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US6007950A
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Structure of a phase shifting mask and method of fabricating the same
Assignee: United Microelectronics Corp
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Filing: 1998-05-26
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Granted: 1999-12-28
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Expires: 2018-05-26
Abstract
Abstract A method for fabricating an alternating phase shifting mask includes a transparent substrate, a number of oblique layers formed on the transparent substrate, and a number of embedded phase shift layers inside the transparent substrate. Then, a photolithography process is applied to form a photoresist layer on the transparent substrate corresponding to a desired pattern and, therefore, exposing a portion of the transparent substrate. Then, an ion implantation process utilizing the photoresist layer as a mask is applied to form the embedded phase shift layers and the photoresist layer is removed after ion implantation. The embedded phase shift layers are formed in alternating positions in the transparent portion between the oblique layers.
Inventors
- 👤 Benjamin Szu-Min Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 10:59
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/30
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
100 words
A method for fabrication of an alternating phase shifting mask, the method comprising: providing a transparent substrate; forming a patterned opaque layer on the transparent substrate; forming a patterned photoresist layer over the patterned opaque layer to expose a portion of the transparent substrate after the patterned opaque layer is formed; applying an ion implantation process by using the photoresist as a mask to form an embedded phase shift layer in a portion of the transparent substrate exposed by the patterned photoresist layer and the patterned opaque layer after the patterned photoresist layer is formed; and removing the photoresist layer.
Claim 2
Independent Claim
100 words
A method for fabrication of an alternating phase shifting mask, the method comprising: providing a transparent substrate; forming a patterned opaque layer on the transparent substrate; forming a patterned photoresist layer over the patterned opaque layer to expose a portion of the transparent substrate after the patterned opaque layer is formed; applying an ion implantation process by using the photoresist as a mask to form an embedded phase shift layer in a portion of the transparent substrate exposed by the patterned photoresist layer and the patterned opaque layer after the patterned photoresist layer is formed; and removing the photoresist layer.
Claim 3
Dependent Claim
11 words
The method of claim 1, wherein the transparent substrate comprises quartz.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein the opaque layer comprises chromium (Cr).
Claim 5
Dependent Claim
16 words
The method of claim 1, wherein embedded phase shift layer comprises a doped region with dopant.
Claim 6
Dependent Claim
31 words
The structure of claim 1, wherein the opaque layer comprises a discrete distribution in a sectional view of the transparent substrate so that a portion of the transparent substrate is exposed.
Claim 7
Dependent Claim
21 words
The structure of claim 5, wherein the embedded phase shift layer is located in the exposed portion of the transparent substrate.
Claim 8
Dependent Claim
23 words
The structure of claim 6, wherein the embedded phase shift layer appears in alternating positions in the exposed portion of the transparent substrate.
Claim 9
Dependent Claim
57 words
A structure of an alternating phase shifting mask, the structure comprising: a transparent substrate; a patterned opaque layer formed on the transparent substrate; and an embedded phase shift layer formed inside the transparent substrate exposed by application of an ion implantation process using the patterned opaque layer as a mask, after the patterned opaque layer is formed.
Claim 10
Dependent Claim
57 words
A structure of an alternating phase shifting mask, the structure comprising: a transparent substrate; a patterned opaque layer formed on the transparent substrate; and an embedded phase shift layer formed inside the transparent substrate exposed by application of an ion implantation process using the patterned opaque layer as a mask, after the patterned opaque layer is formed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-27 | 2003-06-28 | 2003-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-27 | 2007-06-28 | 2007-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-27 | 2011-06-28 | 2011-12-28 | $7700.00 | Window Closed / Lapsed |