US4789427A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for removing resist from semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1987-05-19
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Granted: 1988-12-06
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Expires: 2007-05-19
Abstract
Abstract A method for removing a resist on a layer formed on a semiconductor substrate includes the steps of removing a portion of the resist by plasma processing and removing the remaining resist by a chemical process. This method prevents the entry of heavy metal particles contained in the resist into the semiconductor substrate, so that a functional region formed in the semiconductor substrate is not contaminated by the heavy metal particles. As a result, destruction of the functional elements formed in the functional region is prevented, and thus the minority carrier generation lifetime in the device is not reduced.
Inventors
- 👤 Shuzo Fujimura
- 👤 Yoshikazu Kato
- 👤 Syouzi Mochizuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 02:34
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; G03F7/422; H10P50/286; H10P50/287; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
54 words
A method for removing a resist of a semiconductor device, comprising the steps of: removing said resist on a layer formed on a semiconductor substrate having a functional region, in a direction of the thickness thereof by a predetermined thickness by applying plasma processing; and removing the remaining resist by applying a chemical process.
Claim 2
Independent Claim
54 words
A method for removing a resist of a semiconductor device, comprising the steps of: removing said resist on a layer formed on a semiconductor substrate having a functional region, in a direction of the thickness thereof by a predetermined thickness by applying plasma processing; and removing the remaining resist by applying a chemical process.
Claim 3
Dependent Claim
29 words
A method as set forth in claim 1, wherein said chemical process comprises a process using an electrically neutral gas which will cause a chemical removal of said resist.
Claim 4
Dependent Claim
27 words
A method as set forth in claim 1, wherein said chemical process comprises a process using a solution including an acid, an alkali or an organic solvent.
Claim 5
Dependent Claim
45 words
A method as set forth in claim 1, wherein said layer comprises a silicon dioxide insulation layer having a thickness of approximately 20 nm or less, and wherein the thickness of said remaining resist after the removal by said plasma processing is approximately 100 nm.
Claim 6
Dependent Claim
35 words
A method as set forth in claim 1, wherein said layer comprises a polysilicon conduction layer, and wherein the thickness of said remaining resist after the removal by said plasma processing is approximately 100 nm.
References Cited (Backward Citations)
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US4028155A
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US3920483A
Cited
US4279671A
Cited
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Cited
US4477310A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-06 | 1992-06-06 | 1992-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-06 | 1996-06-06 | 1996-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-06 | 2000-06-06 | 2000-12-06 | $7700.00 | Window Closed / Lapsed |