US6015747A
Expired / Lapsed
US
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Method of metal/polysilicon gate formation in a field effect transistor
Assignee: Advanced Micro Devices Inc
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Filing: 1998-12-07
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Granted: 2000-01-18
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Expires: 2018-12-07
Abstract
Abstract A method for manufacturing a field effect transistor (100) includes forming source and drain regions (110, 112) in a semiconductor substrate (102) and forming a polysilicon gate (104) on a surface (106) of the semiconductor substrate adjacent to the source and drain regions. A masking layer (136) is formed, covering substantially all the semiconductor substrate. Portions of the masking layer are then selectively removed to expose at least selected portions of the polysilicon gate. Selected portions of the polysilicon gate are partially etched. By selective electroless metal deposition, a metal layer (146) is formed on the etched selected portions of the polysilicon gate. In an alternative embodiment, the masking layer is removed before selective deposition of the electroless metal, so that electroless metal is simultaneously deposited on the polysilicon gate and the source region and the drain region.
Inventors
- 👤 Sergey Lopatin
- 👤 Takeshi Nogami
- 👤 Shekhar Pramanik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:12
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/0212; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10D64/017
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
139 words
A method for manufacturing a field effect transistor, the method comprising the steps of: forming source and drain regions in a semiconductor substrate; depositing polysilicon on a surface of the semiconductor substrate between the source and drain regions; forming first and second oxide spacers adjacent the polysilicon on the surface of the semiconductor substrate; forming a masking layer covering substantially all the semiconductor substrate; selectively removing portions of the masking layer to expose at least selected portions of the polysilicon; removing a part of the selected portions of the polysilicon to an etch depth to define a trench between the first and second oxide spacers, the trench exposing a deposition surface of the polysilicon for forming the metallpolysilicon layer; and selectively depositing electroless metal to form a metal/polysilicon gate in the trench at the selected portions of the polysilicon.
Claim 2
Independent Claim
139 words
A method for manufacturing a field effect transistor, the method comprising the steps of: forming source and drain regions in a semiconductor substrate; depositing polysilicon on a surface of the semiconductor substrate between the source and drain regions; forming first and second oxide spacers adjacent the polysilicon on the surface of the semiconductor substrate; forming a masking layer covering substantially all the semiconductor substrate; selectively removing portions of the masking layer to expose at least selected portions of the polysilicon; removing a part of the selected portions of the polysilicon to an etch depth to define a trench between the first and second oxide spacers, the trench exposing a deposition surface of the polysilicon for forming the metallpolysilicon layer; and selectively depositing electroless metal to form a metal/polysilicon gate in the trench at the selected portions of the polysilicon.
Claim 3
Dependent Claim
33 words
A method for manufacturing a field effect transistor as recited in claim 1 wherein selectively removing portions of the masking layer comprises removing only a portion of the masking layer over the polysilicon.
Claim 4
Dependent Claim
55 words
A method for manufacturing a field effect transistor as recited in claim 2 wherein selectively removing portions of the masking layer filler comprises removing portions of the masking layer covering the source and drain regions and wherein the method further comprises the step of selective deposition of electroless metal on the source and drain regions.
Claim 5
Dependent Claim
39 words
A method for manufacturing a field effect transistor as recited in claim 1 wherein the electroless metal comprises a metal selected from the group consisting of nickel, cobalt, nickel phosphide, cobalt phosphide, nickel tungsten phosphide and copper tungsten phosphide.
Claim 6
Dependent Claim
59 words
A method for manufacturing a field effect transistor as recited in claim 1 wherein the method further comprises the step of: after exposing the deposition surface of the polysilicon, exposing source/drain deposition surfaces of the source and drain regions; and selectively depositing electroless metal on the source and drain regions as well as the selected portions of the polysilicon.
Claim 7
Dependent Claim
39 words
A method for manufacturing a field effect transistor as recited in claim 5 wherein the electroless metal comprises a metal selected from the group consisting of nickel, cobalt, nickel phosphide, cobalt phosphide, nickel tungsten phosphide and cobalt tungsten phosphide.
Claim 8
Independent Claim
194 words
A method for manufacturing a field effect transistor, the method comprising the steps of: forming a polysilicon gate on a surface of a semiconductor substrate, the polysilicon gate having a predetermined thickness; forming a source region in the semiconductor substrate on a first side of the polysilicon gate and forming a drain region in the semiconductor substrate on a second side of the polysilicon gate; forming a first spacer immediately adjacent the first side of the polysilicon gate and a second spacer immediately adjacent the second side of the polysilicon gate, the first spacer and the second spacer extending from the surface of the semiconductor substrate to substantially a top surface of the polysilicon gate; exposing a deposition surface, including removing a part of the polysilicon gate between the first spacer and the second spacer from the top surface of the polysilicon gate to an etch depth, the etch depth being less than the predetermined thickness of the polysilicon gate, the first spacer, the second spacer and the deposition surface of the polysilicon gate defining a trench; and filling the trench by selectively depositing electroless metal in the trench to form a metal/polysilicon gate.
Claim 9
Independent Claim
194 words
A method for manufacturing a field effect transistor, the method comprising the steps of: forming a polysilicon gate on a surface of a semiconductor substrate, the polysilicon gate having a predetermined thickness; forming a source region in the semiconductor substrate on a first side of the polysilicon gate and forming a drain region in the semiconductor substrate on a second side of the polysilicon gate; forming a first spacer immediately adjacent the first side of the polysilicon gate and a second spacer immediately adjacent the second side of the polysilicon gate, the first spacer and the second spacer extending from the surface of the semiconductor substrate to substantially a top surface of the polysilicon gate; exposing a deposition surface, including removing a part of the polysilicon gate between the first spacer and the second spacer from the top surface of the polysilicon gate to an etch depth, the etch depth being less than the predetermined thickness of the polysilicon gate, the first spacer, the second spacer and the deposition surface of the polysilicon gate defining a trench; and filling the trench by selectively depositing electroless metal in the trench to form a metal/polysilicon gate.
Claim 10
Dependent Claim
31 words
The method as defined in claim 7 further comprising the steps of forming a masking layer on the surface of the semiconductor substrate except the top surface of the polysilicon gate.
Claim 11
Dependent Claim
22 words
The method as defined in claim 8 further comprising the step of, after selectively depositing the electroless metal, removing the masking layer.
Claim 12
Dependent Claim
48 words
The method as defined in claim 8 further comprising the steps of: before selectively depositing the electroless metal, removing the masking layer and exposing the source region and the drain region; and selectively depositing electroless metal on the source region and the drain region to form ohmic contacts.
Claim 13
Dependent Claim
34 words
The method as defined in claim 8 further comprising the step of selecting the electroless metal from the group consisting of nickel, cobalt, nickel phosphide, nickel tungsten phosphide, cobalt phosphide, and cobalt tungsten phosphide.
Claim 14
Dependent Claim
26 words
The method as defined in claim 8 further comprising the step of, before selectively depositing the electroless metal, treating the deposition surface with an activating catalyst.
Claim 15
Dependent Claim
25 words
The method as defined in claim 8 further comprising the step of selecting the activating catalyst from the group consisting of palladium, silver and gold.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-17 | 2003-07-19 | 2004-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-17 | 2007-07-19 | 2008-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-17 | 2011-07-19 | 2012-01-18 | $7700.00 | Window Closed / Lapsed |