US6025228A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating an oxynitride-capped high dielectric constant interpolysilicon dielectric structure for a low voltage non-volatile memory
Assignee: Monterey Research LLC
•
Filing: 1997-11-25
•
Granted: 2000-02-15
•
Expires: 2017-11-25
Abstract
Abstract A method of fabricating an interpolysilicon dielectric structure in a non-volatile memory includes the steps of forming a high dielectric constant layer 12 on a floating gate 10 and an oxynitride layer 14 on the high dielectric constant layer 12. A control gate 18 may be formed on the oxynitride layer 14 to produce a dual gate structure with a high capacitance and therefore a high coupling ratio.
Inventors
- 👤 Effiong Ibok
- 👤 Yue-Song He
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:29
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/031; H10D64/035
Claims Analysis
Total Claims: 77
Claim 1
Independent Claim
45 words
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (a) providing a first polysilicon layer; (b) providing a high dielectric constant layer on the first polysilicon layer; and (c) forming an oxynitride layer on the high dielectric constant layer.
Claim 2
Independent Claim
45 words
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (a) providing a first polysilicon layer; (b) providing a high dielectric constant layer on the first polysilicon layer; and (c) forming an oxynitride layer on the high dielectric constant layer.
Claim 3
Dependent Claim
27 words
The method of claim 1, wherein the high dielectric constant layer includes carbon, further comprising the step of oxidizing the carbon in the high dielectric constant layer.
Claim 4
Dependent Claim
34 words
The method of claim 1, wherein the high dielectric constant layer includes carbon, further comprising the step of heating the high dielectric constant layer to remove the carbon from the high dielectric constant layer.
Claim 5
Dependent Claim
25 words
The method of claim 3, wherein the step of heating the high dielectric constant layer comprises the step of annealing the high dielectric constant layer.
Claim 6
Dependent Claim
17 words
The method of claim 1, wherein the high dielectric constant layer comprises Ta 2 O 5 .
Claim 7
Dependent Claim
15 words
The method of claim 1, wherein the high dielectric constant layer comprises TiO 2 .
Claim 8
Dependent Claim
27 words
The method of claim 1, wherein the step of forming the oxynitride layer comprises the step of depositing the oxynitride layer on the high dielectric constant layer.
Claim 9
Dependent Claim
29 words
The method of claim 7, wherein the step of depositing the oxynitride layer comprises the step of chemical vapor depositing the oxynitride layer on the high dielectric constant layer.
Claim 10
Dependent Claim
28 words
The method of claim 7, wherein the step of depositing the oxynitride layer comprises the step of plasma depositing the oxynitride layer on the high dielectric constant layer.
Claim 11
Dependent Claim
22 words
The method of claim 7, wherein the step of forming the oxynitride layer further comprises the step of etching the oxynitride layer.
Claim 12
Dependent Claim
30 words
The method of claim 1, wherein the step of providing the high dielectric constant layer comprises the step of depositing the high dielectric constant layer on the first polysilicon layer.
Claim 13
Dependent Claim
26 words
The method of claim 11, wherein the step of providing the high dielectric constant layer further comprises the step of etching the high dielectric constant layer.
Claim 14
Dependent Claim
19 words
The method of claim 1, further comprising the step of forming a second polysilicon layer on the oxynitride layer.
Claim 15
Dependent Claim
27 words
The method of claim 13, wherein the step of forming the second polysilicon layer comprises the step of depositing the second polysilicon layer on the oxynitride layer.
Claim 16
Dependent Claim
24 words
The method of claim 14, wherein the step of forming the second polysilicon layer further comprises the step of etching the second polysilicon layer.
Claim 17
Independent Claim
43 words
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (a) providing a floating gate; (b) providing a high dielectric constant layer on the floating gate; and (c) depositing an oxynitride layer on the high dielectric constant layer.
Claim 18
Independent Claim
43 words
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (a) providing a floating gate; (b) providing a high dielectric constant layer on the floating gate; and (c) depositing an oxynitride layer on the high dielectric constant layer.
Claim 19
Dependent Claim
27 words
The method of claim 16, wherein the high dielectric constant layer includes carbon, further comprising the step of oxidizing the carbon in the high dielectric constant layer.
Claim 20
Dependent Claim
34 words
The method of claim 16, wherein the high dielectric constant layer includes carbon, further comprising the step of heating the high dielectric constant layer to remove the carbon from the high dielectric constant layer.
Claim 21
Dependent Claim
25 words
The method of claim 18, wherein the step of heating the high dielectric constant layer comprises the step of annealing the high dielectric constant layer.
Claim 22
Dependent Claim
17 words
The method of claim 16, wherein the high dielectric constant layer comprises Ta 2 O 5 .
Claim 23
Dependent Claim
15 words
The method of claim 16, wherein the high dielectric constant layer comprises TiO 5 .
Claim 24
Dependent Claim
29 words
The method of claim 16, wherein the step of depositing the oxynitride layer comprises the step of chemical vapor depositing the oxynitride layer on the high dielectric constant layer.
Claim 25
Dependent Claim
28 words
The method of claim 16, wherein the step of depositing the oxynitride layer comprises the step of plasma depositing the oxynitride layer on the high dielectric constant layer.
Claim 26
Dependent Claim
14 words
The method of claim 16, further comprising the step of etching the oxynitride layer.
Claim 27
Dependent Claim
30 words
The method of claim 16, wherein the step of providing the high dielectric constant layer comprises the step of depositing the high dielectric constant layer on the first polysilicon layer.
Claim 28
Dependent Claim
26 words
The method of claim 25, wherein the step of providing the high dielectric constant layer further comprises the step of etching the high dielectric constant layer.
Claim 29
Dependent Claim
18 words
The method of claim 16, further comprising the step of forming a control gate on the oxynitride layer.
Claim 30
Dependent Claim
25 words
The method of claim 27, wherein the step of forming the control gate comprises the step of depositing the control gate on the oxynitride layer.
Claim 31
Dependent Claim
22 words
The method of claim 28, wherein the step of forming the control gate further comprises the step of etching the control gate.
Claim 32
Independent Claim
60 words
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (a) providing a floating gate; (b) depositing a high dielectric constant layer on the floating gate, the high dielectric constant layer including carbon; (c) removing the carbon from the high dielectric constant layer; and (d) forming an oxynitride layer on the high dielectric constant layer.
Claim 33
Independent Claim
60 words
A method of fabricating a dielectric structure in a non-volatile memory, comprising the steps of: (a) providing a floating gate; (b) depositing a high dielectric constant layer on the floating gate, the high dielectric constant layer including carbon; (c) removing the carbon from the high dielectric constant layer; and (d) forming an oxynitride layer on the high dielectric constant layer.
Claim 34
Dependent Claim
25 words
The method of claim 30, wherein the step of removing the carbon comprises the step of oxidizing the carbon in the high dielectric constant layer.
Claim 35
Dependent Claim
22 words
The method of claim 30, wherein the step of removing the carbon comprises the step of heating the high dielectric constant layer.
Claim 36
Dependent Claim
25 words
The method of claim 32, wherein the step of heating the high dielectric constant layer comprises the step of annealing the high dielectric constant layer.
Claim 37
Dependent Claim
17 words
The method of claim 30, wherein the high dielectric constant layer comprises Ta 2 O 5 .
Claim 38
Dependent Claim
15 words
The method of claim 30, wherein the high dielectric constant layer comprises TiO 5 .
Claim 39
Dependent Claim
27 words
The method of claim 30, wherein the step of forming the oxynitride layer comprises the step of depositing the oxynitride layer on the high dielectric constant layer.
Claim 40
Dependent Claim
29 words
The method of claim 36, wherein the step of depositing the oxynitride layer comprises the step of chemical vapor depositing the oxynitride layer on the high dielectric constant layer.
Claim 41
Dependent Claim
28 words
The method of claim 36, wherein the step of depositing the oxynitride layer comprises the step of plasma depositing the oxynitride layer on the high dielectric constant layer.
Claim 42
Dependent Claim
22 words
The method of claim 36, wherein the step of forming the oxynitride layer further comprises the step of etching the oxynitride layer.
Claim 43
Dependent Claim
30 words
The method of claim 30, wherein the step of providing the high dielectric constant layer comprises the step of depositing the high dielectric constant layer on the first polysilicon layer.
Claim 44
Dependent Claim
26 words
The method of claim 40, wherein the step of providing the high dielectric constant layer further comprises the step of etching the high dielectric constant layer.
Claim 45
Dependent Claim
18 words
The method of claim 30, further comprising the step of forming a control gate on the oxynitride layer.
Claim 46
Dependent Claim
25 words
The method of claim 42, wherein the step of forming the control gate comprises the step of depositing the control gate on the oxynitride layer.
Claim 47
Dependent Claim
22 words
The method of claim 43, wherein the step of forming the control gate further comprises the step of etching the control gate.
Claim 48
Independent Claim
67 words
A method of fabricating a dielectric structure in a non-volatile memory that includes a substrate, a tunnel oxide on the substrate and a floating gate on the tunnel oxide, the method comprising the steps of: (a) providing a high dielectric constant layer on the floating gate; (b) forming an oxynitride layer on the high dielectric constant layer; and (c) forming a control gate on the oxynitride layer.
Claim 49
Independent Claim
67 words
A method of fabricating a dielectric structure in a non-volatile memory that includes a substrate, a tunnel oxide on the substrate and a floating gate on the tunnel oxide, the method comprising the steps of: (a) providing a high dielectric constant layer on the floating gate; (b) forming an oxynitride layer on the high dielectric constant layer; and (c) forming a control gate on the oxynitride layer.
Claim 50
Dependent Claim
27 words
The method of claim 45, wherein the high dielectric constant layer includes carbon, further comprising the step of oxidizing the carbon in the high dielectric constant layer.
Claim 51
Dependent Claim
34 words
The method of claim 45, wherein the high dielectric constant layer includes carbon, further comprising the step of heating the high dielectric constant layer to remove the carbon from the high dielectric constant layer.
Claim 52
Dependent Claim
25 words
The method of claim 47, wherein the step of heating the high dielectric constant layer comprises the step of annealing the high dielectric constant layer.
Claim 53
Dependent Claim
17 words
The method of claim 45, wherein the high dielectric constant layer comprises Ta 2 O 5 .
Claim 54
Dependent Claim
15 words
The method of claim 45, wherein the high dielectric constant layer comprises TiO 5 .
Claim 55
Dependent Claim
27 words
The method of claim 45, wherein the step of forming the oxynitride layer comprises the step of depositing the oxynitride layer on the high dielectric constant layer.
Claim 56
Dependent Claim
29 words
The method of claim 51, wherein the step of depositing the oxynitride layer comprises the step of chemical vapor depositing the oxynitride layer on the high dielectric constant layer.
Claim 57
Dependent Claim
28 words
The method of claim 51, wherein the step of depositing the oxynitride layer comprises the step of plasma depositing the oxynitride layer on the high dielectric constant layer.
Claim 58
Dependent Claim
22 words
The method of claim 51, wherein the step of forming the oxynitride layer further comprises the step of etching the oxynitride layer.
Claim 59
Dependent Claim
30 words
The method of claim 45, wherein the step of providing the high dielectric constant layer comprises the step of depositing the high dielectric constant layer on the first polysilicon layer.
Claim 60
Dependent Claim
26 words
The method of claim 55, wherein the step of providing the high dielectric constant layer further comprises the step of etching the high dielectric constant layer.
Claim 61
Dependent Claim
25 words
The method of claim 45, wherein the step of forming the control gate comprises the step of depositing the control gate on the oxynitride layer.
Claim 62
Dependent Claim
22 words
The method of claim 57, wherein the step of forming the control gate further comprises the step of etching the control gate.
Claim 63
Independent Claim
84 words
A method of fabricating a dielectric structure in a non-volatile memory that includes a substrate, a tunnel oxide on the substrate and a floating gate on the tunnel oxide, the method comprising the steps of: (a) depositing a high dielectric constant layer on the floating gate, the high dielectric constant layer including carbon; (b) removing the carbon from the high dielectric constant layer; (c) forming an oxynitride layer on the high dielectric constant layer; and (d) forming a control gate on the oxynitride layer.
Claim 64
Independent Claim
84 words
A method of fabricating a dielectric structure in a non-volatile memory that includes a substrate, a tunnel oxide on the substrate and a floating gate on the tunnel oxide, the method comprising the steps of: (a) depositing a high dielectric constant layer on the floating gate, the high dielectric constant layer including carbon; (b) removing the carbon from the high dielectric constant layer; (c) forming an oxynitride layer on the high dielectric constant layer; and (d) forming a control gate on the oxynitride layer.
Claim 65
Dependent Claim
25 words
The method of claim 59, wherein the step of removing the carbon comprises the step of oxidizing the carbon in the high dielectric constant layer.
Claim 66
Dependent Claim
22 words
The method of claim 59, wherein the step of removing the carbon comprises the step of heating the high dielectric constant layer.
Claim 67
Dependent Claim
25 words
The method of claim 61, wherein the step of heating the high dielectric constant layer comprises the step of annealing the high dielectric constant layer.
Claim 68
Dependent Claim
17 words
The method of claim 59, wherein the high dielectric constant layer comprises Ta 2 O 5 .
Claim 69
Dependent Claim
15 words
The method of claim 59, wherein the high dielectric constant layer comprises TiO 5 .
Claim 70
Dependent Claim
27 words
The method of claim 59, wherein the step of forming the oxynitride layer comprises the step of depositing the oxynitride layer on the high dielectric constant layer.
Claim 71
Dependent Claim
29 words
The method of claim 65, wherein the step of depositing the oxynitride layer comprises the step of chemical vapor depositing the oxynitride layer on the high dielectric constant layer.
Claim 72
Dependent Claim
28 words
The method of claim 65, wherein the step of depositing the oxynitride layer comprises the step of plasma depositing the oxynitride layer on the high dielectric constant layer.
Claim 73
Dependent Claim
22 words
The method of claim 65, wherein the step of forming the oxynitride layer further comprises the step of etching the oxynitride layer.
Claim 74
Dependent Claim
30 words
The method of claim 59, wherein the step of providing the high dielectric constant layer comprises the step of depositing the high dielectric constant layer on the first polysilicon layer.
Claim 75
Dependent Claim
26 words
The method of claim 69, wherein the step of providing the high dielectric constant layer further comprises the step of etching the high dielectric constant layer.
Claim 76
Dependent Claim
25 words
The method of claim 59, wherein the step of forming the control gate comprises the step of depositing the control gate on the oxynitride layer.
Claim 77
Dependent Claim
22 words
The method of claim 71, wherein the step of forming the control gate further comprises the step of etching the control gate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-14 | 2003-08-16 | 2004-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-14 | 2007-08-16 | 2008-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-14 | 2011-08-16 | 2012-02-15 | $7700.00 | Window Closed / Lapsed |