US5567271A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Oxygen reactive ion etch (RIE) plasma method for removing oxidized organic residues from semiconductor substrates
Assignee: GlobalFoundries Singapore Pte Ltd
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Filing: 1995-07-26
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Granted: 1996-10-22
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Expires: 2015-07-26
Abstract
Abstract A Reactive Ion Etch (RIE) plasma method for removing from semiconductor substrates oxidized organic residues such as oxidized photoresist residues, and the Reactive Ion Etch (RIE) plasma which is employed within the Reactive Ion Etch (RIE) plasma method. A semiconductor substrate upon whose surface resides an oxidized organic residue such as an oxidized photoresist residue is provided into a Reactive Ion Etch (RIE) plasma chamber. Also provided into the chamber is a concentration of oxygen and a concentration of moisture. Finally, a radio frequency excitation of sufficient magnitude is provided to the concentration of oxygen and the concentration of moisture to form a plasma. The oxidized organic residue which resides upon the semiconductor substrate is then removed through etching in the Reactive Ion Etch (RIE) plasma. The concentration of moisture may be introduced into the Reactive Ion Etch (RIE) chamber through desorbtion of moisture within and upon the surface of an oxidized photoresist residue residing upon a semiconductor substrate.
Inventors
- 👤 Ron F. Chu
- 👤 Chet P. Lim
- 👤 Sheau-Tan Loong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:00
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
145 words
A method for removing an oxidized photoresist residue from a semiconductor substrate comprising: providing into a reaction chamber a semiconductor substrate, the semiconductor substrate having formed upon its surface an oxidized photoresist residue, the oxidized photoresist residue being formed through implanting dopant ions into a corresponding non-implanted photoresist residue; providing into the reaction chamber a concentration of oxygen; providing into the reaction chamber a concentration of water vapor, the concentration of water vapor being introduced into the reaction chamber through desorbtion of an amount of water sorbed within and upon the surface of the oxidized photoresist residue formed upon the semiconductor substrate; providing a radio frequency excitation to the concentration of oxygen and the concentration of water vapor contained within the reaction chamber, the radio frequency excitation being sufficient to form a plasma; and etching the semiconductor substrate until the oxidized photoresist residue is removed.
Claim 2
Independent Claim
145 words
A method for removing an oxidized photoresist residue from a semiconductor substrate comprising: providing into a reaction chamber a semiconductor substrate, the semiconductor substrate having formed upon its surface an oxidized photoresist residue, the oxidized photoresist residue being formed through implanting dopant ions into a corresponding non-implanted photoresist residue; providing into the reaction chamber a concentration of oxygen; providing into the reaction chamber a concentration of water vapor, the concentration of water vapor being introduced into the reaction chamber through desorbtion of an amount of water sorbed within and upon the surface of the oxidized photoresist residue formed upon the semiconductor substrate; providing a radio frequency excitation to the concentration of oxygen and the concentration of water vapor contained within the reaction chamber, the radio frequency excitation being sufficient to form a plasma; and etching the semiconductor substrate until the oxidized photoresist residue is removed.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein the reaction chamber is maintained at a pressure of 0.1 to 5 torr.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein the reaction chamber is maintained at a temperature of 100 to 250 degrees centigrade.
Claim 5
Dependent Claim
33 words
The method of claim 1 wherein the concentration of oxygen is introduced into the reaction chamber through an external source of oxygen at 2000 to 5000 standard cubic centimeters per minute (sccm) flow.
Claim 6
Dependent Claim
49 words
The method of claim 1 wherein the amount of water sorbed within and upon the surface of the oxidized photoresist residue residing upon the semiconductor substrate is provided through a spin-dry process whereby the oxidized photoresist residue residing upon the semiconductor substrate is exposed to water and spun dry.
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein the radio frequency excitation is provided at 500 to 1000 watts.
Claim 8
Dependent Claim
15 words
The method of claim 1 additionally comprising a magnetic assistance to the radio frequency excitation.
Claim 9
Dependent Claim
16 words
The method of claim 7 wherein the magnetic assistance is provided at 10 to 100 gauss.
Claim 10
Dependent Claim
129 words
A plasma for use in removing an oxidized photoresist residue from a semiconductor substrate comprising: a concentration of oxygen contained within a reaction chamber; a concentration of water vapor contained within the reaction chamber, the concentration of water vapor being introduced into the reaction chamber through desorbtion of an amount of water sorbed within and upon the surface of an oxidized photoresist residue formed upon the surface of a semiconductor substrate when the semiconductor substrate is provided into the reaction chamber, the oxidized photoresist residue being formed through implanting dopant ions into a corresponding non-implanted photoresist residue formed upon the semiconductor substrate; and a radio frequency excitation provided to the concentration of oxygen and the concentration of water vapor, the radio frequency excitation being sufficient to form a plasma.
Claim 11
Dependent Claim
129 words
A plasma for use in removing an oxidized photoresist residue from a semiconductor substrate comprising: a concentration of oxygen contained within a reaction chamber; a concentration of water vapor contained within the reaction chamber, the concentration of water vapor being introduced into the reaction chamber through desorbtion of an amount of water sorbed within and upon the surface of an oxidized photoresist residue formed upon the surface of a semiconductor substrate when the semiconductor substrate is provided into the reaction chamber, the oxidized photoresist residue being formed through implanting dopant ions into a corresponding non-implanted photoresist residue formed upon the semiconductor substrate; and a radio frequency excitation provided to the concentration of oxygen and the concentration of water vapor, the radio frequency excitation being sufficient to form a plasma.
Claim 12
Dependent Claim
30 words
The plasma of claim 9 wherein the reaction chamber is maintained at a pressure of 0.1 to 5 torr and a temperature of about 100 to about 250 degrees centigrade.
Claim 13
Dependent Claim
33 words
The plasma of claim 9 wherein the concentration of oxygen is introduced into the reaction chamber through an external source of oxygen at 2000 to 5000 standard cubic centimeters per minute (sccm) flow.
Claim 14
Dependent Claim
49 words
The plasma of claim 9 wherein the amount of water sorbed within and upon the surface of the oxidized photoresist residue residing upon the semiconductor substrate is provided through a spin-dry process where the oxidized photoresist residue residing upon the semiconductor substrate is exposed to water and spun dry.
Claim 15
Dependent Claim
17 words
The plasma of claim 9 wherein the radio frequency excitation is provided at 500 to 1000 watts.
Claim 16
Dependent Claim
23 words
The plasma of claim 9 additionally comprising a magnetic assistance to the plasma, the magnetic assistance being provided at 10 to 100 gauss.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-22 | 2000-04-22 | 2000-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-22 | 2004-04-22 | 2004-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-22 | 2008-04-22 | 2008-10-22 | $7700.00 | Window Closed / Lapsed |