US6023308A
Expired / Lapsed
US
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Active matrix device with two TFT's per pixel driven by a third TFT with a crystalline silicon channel
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-11-26
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Granted: 2000-02-08
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Expires: 2017-11-26
Abstract
Abstract An active matrix device comprising a two signal lines (V D and V G ) formed over a substrate. The first signal line is connected to the gate (G1) of a first thin film transistor (Tr1) with a crystalline silicon channel. The second signal line is connected to the drain (D1) of the first thin film transistor. The source (S1) of the first thin film transistor is connected to the gate (G2) of a second thin film transistor (Tr2) with a crystalline silicon channel. A voltage supply line (V LC ) is connected to a drain (D2) of the second thin film transistor and a pixel electrode is connected to the source (S2) of the second thin film transistor. A driving circuit formed for driving the thin film transistors comprises a third film transistor (Tr3) with a crystalline silicon channel. Preferably, the channel width of the second thin film transistor is greater than the channel width of the first thin film transistor.
Inventors
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:59
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/13624; G09; G09G; G09G3/00; G09G3/20; G09G3/34; G09G3/36; G09G3/3611; G09G3/3648; H; H10; H10D; H10D86/00; H10D86/40; H10D86/441; H10D86/471; H10D86/60; G02F1/136245; G02F1/1368; G09G2300/00; G09G2300/08; G09G2300/0809
Claims Analysis
Total Claims: 49
Claim 1
Independent Claim
206 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 2
Dependent Claim
206 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 3
Dependent Claim
249 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 4
Dependent Claim
249 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 5
Dependent Claim
209 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 6
Dependent Claim
209 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 7
Dependent Claim
251 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 8
Dependent Claim
251 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 9
Dependent Claim
203 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 10
Dependent Claim
203 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 11
Dependent Claim
245 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 12
Dependent Claim
245 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 13
Dependent Claim
222 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 14
Dependent Claim
222 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 15
Dependent Claim
264 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 16
Dependent Claim
264 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 17
Dependent Claim
221 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 18
Dependent Claim
221 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 19
Dependent Claim
266 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 20
Dependent Claim
266 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 21
Dependent Claim
216 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 22
Dependent Claim
216 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 23
Dependent Claim
260 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 24
Dependent Claim
260 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a surface smoothing film formed over said first and second thin film transistors; a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon.
Claim 25
Dependent Claim
229 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 26
Dependent Claim
229 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 27
Dependent Claim
271 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 28
Dependent Claim
271 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 29
Dependent Claim
231 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 30
Dependent Claim
231 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 31
Dependent Claim
273 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 32
Dependent Claim
273 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 33
Dependent Claim
225 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 34
Dependent Claim
225 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 35
Dependent Claim
267 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 36
Dependent Claim
267 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel forming region of said third thin film transistor comprises crystalline silicon, wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 37
Dependent Claim
185 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; and a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 38
Dependent Claim
185 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; and a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 39
Dependent Claim
228 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 40
Dependent Claim
228 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 41
Dependent Claim
187 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 42
Dependent Claim
187 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 43
Dependent Claim
229 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and wherein a channel of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 44
Dependent Claim
229 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and wherein a channel of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 45
Dependent Claim
182 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; and a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 46
Dependent Claim
182 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to a drain of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is connected to a source of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to a drain of said second thin film transistor; and a pixel electrode formed over said substrate wherein said pixel electrode is connected to a source of said second thin film transistor; wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 47
Dependent Claim
224 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 48
Dependent Claim
224 words
An active matrix device comprising a substrate having an insulating surface; a first signal line extending over said substrate; a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line; a second signal line extending across said first signal line wherein said second signal line is connected to one of said first pair of impurity regions of said first thin film transistor; a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is connected to the other one of said first pair of impurity regions of said first thin film transistor; a voltage supply line formed over said substrate wherein said voltage supply line is connected to one of said second pair of impurity regions of said second thin film transistor; a pixel electrode formed over said substrate wherein said pixel electrode is connected to the other one of said second pair of impurity regions of said second thin film transistor; and wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor.
Claim 49
Independent Claim
20 words
The device according to any one of claims 1-24 further comprising a liquid crystal layer adjacent to said pixel electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-02-07 | 2003-08-09 | 2004-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-07 | 2007-08-09 | 2008-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-07 | 2011-08-09 | 2012-02-08 | $7700.00 | Window Closed / Lapsed |