US4602192A
Expired / Lapsed
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Thin film integrated device
Assignee: Panasonic Holdings Corp
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Filing: 1984-03-29
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Granted: 1986-07-22
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Expires: 2004-03-29
Abstract
Abstract In a thin film integrated device wherein thin film elements, such as thin film condensers, thin film field effect type transistors and thin film electroluminescent elements, which include insulating films (3, 7, 13, 15, 16) as one of their constitution elements, are formed on an insulating substrate; the insulating films are made of sputtered composite oxide films with at least tantalum and aluminum as major constituents. Since this sputtered composite oxide film has characteristics with a large dielectric constant and a breakdown field intensity and a small leakage current, if it is applied in the thin film elements, their operation characteristics can be increased and their reliability can be remarkably improved.
Inventors
- 👤 Koji Nomura
- 👤 Hisahito Ogawa
- 👤 Atsushi Abe
- 👤 Tsuneharu Nitta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:46
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H01; H01B; H01B3/00; H01B3/02; H01B3/12; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10; H05; H05B; H05B33/00; H05B33/12; H05B33/22; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/675; H10D86/00; H10D86/80; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69393
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
41 words
A thin film integrated device wherein at least one thin film element is supported on an insulating substrate, characterized in that said thin film element includes a sputtered composite oxide thin film comprising major constituents of at least tantalum and aluminum.
Claim 2
Dependent Claim
41 words
A thin film integrated device wherein at least one thin film element is supported on an insulating substrate, characterized in that said thin film element includes a sputtered composite oxide thin film comprising major constituents of at least tantalum and aluminum.
Claim 3
Dependent Claim
41 words
A thin film integrated device according to claim 1, characterized in that x/(x+y) is from 0.2 to 0.7 where x is the number of tantalum atoms and y is the number of aluminum atoms in the sputtered composite oxide thin film.
Claim 4
Dependent Claim
36 words
A thin film integrated device according to claim 1, characterized in that said thin film element is at least one of a thin film condenser, a thin film transistor and a thin film light emitting element.
Claim 5
Dependent Claim
55 words
A thin film integrated device according to claim 1, characterized in that said thin film element is a thin film condenser where a first electrode layer, a dielectric thin film and a second electrode layer are overlaid on an insulating substrate and in that said dielectric thin film is a sputtered composite oxide thin film.
Claim 6
Dependent Claim
58 words
A thin film integrated device according to claim 1, characterized in that said thin film element is a thin film field effect type transistor constituted with at least a drain electrode, a gate electrode, a source electrode, a semiconductor layer and a gate insulation film and that said gate insulation film is a sputtered composite oxide thin film.
Claim 7
Dependent Claim
21 words
A thin film integrated device according to claim 5, characterized in that said semiconductor layer is constituted with cadmium selenide (CdSe).
Claim 8
Dependent Claim
62 words
A thin film integrated device wherein a thin film field effect type transistor having at least a drain electrode, a gate electrode, a source electrode, a semiconductor layer and a gate insulation film is supported on an insulating substrate, characterized in that said gate insulating film is a sputtered composite oxide thin film of at least tantalum and aluminum as major constituents.
Claim 9
Dependent Claim
62 words
A thin film integrated device wherein a thin film field effect type transistor having at least a drain electrode, a gate electrode, a source electrode, a semiconductor layer and a gate insulation film is supported on an insulating substrate, characterized in that said gate insulating film is a sputtered composite oxide thin film of at least tantalum and aluminum as major constituents.
Claim 10
Dependent Claim
21 words
A thin film integrated device according to claim 7, characterized in that said semiconductor layer is constituted with cadmium selenide (CdSe).
Claim 11
Dependent Claim
41 words
A thin film integrated device according to claim 7, characterized in that x/(x+y) is from 0.2 to 0.7 where the number of tantalum atoms is x and the number of aluminum atoms is y in the sputtered composite oxide thin film.
Claim 12
Dependent Claim
91 words
A thin film integrated device comprising a thin film light emitting element supported on an insulating substrate and having at least a pair of electrode layers, a phosphor thin film provided between these electrode layers and emitting light in response to a voltage applied between said electrode layers, and an insulation layer interposed between at least one of said electrode layers and said phosphor thin film, said device being characterized in that said insulation film is a sputtered composite oxide thin film of at least tantalum and aluminum as major constituents.
Claim 13
Dependent Claim
91 words
A thin film integrated device comprising a thin film light emitting element supported on an insulating substrate and having at least a pair of electrode layers, a phosphor thin film provided between these electrode layers and emitting light in response to a voltage applied between said electrode layers, and an insulation layer interposed between at least one of said electrode layers and said phosphor thin film, said device being characterized in that said insulation film is a sputtered composite oxide thin film of at least tantalum and aluminum as major constituents.
Claim 14
Dependent Claim
41 words
A thin film integrated device according to claim 10, characterized in that x/(x+y) is from 0.2 to 0.7 where the number of tantalum atoms is x and the number of aluminum atoms is y in the sputtered composite oxide thin film.
Claim 15
Dependent Claim
32 words
A thin film integrated device according to claim 10, characterized in that said phosphor thin film is a light emission layer with zinc sulfide as a major constituent containing a luminescent activator.
Claim 16
Dependent Claim
40 words
A thin film integrated device according to claim 12, characterized in that said luminescent activator is of at least a kind selected from a group of Mn, Cu, Ag, Al, Tb, Dy, Er, Pr, Sm, Ho, Tm and their halides.
Claim 17
Dependent Claim
255 words
A thin film integrated device according to claim 10 and comprising a thin film condenser, first and second thin film field effect type transistors supported and disposed together with said thin film light emitting element in a matrix form on said insulating substrate, said thin film condenser having a dielectric thin film and electrodes contact with the both surfaces of said dielectric thin film; said field effect type transistors having a cadmium selenide thin film, drain and source electrodes contact with said cadmium selenide thin film, and a gate electrode disposed with interposition of a gate insulation film on part of said cadmium selenide thin film between said drain and source electrodes; said thin film light emitting element being connected between the drain and source electrodes of said first thin film field effect type transistor; said thin film condenser being connected between the source and gate electrodes thereof; further the source electrode of said second thin film field effect type transistor being connected to the gate electrode of said first thin film electric effect transistor; whereby said device defines a thin film electroluminescence element to form a visible information pattern by selectively applying a signal voltage between the gate and drain electrodes of said second thin film field effect type transistor and is characterized in that the dielectric thin film of said thin film condenser and the gate insulation film of said thin film field effect type transistors are made of sputtered composite oxide thin films of at least tantalum and aluminum as major constituents.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-07-21 | 1990-01-20 | 1990-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-21 | 1994-01-20 | 1994-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-21 | 1998-01-20 | 1998-07-22 | $7700.00 | Window Closed / Lapsed |