Patent US6016187A successfully refreshed from Google Patents.
US6016187A
Expired / Lapsed
US
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Exposure apparatus and method
Assignee: Hitachi Ltd
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Filing: 1998-01-06
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Granted: 2000-01-18
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Expires: 2018-01-06
Abstract
Abstract An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.
Inventors
- 👤 Minori Noguchi
- 👤 Yukio Kenbo
- 👤 Yoshitada Oshida
- 👤 Masataka Shiba
- 👤 Yasuhiro Yoshitaka
- 👤 Makoto Murayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:40
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70491; G03F7/705; G03F7/20; G03F7/2002; G03F7/70058; G03F7/70091; G03F7/701; G03F7/70125; G03F7/70216; G03F7/70308; G03F7/70591; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
126 words
An exposure method comprising the steps of illuminating a pattern on a mask with exposure light and exposing the pattern onto a substrate utilizing a projection system, wherein the step of illuminating the pattern on the mask with the exposure light includes passing the exposure light through a first filter means and a secondary light source producing means so as to illuminate the pattern on the mask, and the step of exposing the pattern onto the substrate includes passing the exposure light after illuminating the pattern on the mask and passing through the mask through a second filter means which is provided at a pupil position of a projection lens of projection optics of the projection system so as to expose the pattern onto the substrate.
Claim 2
Dependent Claim
126 words
An exposure method comprising the steps of illuminating a pattern on a mask with exposure light and exposing the pattern onto a substrate utilizing a projection system, wherein the step of illuminating the pattern on the mask with the exposure light includes passing the exposure light through a first filter means and a secondary light source producing means so as to illuminate the pattern on the mask, and the step of exposing the pattern onto the substrate includes passing the exposure light after illuminating the pattern on the mask and passing through the mask through a second filter means which is provided at a pupil position of a projection lens of projection optics of the projection system so as to expose the pattern onto the substrate.
Claim 3
Dependent Claim
13 words
An exposure method according to claim 1, wherein the substrate is a wafer.
Claim 4
Dependent Claim
37 words
A method according to claim 1, wherein the second filter shields at least a part of O-order diffraction light so as to substantially prevent passage of the at least a part of the O-order diffraction light therethrough.
Claim 5
Dependent Claim
27 words
A method according to claim 1, wherein the patterned mask includes a phase shifter so as to shift a phase of illuminating light passing through the mask.
Claim 6
Dependent Claim
16 words
An exposure method according to claim 1, wherein said exposure light is an excimer laser beam.
Claim 7
Dependent Claim
37 words
An exposure method according to claim 5, wherein the first filter means and the secondary light source producing means include an integrator and the second filter means at least forms a part of an imaging lens means.
Claim 8
Dependent Claim
123 words
An exposure method comprising the steps of illuminating a pattern on a mask having a phase shifter with exposure light and exposing the pattern onto a wafer, wherein the step of illuminating the pattern on the mask with the exposure light includes passing the exposure light through a filter means and a secondary light source producing means so as to illuminate the pattern on the mask having the phase shifter so as to shift a phase of the illuminating light passing through the phase shifter of the mask, and the step of exposing the pattern on the substrate includes passing the exposure light after illuminating the pattern on the mask having the phase shifter so as to expose the pattern onto the wafer.
Claim 9
Dependent Claim
123 words
An exposure method comprising the steps of illuminating a pattern on a mask having a phase shifter with exposure light and exposing the pattern onto a wafer, wherein the step of illuminating the pattern on the mask with the exposure light includes passing the exposure light through a filter means and a secondary light source producing means so as to illuminate the pattern on the mask having the phase shifter so as to shift a phase of the illuminating light passing through the phase shifter of the mask, and the step of exposing the pattern on the substrate includes passing the exposure light after illuminating the pattern on the mask having the phase shifter so as to expose the pattern onto the wafer.
Claim 10
Dependent Claim
16 words
An exposure method according to claim 7, wherein said exposure light is an excimer laser beam.
Claim 11
Dependent Claim
124 words
A production method of a semiconductor device, comprising the steps of illuminating a pattern on a mask with exposure light and exposing the pattern onto a semiconductor device, wherein the step of illuminating the pattern on the mask with the exposure light includes passing the exposure light through a first filter means and a secondary light source producing means so as to illuminate the pattern on the mask, and the step of exposing the pattern onto the semiconductor device includes passing the exposure light after illuminating the pattern on the mask through a second filter means which is provided at a pupil position of a projection lens of projection optics of the projection system so as to expose the pattern onto the semiconductor device.
Claim 12
Dependent Claim
124 words
A production method of a semiconductor device, comprising the steps of illuminating a pattern on a mask with exposure light and exposing the pattern onto a semiconductor device, wherein the step of illuminating the pattern on the mask with the exposure light includes passing the exposure light through a first filter means and a secondary light source producing means so as to illuminate the pattern on the mask, and the step of exposing the pattern onto the semiconductor device includes passing the exposure light after illuminating the pattern on the mask through a second filter means which is provided at a pupil position of a projection lens of projection optics of the projection system so as to expose the pattern onto the semiconductor device.
Claim 13
Dependent Claim
15 words
A production method according to claim 9, wherein the exposure light is primarily excimer light.
Claim 14
Dependent Claim
34 words
A production method according to claim 9, further comprising the step of selecting the first filter provided in the secondary light source in accordance with a spatial frequency of the pattern of the mask.
Claim 15
Dependent Claim
29 words
A production method according to claim 9, wherein the patterned mask includes a phase shifter so as to shift a phase of the illuminating light passing through the mask.
Claim 16
Dependent Claim
16 words
An exposure method according to claim 9, wherein said exposure light is an excimer laser beam.
Claim 17
Dependent Claim
127 words
A production method of a semiconductor device, comprising the steps of illuminating a pattern on a mask having a phase shifter with exposure light and exposing the pattern onto a semiconductor device, wherein the step of illuminating the pattern on the mask with the exposure light includes passing the exposure light through a filter means and a secondary light source producing means so as to illuminate the pattern on the mask having the phase shifter so as to shift a phase of the illuminating light passing through the patterned mask, and the step of exposing the pattern onto the semiconductor device includes passing the exposure light after illuminating the pattern on the mask having the phase shifter so as to expose the pattern onto the semiconductor device.
Claim 18
Dependent Claim
127 words
A production method of a semiconductor device, comprising the steps of illuminating a pattern on a mask having a phase shifter with exposure light and exposing the pattern onto a semiconductor device, wherein the step of illuminating the pattern on the mask with the exposure light includes passing the exposure light through a filter means and a secondary light source producing means so as to illuminate the pattern on the mask having the phase shifter so as to shift a phase of the illuminating light passing through the patterned mask, and the step of exposing the pattern onto the semiconductor device includes passing the exposure light after illuminating the pattern on the mask having the phase shifter so as to expose the pattern onto the semiconductor device.
Claim 19
Dependent Claim
19 words
A production method according to claim 14, wherein the exposed pattern has a line width less than 0.3 μm.
Claim 20
Dependent Claim
16 words
An exposure method according to claim 14, wherein said exposure light is an excimer laser beam.
Claim 21
Dependent Claim
83 words
A production method of a semiconductor device, comprising the steps of illuminating a first circuit pattern on a mask having a phase shifter through a projection lens of a first projection exposure system so as to expose the first circuit pattern onto a wafer, and illuminating a second circuit pattern on a mask with the exposure light through a filter means and a secondary light source producing means of a second projection exposure system for exposing the second circuit pattern onto the wafer.
Claim 22
Dependent Claim
83 words
A production method of a semiconductor device, comprising the steps of illuminating a first circuit pattern on a mask having a phase shifter through a projection lens of a first projection exposure system so as to expose the first circuit pattern onto a wafer, and illuminating a second circuit pattern on a mask with the exposure light through a filter means and a secondary light source producing means of a second projection exposure system for exposing the second circuit pattern onto the wafer.
References Cited (Backward Citations)
US3947112A
Cited
FR2518809A1
Cited
JPS6191662A
Cited
US4666294A
Cited
US4744660A
Cited
US4788600A
Cited
US5048967A
Cited
US4905041A
Cited
US4947413A
Cited
EP0352975A2
Cited
US5121160A
Cited
US5062705A
Cited
WO1992003842A1
Cited
US5305054A
Cited
US5767949A
Cited
JPH0682598A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-17 | 2003-07-19 | 2004-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-17 | 2007-07-19 | 2008-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-17 | 2011-07-19 | 2012-01-18 | $7700.00 | Window Closed / Lapsed |