US5420070A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing method of interconnection structure of semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1994-02-07
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Granted: 1995-05-30
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Expires: 2014-02-07
Abstract
Abstract In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first aluminum interconnection layer is electrically connected to a second aluminum interconnection layer through a connection hole. The second aluminum interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first aluminum interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.
Inventors
- 👤 Megumi Matsuura
- 👤 Tomohiro Ishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/047; H10W20/049; H10W20/071; H10W20/081; H10W20/42
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
123 words
A manufacturing method of an interconnection structure of a semiconductor device, comprising the steps of forming a first aluminum-containing layer on a main surface of a semiconductor substrate; forming a tungsten layer on said first aluminum-containing layer; forming an insulating layer on said tungsten layer; forming a through-hole through which a surface of said tungsten layer is exposed by selectively removing said insulating layer; forming a titanium layer on said insulating layer to be in contact with the surface of said tungsten layer through said through-hole; forming a titanium compound layer on said titanium layer; selectively forming a metal-containing layer filling said through-hole on said titanium compound layer; and forming a second aluminum-containing layer on said metal-containing layer and said titanium compound layer.
Claim 2
Dependent Claim
123 words
A manufacturing method of an interconnection structure of a semiconductor device, comprising the steps of forming a first aluminum-containing layer on a main surface of a semiconductor substrate; forming a tungsten layer on said first aluminum-containing layer; forming an insulating layer on said tungsten layer; forming a through-hole through which a surface of said tungsten layer is exposed by selectively removing said insulating layer; forming a titanium layer on said insulating layer to be in contact with the surface of said tungsten layer through said through-hole; forming a titanium compound layer on said titanium layer; selectively forming a metal-containing layer filling said through-hole on said titanium compound layer; and forming a second aluminum-containing layer on said metal-containing layer and said titanium compound layer.
Claim 3
Dependent Claim
36 words
The manufacturing method of an interconnection structure of a semiconductor device according to claim 1, wherein said step of forming a through-hole comprises the step of sputter-etching the surface of said tungsten layer with argon ion.
Claim 4
Dependent Claim
34 words
The manufacturing method of an interconnection structure of a semiconductor device according to claim 2, further comprising the step of causing reaction of said tungsten layer and said titanium layer by applying thermal process.
Claim 5
Dependent Claim
36 words
The manufacturing method of an interconnection structure of a semiconductor device according to claim 3, wherein said step of applying thermal process comprises the step of heating at a temperature of 300°-450° C. for 15-60 minutes.
Claim 6
Dependent Claim
23 words
The manufacturing method of an interconnection structure of a semiconductor device according to claim 1, wherein the tungsten layer is formed by sputtering.
Claim 7
Dependent Claim
43 words
The manufacturing method of an interconnection structure of a semiconductor device according to claim 1, wherein the tungsten layer is formed only on the top surface of the first aluminum-containing layer and is not formed on the sidewalls of the first aluminum-containing layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-05-29 | 1998-11-28 | 1999-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-29 | 2002-11-28 | 2003-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-29 | 2006-11-28 | 2007-05-30 | $7700.00 | Window Closed / Lapsed |