US6013574A
Expired / Lapsed
US
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Method of forming low resistance contact structures in vias arranged between two levels of interconnect lines
Assignee: Advanced Micro Devices Inc
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Filing: 1997-08-05
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Granted: 2000-01-11
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Expires: 2017-08-05
Abstract
Abstract A method of forming low resistance contact structures in vias arranged between interconnect levels is provided. The method involves interconnect lines having an anti-reflective layer formed thereupon. An interlevel dielectric layer is formed over the interconnect lines. A photoresist layer is formed over the interlevel dielectric layer and patterned to define via locations. During via etch, an organic (carbon-based) polymer layer forms upon the anti-reflective-coated interconnect lines at the bottoms of the vias. The photoresist and the etch byproduct polymer layers are then removed using a dry etch process which employs a forming gas comprising nitrogen and hydrogen. A native oxide layer subsequently forms upon the anti-reflective-coated interconnect lines when exposed to oxygen. The native oxide layer is then removed, along with any residual etch byproduct polymer, during a sputter etch procedure. Each resulting via is substantially void of polymer and oxide residue so as to present a clean via area which allows ready adherence of a plug material to the anti-reflective coating.
Inventors
- 👤 Fred N. Hause
- 👤 Michael J. Gatto
- 👤 Kuang-Yeh Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:38
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/23; H10P70/234; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/286; H10P50/287; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
126 words
A method of forming an opening through an interlevel dielectric to an underlying interconnect line, comprising: providing a coated interconnect line extending partially across an upper topography of a silicon substrate, and further providing an interlevel dielectric across said interconnect line and said upper topography; applying a photoresist layer across said interlevel dielectric; selectively removing said photoresist layer and underlying said interlevel dielectric to expose a portion of the coated interconnect line; plasma etch removing an etch byproduct polymer formed upon the exposed said portion of the coated interconnect line; and sputter etch removing a native oxide layer formed upon the exposed said portion of the coated interconnect line for a time period required to remove approximately 200 angstroms or more of said native oxide layer.
Claim 2
Independent Claim
126 words
A method of forming an opening through an interlevel dielectric to an underlying interconnect line, comprising: providing a coated interconnect line extending partially across an upper topography of a silicon substrate, and further providing an interlevel dielectric across said interconnect line and said upper topography; applying a photoresist layer across said interlevel dielectric; selectively removing said photoresist layer and underlying said interlevel dielectric to expose a portion of the coated interconnect line; plasma etch removing an etch byproduct polymer formed upon the exposed said portion of the coated interconnect line; and sputter etch removing a native oxide layer formed upon the exposed said portion of the coated interconnect line for a time period required to remove approximately 200 angstroms or more of said native oxide layer.
Claim 3
Dependent Claim
57 words
The method as recited in claim 1, further comprising: depositing a layer of titanium nitride (TiN) upon the exposed said portion of coated interconnect line; depositing a layer of tungsten (W) upon the layer of titanium nitride; removing both W and TiN layers to an elevational level substantially equal to an upper surface of said interlevel dielectric.
Claim 4
Dependent Claim
20 words
The method as recited in claim 2, wherein the step of removing the W and TiN layers comprises chemical-mechanical polishing.
Claim 5
Dependent Claim
17 words
The method as recited in claim 2, wherein removing W and TiN layers comprise plasma etch removing.
Claim 6
Dependent Claim
33 words
The method as recited in claim 2, wherein removing W and TiN layers comprise plasma etch removing said layers to an upper surface having an elevational level substantially equal to said interlevel dielectric.
Claim 7
Dependent Claim
17 words
The method as recited in claim 1, wherein said photoresist layer is applied using a spin-coat method.
Claim 8
Dependent Claim
30 words
The method as recited in claim 1, wherein selectively removing said interlevel dielectric comprises inserting the silicon substrate into a reaction chamber containing a reactant gas comprising carbon and fluorine.
Claim 9
Dependent Claim
17 words
The method as recited in claim 7, wherein the reactant gas comprises C 2 F 6 .
Claim 10
Dependent Claim
30 words
The method as recited in claim 7, wherein the silicon substrate is inserted between a pair of charged electrodes arranged within the reaction chamber pressurized at less than atmospheric pressure.
Claim 11
Dependent Claim
29 words
The method as recited in claim 1, wherein said plasma etch removing comprises exposing the silicon substrate to oxygen and forming gases which form a flow of reactant gases.
Claim 12
Dependent Claim
29 words
The method as recited in claim 10, wherein said exposing the silicon substrate comprises inserting the silicon substrate between a pair of electrodes arranged within an evacuated reaction chamber.
Claim 13
Dependent Claim
36 words
The method as recited in claim 1, wherein said plasma etch removing an etch byproduct polymer comprises inserting the silicon substrate between a pair of charged electrodes arranged in an ambient comprising nitrogen and hydrogen gases.
Claim 14
Dependent Claim
18 words
The method as recited in claim 1, wherein the interconnect line is coated with a layer of TiN.
Claim 15
Independent Claim
167 words
A method for forming a low resistance contact structure, comprising: providing an interlevel dielectric upon an interconnect line which extends across a semiconductor topography; allowing a polymer to form upon the interconnect line while removing the interlevel dielectric directly above at least a portion of said interconnect line; removing the polymer using a plasma with a flow rate sufficient to expose said interconnect line to an oxide forming ambient; and removing an oxide from the interconnect line resulting from the oxide forming ambient to again expose said interconnect line, and thereafter depositing a plug material upon the again exposed said interconnect line to form a contact structure substantially void of polymer and oxide, wherein said removing the polymer comprises subjecting the polymer to a forming gas comprising nitrogen and hydrogen at a flow rate approximately equal to or exceeding 3000 sccm, and said removing an oxide comprises subjecting the oxide to a sputter etch for a time period required to remove at least 200 angstroms of oxide.
Claim 16
Independent Claim
167 words
A method for forming a low resistance contact structure, comprising: providing an interlevel dielectric upon an interconnect line which extends across a semiconductor topography; allowing a polymer to form upon the interconnect line while removing the interlevel dielectric directly above at least a portion of said interconnect line; removing the polymer using a plasma with a flow rate sufficient to expose said interconnect line to an oxide forming ambient; and removing an oxide from the interconnect line resulting from the oxide forming ambient to again expose said interconnect line, and thereafter depositing a plug material upon the again exposed said interconnect line to form a contact structure substantially void of polymer and oxide, wherein said removing the polymer comprises subjecting the polymer to a forming gas comprising nitrogen and hydrogen at a flow rate approximately equal to or exceeding 3000 sccm, and said removing an oxide comprises subjecting the oxide to a sputter etch for a time period required to remove at least 200 angstroms of oxide.
Claim 17
Dependent Claim
24 words
The method as recited in claim 14, wherein said removing the polymer further comprises flowing the forming gas between a pair of charged electrodes.
Claim 18
Dependent Claim
25 words
The method as recited in claim 14, wherein the forming gas comprises approximately 96% nitrogen (N 2 ) and approximately 4% hydrogen (H 2 ).
Claim 19
Independent Claim
134 words
A method of forming an opening through an interlevel dielectric to an underlying interconnect line, comprising: providing a coated interconnect line extending partially across an upper topography of a silicon substrate, and further providing an interlevel dielectric across said interconnect line and said upper topography; applying a photoresist layer across said interlevel dielectric; selectively removing said photoresist layer and underlying said interlevel dielectric to expose a portion of the coated interconnect line; plasma etch removing an etch byproduct polymer formed upon the exposed said portion of the coated interconnect line, wherein said plasma etch removing comprises flowing a forming gas into a plasma chamber at a flow rate approximately equal to or exceeding 3000 sccm; and sputter etch removing a native oxide layer formed upon the exposed said portion of the coated interconnect line.
Claim 20
Independent Claim
134 words
A method of forming an opening through an interlevel dielectric to an underlying interconnect line, comprising: providing a coated interconnect line extending partially across an upper topography of a silicon substrate, and further providing an interlevel dielectric across said interconnect line and said upper topography; applying a photoresist layer across said interlevel dielectric; selectively removing said photoresist layer and underlying said interlevel dielectric to expose a portion of the coated interconnect line; plasma etch removing an etch byproduct polymer formed upon the exposed said portion of the coated interconnect line, wherein said plasma etch removing comprises flowing a forming gas into a plasma chamber at a flow rate approximately equal to or exceeding 3000 sccm; and sputter etch removing a native oxide layer formed upon the exposed said portion of the coated interconnect line.
Claim 21
Independent Claim
141 words
A method of forming an opening through an interlevel dielectric to an underlying interconnect line, comprising: providing a coated interconnect line extending partially across an upper topography of a silicon substrate, and further providing an interlevel dielectric across said interconnect line and said upper topography; applying a photoresist layer across said interlevel dielectric; selectively removing said photoresist layer and underlying said interlevel dielectric to expose a portion of the coated interconnect line; plasma etch removing an etch byproduct polymer formed upon the exposed said portion of the coated interconnect line, wherein said plasma etch removing comprises flowing a forming gas into a plasma chamber, wherein the forming gas comprises approximately 96% nitrogen (N 2 ) and approximately 4% hydrogen (H 2 ); and sputter etch removing a native oxide layer formed upon the exposed said portion of the coated interconnect line.
Claim 22
Independent Claim
141 words
A method of forming an opening through an interlevel dielectric to an underlying interconnect line, comprising: providing a coated interconnect line extending partially across an upper topography of a silicon substrate, and further providing an interlevel dielectric across said interconnect line and said upper topography; applying a photoresist layer across said interlevel dielectric; selectively removing said photoresist layer and underlying said interlevel dielectric to expose a portion of the coated interconnect line; plasma etch removing an etch byproduct polymer formed upon the exposed said portion of the coated interconnect line, wherein said plasma etch removing comprises flowing a forming gas into a plasma chamber, wherein the forming gas comprises approximately 96% nitrogen (N 2 ) and approximately 4% hydrogen (H 2 ); and sputter etch removing a native oxide layer formed upon the exposed said portion of the coated interconnect line.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2003-01-10 | 2003-07-12 | 2004-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-10 | 2007-07-12 | 2008-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-10 | 2011-07-12 | 2012-01-11 | $7700.00 | Window Closed / Lapsed |