15 $7700.00 Window Closed / Lapsed

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