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US6008540A
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Integrated circuit dielectric and method
Assignee: Texas Instruments Inc
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Filing: 1998-05-28
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Granted: 1999-12-28
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Expires: 2018-05-28
Abstract
Abstract A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include surface group substitution, pore collapse, and gap filling layer (520) which invades open surface pores (514) of xerogel (510).
Inventors
- 👤 Jiong-Ping Lu
- 👤 Changming Jin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 05:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6529; H10P14/6534; H10P14/6546; H10P14/6548; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10W20/072; H10W20/074; H10W20/075; H10W20/077; H10W20/093; H10W20/095; H10W20/096; H10W20/098; H10W20/40; H10W20/45; H10W20/46; H10W20/47; H10W20/48; H10W20/495; H10W74/00; H10W74/40; H10W74/47; H10W74/476; H10P14/63; H10P14/6326; H10P14/6342; H10P14/665; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P95/00
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
65 words
An integrated circuit dielectric structure, comprising: (a) a porous dielectric layer between conductors of an integrated circuit, said dielectric layer having a plurality of pores; (b) wherein the pores of said porous dielectric layer have (i) hydrophobic surfaces for pores away from an upper surface of said porous dielectric layer and (ii) nonhydrophobic surfaces for pores at said upper surface of said porous dielectric layer.
Claim 2
Dependent Claim
65 words
An integrated circuit dielectric structure, comprising: (a) a porous dielectric layer between conductors of an integrated circuit, said dielectric layer having a plurality of pores; (b) wherein the pores of said porous dielectric layer have (i) hydrophobic surfaces for pores away from an upper surface of said porous dielectric layer and (ii) nonhydrophobic surfaces for pores at said upper surface of said porous dielectric layer.
Claim 3
Dependent Claim
29 words
The dielectric structure of claim 1, wherein: (a) said porous dielectric is a porous silica polymer with organic groups bonded to the pore surfaces for said hydrophobic pore surfaces.
References Cited (Backward Citations)
US5523615A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-27 | 2003-06-28 | 2003-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-27 | 2007-06-28 | 2007-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-27 | 2011-06-28 | 2011-12-28 | $7700.00 | Window Closed / Lapsed |