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US6023177A
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Semiconductor memory device for providing burst mode control signal, device comprising plural serial transition registers
Assignee: Samsung Electronics Co Ltd
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Filing: 1997-12-11
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Granted: 2000-02-08
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Expires: 2017-12-11
Abstract
Abstract A semiconductor memory device for providing a burst mode control signal. The semiconductor memory device includes a first logic circuit for generating a driving signal in response to a first logic level of an externally input write and read control signal and an externally input chip enable signal, a plurality of transition registers for respectively changing the driving signal in synchronization with a first edge of a clock signal to generate changed driving signals, and a second logic circuit for generating the burst mode control signal generated by the logic combination of the changed driving signals in response to a read latency control signal.
Inventors
- 👤 Eun-cheol Kim
- 👤 Chul-Min Jung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:38
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/10; G11C7/1072; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C7/1015; G11C7/1018; G11C7/1045; G11C7/1078
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
206 words
A semiconductor memory device for providing a burst mode control signal, the semiconductor device comprising: a first logic circuit for generating a driving signal in response to a first logic level of an externally input write and read control signal and an externally input chip enable signal; a plurality of transition registers for respectively changing said driving signal in synchronization with a first edge of a clock signal to generate changed driving signals; and a second logic circuit for generating said burst mode control signal generated by a logical combination of said changed driving signals in response to an externally input read latency control signal, where the second logic circuit activates the burst mode control signal in a first cycle of the clock signal responsive to a first logic level of the read latency control signal and activates the burst mode control signal in a second cycle of the clock signal responsive to a second logic level of the read latency control signal; and a third logic circuit for providing a reset signal which initializes said plurality of transition registers when said write and read control signal is changed to the first logic level and said chip enable signal is changed to a second logic level.
Claim 2
Dependent Claim
206 words
A semiconductor memory device for providing a burst mode control signal, the semiconductor device comprising: a first logic circuit for generating a driving signal in response to a first logic level of an externally input write and read control signal and an externally input chip enable signal; a plurality of transition registers for respectively changing said driving signal in synchronization with a first edge of a clock signal to generate changed driving signals; and a second logic circuit for generating said burst mode control signal generated by a logical combination of said changed driving signals in response to an externally input read latency control signal, where the second logic circuit activates the burst mode control signal in a first cycle of the clock signal responsive to a first logic level of the read latency control signal and activates the burst mode control signal in a second cycle of the clock signal responsive to a second logic level of the read latency control signal; and a third logic circuit for providing a reset signal which initializes said plurality of transition registers when said write and read control signal is changed to the first logic level and said chip enable signal is changed to a second logic level.
Claim 3
Dependent Claim
49 words
A semiconductor memory device as claimed in claim 1, wherein said third logic circuit includes: an inverter for inverting said chip enable signal; and an AND gate for receiving said write and read control signal and an output signal of said invertor and, responsive thereto, generating said reset signal.
Claim 4
Dependent Claim
29 words
A semiconductor memory device as claimed in claim 1, wherein said first logic level is a logic HIGH level and said second logic level is a logic LOW level.
Claim 5
Dependent Claim
188 words
A semiconductor memory device for providing a burst mode control signal, the semiconductor device comprising: a first logic circuit for generating a driving signal in response to a first logic level of an externally input write and read control signal and an externally input chip enable signal; a plurality of transition registers for respectively changing said driving signal in synchronization with a first edge of a clock signal to generate changed driving signals; and a second logic circuit for generating said burst mode control signal generated by a logical combination of said changed driving signals in response to an externally input read latency control signal, wherein said second logic circuit includes: a multiplexer for selecting one of said driving signal and an output signal of a last one of said plurality of transition registers in response to said read latency control signal; and a fourth logic circuit for generating said burst mode control signal by a logical combination of an output signal of said multiplexer and output signals of said plurality of transition registers except said output signal of said last one of said plurality of transition registers.
Claim 6
Dependent Claim
188 words
A semiconductor memory device for providing a burst mode control signal, the semiconductor device comprising: a first logic circuit for generating a driving signal in response to a first logic level of an externally input write and read control signal and an externally input chip enable signal; a plurality of transition registers for respectively changing said driving signal in synchronization with a first edge of a clock signal to generate changed driving signals; and a second logic circuit for generating said burst mode control signal generated by a logical combination of said changed driving signals in response to an externally input read latency control signal, wherein said second logic circuit includes: a multiplexer for selecting one of said driving signal and an output signal of a last one of said plurality of transition registers in response to said read latency control signal; and a fourth logic circuit for generating said burst mode control signal by a logical combination of an output signal of said multiplexer and output signals of said plurality of transition registers except said output signal of said last one of said plurality of transition registers.
Claim 7
Dependent Claim
18 words
A semiconductor memory device as claimed in claim 4, wherein said fourth logic circuit is an OR gate.
Claim 8
Dependent Claim
187 words
A semiconductor memory device for providing a burst mode control signal, the semiconductor memory device comprising: a first logic gate for generating a driving signal in response to a first logic level of a write and read control signal and an externally input chip enable signal; a plurality of transition registers for respectively changing said driving signal in synchronization with a rising edge of a clock signal; a multiplexer for selecting one of said driving signal and an output signal of a last one of said plurality of transition registers in response to an externally input read latency control signal; a second logic gate for generating said burst mode control signal by a logical combination of an output signal of said multiplexer and output signals of said plurality of transition registers except said output signal of said last one of said plurality of transition registers; and a logic circuit for providing a reset signal which initializes said plurality of transition registers when said write and read control signal is changed to the first logic level and said chip enable signal is changed to a second logic level.
Claim 9
Dependent Claim
187 words
A semiconductor memory device for providing a burst mode control signal, the semiconductor memory device comprising: a first logic gate for generating a driving signal in response to a first logic level of a write and read control signal and an externally input chip enable signal; a plurality of transition registers for respectively changing said driving signal in synchronization with a rising edge of a clock signal; a multiplexer for selecting one of said driving signal and an output signal of a last one of said plurality of transition registers in response to an externally input read latency control signal; a second logic gate for generating said burst mode control signal by a logical combination of an output signal of said multiplexer and output signals of said plurality of transition registers except said output signal of said last one of said plurality of transition registers; and a logic circuit for providing a reset signal which initializes said plurality of transition registers when said write and read control signal is changed to the first logic level and said chip enable signal is changed to a second logic level.
Claim 10
Dependent Claim
18 words
A semiconductor memory device as claimed in claim 6, wherein said first logic gate is an AND gate.
Claim 11
Dependent Claim
18 words
A semiconductor memory device as claimed in claim 6, wherein said second logic gate is an OR gate.
Claim 12
Dependent Claim
46 words
A semiconductor memory device as claimed in claim 6, wherein said logic circuit includes: an inverter for inverting said chip enable signal; and an AND gate for receiving said write and read control signal and an output signal of said invertor and generating said reset signal.
Claim 13
Dependent Claim
28 words
A semiconductor memory device as claimed in claim 6, wherein said first logic level is a logic HIGH level and said second level is a logic LOW level.
Claim 14
Dependent Claim
129 words
A semiconductor memory device for providing a burst mode control signal, comprising: a driving signal generator for combining externally input memory control signals, thereby generating a driving signal; a shift register for shifting the drive signal in response to a clock signal in order to generate a sequence of shifted drive signals corresponding to the drive signal; and a gate for selecting one of said driving signal and a last one of said sequence of shifted drive signals according to a read latency control signal and for combining one of said driving signal and the last one of said sequence of shifted drive signals, responsive to said read latency control signal, with remaining ones of said sequence of shifted drive signals thereby generating a desired burst mode control signal.
Claim 15
Dependent Claim
129 words
A semiconductor memory device for providing a burst mode control signal, comprising: a driving signal generator for combining externally input memory control signals, thereby generating a driving signal; a shift register for shifting the drive signal in response to a clock signal in order to generate a sequence of shifted drive signals corresponding to the drive signal; and a gate for selecting one of said driving signal and a last one of said sequence of shifted drive signals according to a read latency control signal and for combining one of said driving signal and the last one of said sequence of shifted drive signals, responsive to said read latency control signal, with remaining ones of said sequence of shifted drive signals thereby generating a desired burst mode control signal.
Claim 16
Dependent Claim
40 words
A semiconductor memory device as claimed in claim 11, wherein a time interval of said burst mode control signal relative to the externally input memory control signals is controlled according to a logic level of said read latency control signal.
Claim 17
Independent Claim
136 words
A method for internally generating a burst mode control signal in a memory device, the method comprising: providing a plurality of transition registers coupled in series; logical ANDing an externally input read/write control signal and an externally input chip enable signal to generate a first logic signal; inputting the first logic signal to a first one of the plurality of transition registers; selecting one of the first logic signal and an output signal of a last one of the plurality of transition registers responsive to an externally input read latency signal in order to generate a second logic signal; logical ORing the second logic signal and an output signal of each of the plurality of transition registers except the last one of the plurality of transition registers in order to generate the burst mode control signal.
Claim 18
Independent Claim
136 words
A method for internally generating a burst mode control signal in a memory device, the method comprising: providing a plurality of transition registers coupled in series; logical ANDing an externally input read/write control signal and an externally input chip enable signal to generate a first logic signal; inputting the first logic signal to a first one of the plurality of transition registers; selecting one of the first logic signal and an output signal of a last one of the plurality of transition registers responsive to an externally input read latency signal in order to generate a second logic signal; logical ORing the second logic signal and an output signal of each of the plurality of transition registers except the last one of the plurality of transition registers in order to generate the burst mode control signal.
Claim 19
Dependent Claim
32 words
The method of claim 13, further including: resetting the plurality of transition registers responsive to an active state of the read/write control signal and an inactive state of the chip enable signal.
Claim 20
Dependent Claim
29 words
The method of claim 13, further including: controlling the duration of the burst mode control signal by varying a number of transition registers of the plurality of transition registers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-07 | 2003-08-09 | 2004-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-07 | 2007-08-09 | 2008-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-07 | 2011-08-09 | 2012-02-08 | $7700.00 | Window Closed / Lapsed |