Surface-emitting laser and a fabrication method thereof

Claim 2

A surface-emitting laser comprising an active region which includes a light emitting layer and two mirrors which sandwich said active region, wherein at least one of said two mirrors has a distributed Bragg reflector structure which has a plurality of first layers including aluminum and a plurality of second layers different from said first layers; at least one selected layer of said plurality of first layers has a selective oxide region including aluminum and a core semiconductor region surrounded by said selective oxide region; and other layers of said plurality of first layers do not have said selective oxide region.

Claim 3

The surface-emitting laser of claim 1, wherein said core semiconductor region is made of a semiconductor including aluminum, and said plurality of second layers are each made of a semiconductor which is lattice matched with said semiconductor including aluminum.

Claim 4

The surface-emitting laser of claim 2, wherein said at least one selected layer having the selective oxide region is disposed closer to said active region than said other layers of said plurality of first layers which do not have said selective oxide region in said distributed Bragg reflector structure.

Claim 5

The surface-emitting laser of claim 3, wherein said distributed Bragg reflector structure includes a mesa at least in part thereof.

Claim 6

The surface-emitting laser of claim 4, wherein said mesa of said distributed Bragg reflector structure comprises two mesa sections having different outer diameters, and said selective oxide region is formed in a bottom mesa section of said two mesa sections.

Claim 7

The surface-emitting laser of claim 4, wherein said mesa in said distributed Bragg reflector structure includes a tapered portion at least in part thereof, and the tapered portion has an inclined side wall.

Claim 8

The surface-emitting laser of claim 6, wherein the inclined side wall of said mesa is at least partly covered with an electrode.

Claim 9

The surface-emitting laser of claim 7, wherein of said plurality of first layers, layers whose end surfaces are covered with said electrode do not substantially include said selective oxide region.

Claim 10

The surface-emitting laser of claim 1, wherein there is an intermediate layer disposed between each of said plurality of first layers and each of said plurality of second layers.

Claim 11

The surface-emitting laser of claim 1, wherein each of said two mirrors has said distributed Bragg reflector structure including said selective oxide region.

Claim 12

The surface-emitting laser of claim 1, wherein one of said two mirrors is made of a dielectric multi-layered film.

Claim 13

The surface-emitting laser of claim 2, wherein said core semiconductor region is made of AlAs and said plurality of second layers are made of GaAs.

Claim 14

A surface-emitting laser comprising an active region which includes a light emitting layer and two mirrors which sandwich said active region, wherein at least one of said two mirrors has a distributed Bragg reflector structure which has a plurality of first layers including aluminum and a plurality of second layers different from said first layers; at least one selected layer of said plurality of first layers has a surface passivation region and a core semiconductor region surrounded by said surface passivation region; and other layers of said plurality of first layers do not have said surface passivation region.

Claim 15

A surface-emitting laser comprising an active region which includes a light emitting layer and two mirrors which sandwich said active region, wherein at least one of said two mirrors has a distributed Bragg reflector structure which has a plurality of first layers including aluminum and a plurality of second layers different from said first layers; at least one selected layer of said plurality of first layers has a surface passivation region and a core semiconductor region surrounded by said surface passivation region; and other layers of said plurality of first layers do not have said surface passivation region.

Claim 16

The surface-emitting laser of claim 13, wherein said surface passivation region is formed in a selective oxidation process.

Claim 17

A surface-emitting laser array comprising a plurality of vertical cavities arranged on a single substrate, said surface-emitting laser array further comprising a single bottom mirror which is shared by said plurality of vertical cavities, a plurality of top mirrors associated with a respective one of said plurality of vertical cavities, and a plurality of active regions disposed between said plurality of top mirrors and said bottom mirror, wherein at least one of said bottom mirror and said plurality of top mirrors has a distributed Bragg reflector structure which has a plurality of first layers including aluminum and a plurality of second layers different from said first layers; at least one selected layer of said plurality of first layers has a selective oxide region including aluminum and a core semiconductor region surrounded by said selective oxide region; and other layers of said plurality of first layers do not have said selective oxide region.

Claim 18

A surface-emitting laser array comprising a plurality of vertical cavities arranged on a single substrate, said surface-emitting laser array further comprising a single bottom mirror which is shared by said plurality of vertical cavities, a plurality of top mirrors associated with a respective one of said plurality of vertical cavities, and a plurality of active regions disposed between said plurality of top mirrors and said bottom mirror, wherein at least one of said bottom mirror and said plurality of top mirrors has a distributed Bragg reflector structure which has a plurality of first layers including aluminum and a plurality of second layers different from said first layers; at least one selected layer of said plurality of first layers has a selective oxide region including aluminum and a core semiconductor region surrounded by said selective oxide region; and other layers of said plurality of first layers do not have said selective oxide region.