US4980022A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of removing a layer of organic matter
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1990-03-05
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Granted: 1990-12-25
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Expires: 2010-03-05
Abstract
Abstract A method removes a first layer of an organic matter which is formed on a second layer, where the first layer is subjected to an ion implantation. The method includes the steps of generating a plasma by exciting a gas which includes H 2 O using a high-frequency energy source, and removing the first layer within the plasma.
Inventors
- 👤 Shuzo Fujimura
- 👤 Kenichi Hikazutani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 14:04
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
58 words
A method of removing a first layer of an organic matter which is formed on a second layer, said first layer being subjected to an ion implantation, said method comprising the steps of: generating a plasma by exciting a gas which includes H 2 O using a high-frequency energy source; and removing the first layer within said plasma.
Claim 2
Independent Claim
58 words
A method of removing a first layer of an organic matter which is formed on a second layer, said first layer being subjected to an ion implantation, said method comprising the steps of: generating a plasma by exciting a gas which includes H 2 O using a high-frequency energy source; and removing the first layer within said plasma.
Claim 3
Dependent Claim
47 words
The method as claimed in claim 1 wherein said step of removing the first layer removes a first portion of the first layer, and said method further comprises the step of removing a remaining portion of the first layer by a downstream ashing using O 2 .
Claim 4
Dependent Claim
36 words
The method as claimed in claim 2 wherein the first portion of the first layer is degraded by the ion implantation and the remaining portion of the first layer is virtually unaffected by the ion implantation.
Claim 5
Dependent Claim
16 words
The method as claimed in claim 3 wherein the first layer is made of a resist.
Claim 6
Dependent Claim
25 words
The method as claimed in claim 4 wherein the step of removing the remaining portion uses a downstream ashing using O 2 +N 2 .
Claim 7
Dependent Claim
25 words
The method as claimed in claim 4 wherein the step of removing the remaining portion uses a downstream ashing using O 2 +H 2 O.
Claim 8
Dependent Claim
43 words
The method as claimed in claim 1 wherein said step of removing the first layer removes a first portion of the first layer, and said method further comprises the step of removing a remaining portion of the first layer by a wet etching.
Claim 9
Dependent Claim
36 words
The method as claimed in claim 7 wherein the first portion of the first layer is degraded by the ion implantation and the remaining portion of the first layer is virtually unaffected by the ion implantation.
Claim 10
Dependent Claim
32 words
The method as claimed in claim 1 wherein said step of generating the plasma uses a parallel plate type reactive ion etching apparatus to excite the gas which includes H 2 O.
Claim 11
Dependent Claim
61 words
The method as claimed in claim 1 wherein said step of removing the first layer removes a first portion of the first layer, and said method further comprises the step of removing a remaining portion of the first layer by a downstream ashing using a gas mixture which includes one of O 2 , H 2 O and N 2 .
Claim 12
Dependent Claim
28 words
The method as claimed in claim 1 wherein the first layer is subjected to an ion implantation at a dosage of at least 1×10 14 atoms/cm 2 .
References Cited (Backward Citations)
US4749440A
Cited
US4789427A
Cited
JPS63216346A
Cited
JPS63273321A
Cited
US4861424A
Cited
US4861732A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-24 | 1994-06-25 | 1994-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-24 | 1998-06-25 | 1998-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-24 | 2002-06-25 | 2002-12-25 | $7700.00 | Window Closed / Lapsed |