US6013551A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured thereby
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1997-09-26
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Granted: 2000-01-11
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Expires: 2017-09-26
Abstract
Abstract A method of manufacture of self-aligned floating gate, flash memory device on a semiconductor substrate includes the following steps. Form a blanket silicon oxide layer over the substrate. Form a blanket floating gate conductor layer over the silicon oxide layer. Pattern the blanket silicon oxide layer, the floating gate conductor layer and the substrate in a patterning process with a single floating gate electrode mask forming floating gate electrodes from the floating gate conductor layer and the silicon oxide layer; and simultaneously form trenches in the substrate adjacent to the floating gate electrode and aligned with the floating gate electrodes thereby patterning the active region in the substrate. Form a blanket dielectric layer on the device filling the trenches and planarized with the top surface of the floating gate electrodes. Form an interconductor dielectric layer over the device including the floating gate electrodes. Form a control gate conductor over the interconductor dielectric layer.
Inventors
- 👤 Jong Chen
- 👤 Chrong Jung Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:23
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
150 words
A method of manufacture of self-aligned floating gate, flash memory device on a semiconductor substrate comprising: forming a blanket silicon oxide layer over said substrate, forming a blanket floating gate conductor layer over said silicon oxide layer, patterning said blanket silicon oxide layer, said floating gate conductor layer and said substrate in a patterning process with a single floating gate electrode mask forming a floating gate electrode from said floating gate conductor layer and said silicon oxide layer and simultaneously forming trenches in said substrate adjacent to said floating gate electrode and aligned with said floating gate electrode thereby patterning the active region in said substrate, forming a blanket trench dielectric structure filling said trenches and planarizing said trench dielectric structure with the surface of said floating gate electrode, forming an interconductor dielectric layer over said floating gate electrode, and forming a control gate conductor over said interconductor dielectric layer.
Claim 2
Independent Claim
150 words
A method of manufacture of self-aligned floating gate, flash memory device on a semiconductor substrate comprising: forming a blanket silicon oxide layer over said substrate, forming a blanket floating gate conductor layer over said silicon oxide layer, patterning said blanket silicon oxide layer, said floating gate conductor layer and said substrate in a patterning process with a single floating gate electrode mask forming a floating gate electrode from said floating gate conductor layer and said silicon oxide layer and simultaneously forming trenches in said substrate adjacent to said floating gate electrode and aligned with said floating gate electrode thereby patterning the active region in said substrate, forming a blanket trench dielectric structure filling said trenches and planarizing said trench dielectric structure with the surface of said floating gate electrode, forming an interconductor dielectric layer over said floating gate electrode, and forming a control gate conductor over said interconductor dielectric layer.
Claim 3
Dependent Claim
29 words
A method in accordance with claim 1 wherein said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å.
Claim 4
Dependent Claim
50 words
A method in accordance with claim 1 wherein: said blanket silicon oxide layer comprises a tunnel oxide layer having a thickness from about 70 Å to about 150 Å, said floating gate conductor layer comprises a doped polysilicon layer having a thickness from about 500 Å to about 2,000 Å.
Claim 5
Dependent Claim
152 words
A method in accordance with claim 1 wherein: said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å, said floating gate conductor layer comprises a doped polysilicon layer having a thickness from about 500 Å to about 2,000 Å, and said blanket trench dielectric structure comprises first a thin, thermal, silicon oxide layer with a thickness from about 200 Å to about 500 Å grown by a conventional thermal oxidation process on the exposed surfaces at the base of said trench structure, second a PECVD silicon oxide layer with a thickness from about 200 Å to about 2,000 Å is coated on the surfaces of the thermal silicon oxide layer, and third a SACVD silicon oxide layer having a thickness from about 5,000 Å to about 20,000 Å filling up the trenches and extending above the surface of said floating gate.
Claim 6
Dependent Claim
175 words
A method in accordance with claim 1 wherein: said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å, said floating gate conductor layer comprises a doped polysilicon layer having a thickness from about 500 Å to about 2,000 Å, said blanket trench dielectric structure comprises first a thin, thermal, silicon oxide layer with a thickness from about 200 Å to about 500 Å grown by a thermal oxidation process on the exposed surfaces at the base of said trench structure, second a PECVD silicon oxide layer having a thickness from about 200 Å to about 2,000 Å is coated on the surfaces of the thermal silicon oxide layer, and third a SACVD silicon oxide layer with a thickness from about 5,000 Å to about 20,000 Å filling up the trenches and extending above the surface of said floating gate electrode, said planarizing of said blanket trench dielectric structure is accomplished by a step selected from the group consisting of etching and chemical mechanical polishing.
Claim 7
Independent Claim
218 words
A method of manufacture of self-aligned floating gate, flash memory device on a semiconductor substrate which comprising: forming a blanket silicon oxide layer over said substrate, forming a blanket floating gate conductor layer over said silicon oxide layer, patterning said blanket silicon oxide layer, said floating gate conductor layer and said substrate in a patterning process with a single mask forming a floating gate electrode from said floating gate conductor layer and said silicon oxide layer and simultaneously forming trenches in said substrate adjacent to said floating gate electrode and said trenches being self-aligned with said floating gate electrode, forming a blanket trench dielectric structure filling said trenches and covering said floating gate conductor layer, planarizing said blanket trench dielectric structure with the surface of said floating gate conductor, forming an interconductor dielectric layer over said floating gate electrode, and forming a control gate conductor over said interconductor dielectric layer, patterning said control gate conductor, said floating gate conductor, and said silicon oxide layer to form a gate electrode stack, etching away said trench dielectric leaving the surface of said substrate and said trenches exposed adjacent to said gate electrode stack, and performing doping of the source/drain regions in exposed portions of said substrate adjacent to said gate electrode stack to form source/drain regions separated by said trenches.
Claim 8
Independent Claim
218 words
A method of manufacture of self-aligned floating gate, flash memory device on a semiconductor substrate which comprising: forming a blanket silicon oxide layer over said substrate, forming a blanket floating gate conductor layer over said silicon oxide layer, patterning said blanket silicon oxide layer, said floating gate conductor layer and said substrate in a patterning process with a single mask forming a floating gate electrode from said floating gate conductor layer and said silicon oxide layer and simultaneously forming trenches in said substrate adjacent to said floating gate electrode and said trenches being self-aligned with said floating gate electrode, forming a blanket trench dielectric structure filling said trenches and covering said floating gate conductor layer, planarizing said blanket trench dielectric structure with the surface of said floating gate conductor, forming an interconductor dielectric layer over said floating gate electrode, and forming a control gate conductor over said interconductor dielectric layer, patterning said control gate conductor, said floating gate conductor, and said silicon oxide layer to form a gate electrode stack, etching away said trench dielectric leaving the surface of said substrate and said trenches exposed adjacent to said gate electrode stack, and performing doping of the source/drain regions in exposed portions of said substrate adjacent to said gate electrode stack to form source/drain regions separated by said trenches.
Claim 9
Dependent Claim
29 words
A method in accordance with claim 6 wherein said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å.
Claim 10
Dependent Claim
50 words
A method in accordance with claim 6 wherein: said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å, said floating gate conductor layer comprises a doped polysilicon layer having a thickness from about 500 Å to about 2,000 Å.
Claim 11
Dependent Claim
152 words
A method in accordance with claim 6 wherein: said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å, said floating gate conductor layer comprises a doped polysilicon layer having a thickness from about 500 Å to about 2,000 Å, and said blanket trench dielectric structure comprises first a thin, thermal, silicon oxide layer with a thickness from about 200 Å to about 500 Å grown by a thermal oxidation process on the exposed surfaces at the base of said trench structure, second a PECVD silicon oxide layer with a thickness from about 200 Å to about 2,000 Å is coated on the surfaces of the thermal silicon oxide layer, and third a SACVD silicon oxide layer having a thickness from about 5,000 Å to about 20,000 Å filling up the trenches and extending above the surface of said floating gate electrode.
Claim 12
Dependent Claim
175 words
A method in accordance with claim 6 wherein: said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å, said floating gate conductor layer comprises a doped polysilicon layer having a thickness from about 500 Å to about 2,000 Å, said blanket trench dielectric structure comprises first a thin, thermal, silicon oxide layer with a thickness from about 200 Å to about 500 Å grown by a thermal oxidation process on the exposed surfaces at the base of said trench structure, second a PECVD silicon oxide layer with a thickness from about 200 Å to about 2,000 Å is coated on the surfaces of the thermal silicon oxide layer, and third a SACVD silicon oxide layer having a thickness from about 5,000 Å to about 20,000 Å filling up the trenches and extending above the surface of said floating gate electrode, said planarizing of said blanket trench dielectric structure is accomplished by a step selected from the group consisting of etching and chemical mechanical polishing.
Claim 13
Independent Claim
216 words
A method of manufacture of self-aligned floating gate, flash memory device on a semiconductor substrate comprising: forming a blanket tunnel oxide layer over said substrate, forming a blanket floating gate doped polysilicon layer over said silicon oxide layer, patterning said blanket silicon oxide layer, said floating gate, polysilicon layer and said substrate in a patterning process with a single mask forming a floating gate electrode from said floating gate polysilicon layer and said tunnel oxide layer and simultaneously forming a trenches in said substrate adjacent to said floating gate electrode and aligned therewith, forming trench dielectric structure on the surface of said trenches as follows: forming a blanket, thin thermal oxide dielectric layer on said trenches and covering said floating gate conductor layer, forming a blanket, thin PECVD silicon oxide dielectric layer on said device including said trenches and covering said thin thermal oxide dielectric layer, and forming a blanket, SACVD silicon oxide dielectric layer on said device filling said trenches and covering said floating gate electrode with a thick film of silicon oxide material, and planarizing said trench dielectric structure with the surface of said floating gate conductor by a CMP processing step, forming an interconductor ONO dielectric layer over said floating gate electrode, and forming a control gate conductor over said interconductor dielectric layer.
Claim 14
Independent Claim
216 words
A method of manufacture of self-aligned floating gate, flash memory device on a semiconductor substrate comprising: forming a blanket tunnel oxide layer over said substrate, forming a blanket floating gate doped polysilicon layer over said silicon oxide layer, patterning said blanket silicon oxide layer, said floating gate, polysilicon layer and said substrate in a patterning process with a single mask forming a floating gate electrode from said floating gate polysilicon layer and said tunnel oxide layer and simultaneously forming a trenches in said substrate adjacent to said floating gate electrode and aligned therewith, forming trench dielectric structure on the surface of said trenches as follows: forming a blanket, thin thermal oxide dielectric layer on said trenches and covering said floating gate conductor layer, forming a blanket, thin PECVD silicon oxide dielectric layer on said device including said trenches and covering said thin thermal oxide dielectric layer, and forming a blanket, SACVD silicon oxide dielectric layer on said device filling said trenches and covering said floating gate electrode with a thick film of silicon oxide material, and planarizing said trench dielectric structure with the surface of said floating gate conductor by a CMP processing step, forming an interconductor ONO dielectric layer over said floating gate electrode, and forming a control gate conductor over said interconductor dielectric layer.
Claim 15
Dependent Claim
29 words
A method in accordance with claim 11 wherein said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å.
Claim 16
Dependent Claim
50 words
A method in accordance with claim 11 wherein: said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å, said floating gate conductor layer comprises a doped polysilicon layer having a thickness from about 500 Å to about 2,000 Å.
Claim 17
Dependent Claim
151 words
A method in accordance with claim 11 wherein: said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å, said floating gate conductor layer comprises a doped polysilicon layer having a thickness from about 500 Å to about 2,000 Å, and said blanket trench dielectric structure comprises first a thin, thermal, silicon oxide layer with a thickness from about 200 Å to about 500 Å grown by a thermal oxidation process on the exposed surfaces at the base of said trench structure, second a PECVD silicon oxide layer having a thickness from about 200 Å to about 2,000 Å is coated on the surfaces of the thermal silicon oxide layer, and third a SACVD silicon oxide layer having a thickness from about 5,000Å to about 20,000 Å filling up the trenches and extending above the surface of said floating gate electrode.
Claim 18
Dependent Claim
175 words
A method in accordance with claim 11 wherein: said blanket silicon oxide layer comprises a tunnel oxide layer with a thickness from about 70 Å to about 150 Å, said floating gate conductor layer comprises a doped polysilicon layer having a thickness from about 500 Å to about 2,000 Å, said blanket trench dielectric structure comprises first a thin, thermal, silicon oxide layer with a thickness from about 200 Å to about 500 Å grown by a thermal oxidation process on the exposed surfaces at the base of said trench structure, second a PECVD silicon oxide layer having a thickness from about 200 Å to about 2,000 Å is coated on the surfaces of the thermal silicon oxide layer, and third a SACVD silicon oxide layer having a thickness from about 5,000 Å to about 20,000 Å filling up the trenches and extending above the surface of said floating gate electrode, said planarizing of said blanket trench dielectric structure is accomplished by a step selected from the group consisting of etching and chemical mechanical polishing.
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