EP0040081A2
Expired / Lapsed
EP
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Method and apparatus for plasma etching
Assignee: Fujitsu Ltd
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Filing: 1981-05-11
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Granted: —
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Expires: 2001-05-11
Abstract
Abstract A method and an apparatus for plasma etching specimens 4 by providing an intermediate electrode 7 between the electrodes 1, 2 in parallel plates type plasma etching apparatus, moving the intermediate electrode 7 by a drive means8, and continuously changing from the condition ofthe high input power and high self-biasvoltage tothe condition of the low input power and low self-bias voltage while varying the distance between the intermediate electrode 7 and the first electrode 1 and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the specimen 4 is being subjected to processing.
Inventors
- 👤 Hikou Shibayama
- 👤 Tetsuya Ogawa
- 👤 Makoto Kosugi
- 👤 Tokushige Hisatsugu
- 👤 Koichi Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 13:20
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/32532; H01J37/32568; H01J37/32587; H01J37/34; H01J37/3411; H01J37/3438; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
78 words
A method for effecting plasma etching of a specimen by using a first and a second electrode, a specimen placed on said first electrode and an electrically floated intermediate electrode, a high frequency power being applied between said first and second electrode to produce the plasma between said first and second electrode, characterized in that said etching is carried out under the condition that the distance between said first and said intermediate electrode is changed during said etching.
Claim 2
Independent Claim
78 words
A method for effecting plasma etching of a specimen by using a first and a second electrode, a specimen placed on said first electrode and an electrically floated intermediate electrode, a high frequency power being applied between said first and second electrode to produce the plasma between said first and second electrode, characterized in that said etching is carried out under the condition that the distance between said first and said intermediate electrode is changed during said etching.
Claim 3
Dependent Claim
70 words
A method as set forth in claim 1, wherein the specimen is processed under the conditions of a high input power and a high self-bias voltage maintaining a predetermined distance between the intermediate electrode and the first electrode, and then said distance is reduced to be smaller than said predetermined distance, thereby to further process the specimen under the conditions of a low input power and a low self-bias voltage.
Claim 4
Dependent Claim
31 words
A method as set forth in claim 1 or 2, wherein the specimen is subjected to the etching while continuously changing the distance between said intermediate electrode and said first electrode.
Claim 5
Dependent Claim
100 words
A method as set forth in claim 1 or 2, wherein the distance between said intermediate electrode and said first electrode is set to a predetermined length, said high frequency power is set to a predetermined value, the layer on the specimen is removed by using a first reactive gas, the distance between said intermediate electrode and said first electrode is then reduced to be smaller than said predetermined length, the high frequency power is set to a value which is smaller than said predetermined value, and the specimen is subjected to additional etching by using a second reactive gas.
Claim 6
Dependent Claim
64 words
A method as set forth in claim 1 or 2, wherein when the layer to be removed is composed of Si0 2 , any one of CHF 3 C 2 F 6 , C 3 F 8 , and CF 4 + H 2 is used as the first reactive gas, and CF 4 + 0 2 is used as the second reactive gas.
Claim 7
Dependent Claim
66 words
A method as set forth in claim 1 or 2, wherein when the layer to be removed is composed of Si 3 N 4 , any one of CHF 3 , C 2 F 6 , C 3 F 8 , and CF 4 +.H 2 is used as the first reactive gas, and CF 4 + 0 2 is used as the second reactive gas.
Claim 8
Independent Claim
45 words
An apparatus for plasma etching comprising a first electrode, a second electrode, and an electrically floated intermediate electrode installed between said two electrodes, characterized in that said apparatus further comprises a drive mechanism for varying the distance between said intermediate electrode and said first electrode.
Claim 9
Independent Claim
45 words
An apparatus for plasma etching comprising a first electrode, a second electrode, and an electrically floated intermediate electrode installed between said two electrodes, characterized in that said apparatus further comprises a drive mechanism for varying the distance between said intermediate electrode and said first electrode.
Claim 10
Dependent Claim
23 words
An apparatus for plasma etching as set forth in claim 7, wherein the thickness of said intermediate electrode is smaller than 2 mm.
References Cited (Backward Citations)
No citation records indexed.
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