Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias

Claim 2

A magnetic tunnel junction device for connection to sense circuitry for detecting changes in electrical resistance within the device, the device comprising: a substrate; a first electrically conductive lead formed on the substrate; a magnetic tunnel junction stack formed on the first lead and comprising a fixed ferromagnetic layer having its magnetic moment fixed in the absence of an applied magnetic field, an insulating tunnel barrier layer in contact with the fixed ferromagnetic layer, and a sensing ferromagnetic layer in contact with the insulating tunnel barrier layer, the sensing ferromagnetic layer having a generally rectangular shape with a long back edge and two shorter opposite side edges; a second electrically conductive lead formed on and in contact with the magnetic tunnel junction stack; a biasing ferromagnetic layer for biasing the magnetic moment of the sensing ferromagnetic layer in a preferred direction in the absence of an applied magnetic field, the biasing ferromagnetic layer being formed on the substrate around said back and side edges of the sensing ferromagnetic layer and spaced from said back and side edges and having two side portions located near respective side edges of the sensing ferromagnetic layer and a back portion located near said back edge of the sensing ferromagnetic layer, said side portions having a magnetic moment oriented in a different direction from the magnetic moment of said back portion; an electrically insulating layer separating the two biasing ferromagnetic layer side portions from contact with the biasing ferromagnetic layer back portion and said two side portions and said back portion from contact with the sensing ferromagnetic layer; whereby when the electrical leads are connected to the sense circuitry the electrical resistance to current flow perpendicularly through the layers in said stack is determined by the relative orientation of the magnetic moments of the fixed and sensing ferromagnetic layers, and sense current is prevented from shunting to said biasing ferromagnetic layer.

Claim 3

The device according to claim 1 wherein the back portion of the biasing ferromagnetic layer has a magnetic moment within its plane that is oriented between greater than -90 degrees and less than +90 degrees, where 0 degrees corresponds to a longitudinal direction generally parallel to the back edge of the generally rectangularly shaped sensing ferromagnetic layer and in the direction of the magnetic moment of the sensing layer in the absence of an applied magnetic field.

Claim 4

The device according to claim 1 wherein the magnetic moments of the fixed and sensing ferromagnetic layers are oriented generally orthogonal to one another in the absence of an applied magnetic field.

Claim 5

The device according to claim 1 wherein the insulating layer also electrically insulates the biasing ferromagnetic layer from at least one of said leads.

Claim 6

The device according to claim 1 wherein the first electrical lead is the bottom lead, the magnetic tunnel junction stack is formed on the substrate such that the fixed ferromagnetic layer is in electrical connection with the first electrical lead, and the second electrical lead is the top lead and is in electrical contact with the sensing ferromagnetic layer.

Claim 7

The device according to claim 1 wherein the first electrical lead is the bottom lead, the magnetic tunnel junction stack is formed on the substrate such that the sensing ferromagnetic layer is in electrical connection with the first electrical lead, and the second electrical lead is the top lead and is in electrical contact with the fixed ferromagnetic layer.

Claim 8

The device according to claim 1 wherein all of the layers in said stack have generally the same rectangular shape with contiguous side edges.

Claim 9

The device according to claim 1 wherein the magnetic tunnel junction stack further comprises an antiferromagnetic layer in contact with the fixed ferromagnetic layer for fixing the magnetic moment of the fixed ferromagnetic layer in said preferred direction by interfacial exchange coupling.

Claim 10

The device according to claim 1 wherein the biasing ferromagnetic layer is formed of an alloy comprising Co, Pt and Cr.

Claim 11

The device according to claim 1 wherein the biasing ferromagnetic layer comprises a ferromagnetic film and an antiferromagnetic film in contact with and interfacially exchange coupled with the ferromagnetic film.

Claim 12

The device according to claim 10 wherein the ferromagnetic film comprises an alloy of Ni and Fe, and wherein the antiferromagnetic film comprises an alloy of Ni and Mn.

Claim 13

A magnetic tunnel junction magnetoresistive read head for sensing data magnetically recorded on a medium, the head having a sensing surface for facing the medium and comprising: a substrate; a fixed ferromagnetic layer formed over the substrate, the magnetization direction of the fixed ferromagnetic layer being fixed along a direction generally perpendicular to the sensing surface so as to be substantially prevented from rotation in the presence of an applied magnetic field from the medium; an insulating tunneling barrier layer located on and in contact with the fixed ferromagnetic layer; a sensing ferromagnetic layer located on and in contact with the tunneling barrier layer and whose magnetization is oriented in a preferred direction generally parallel to the sensing surface and generally perpendicular to the magnetization direction of the fixed ferromagnetic layer in the absence of an applied magnetic field and is free to rotate in the presence of an applied magnetic field from the medium, the sensing ferromagnetic layer having a generally rectangular shape with a long sensing edge parallel to the sensing surface, a long back edge parallel to the sensing edge and two shorter opposite side edges; a biasing ferromagnetic layer formed on the substrate around said back and side edges of the sensing ferromagnetic layer and spaced from said back and side edges for biasing the magnetization direction of the sensing ferromagnetic layer in said preferred direction in the absence of an applied magnetic field, the biasing ferromagnetic layer having two side portions located near respective side edges of the sensing ferromagnetic layer and a back portion located near said back edge of the sensing ferromagnetic layer, said side portions having a magnetic moment oriented in a different direction from the magnetic moment of said back portion; an electrically insulating layer separating the two biasing ferromagnetic layer side portions from contact with the biasing ferromagnetic layer back portion and said two side portions and said back portion from contact with the sensing ferromagnetic layer; and a pair of electrical leads, each lead being connected to a respective one of the fixed and sensing layers and electrically isolated from the biasing layer by the insulating layer, whereby when a sense current is passed between the leads it passes generally perpendicularly through the insulating tunneling barrier layer without passing into the biasing layer.

Claim 14

A magnetic tunnel junction magnetoresistive read head for sensing data magnetically recorded on a medium, the head having a sensing surface for facing the medium and comprising: a substrate; a fixed ferromagnetic layer formed over the substrate, the magnetization direction of the fixed ferromagnetic layer being fixed along a direction generally perpendicular to the sensing surface so as to be substantially prevented from rotation in the presence of an applied magnetic field from the medium; an insulating tunneling barrier layer located on and in contact with the fixed ferromagnetic layer; a sensing ferromagnetic layer located on and in contact with the tunneling barrier layer and whose magnetization is oriented in a preferred direction generally parallel to the sensing surface and generally perpendicular to the magnetization direction of the fixed ferromagnetic layer in the absence of an applied magnetic field and is free to rotate in the presence of an applied magnetic field from the medium, the sensing ferromagnetic layer having a generally rectangular shape with a long sensing edge parallel to the sensing surface, a long back edge parallel to the sensing edge and two shorter opposite side edges; a biasing ferromagnetic layer formed on the substrate around said back and side edges of the sensing ferromagnetic layer and spaced from said back and side edges for biasing the magnetization direction of the sensing ferromagnetic layer in said preferred direction in the absence of an applied magnetic field, the biasing ferromagnetic layer having two side portions located near respective side edges of the sensing ferromagnetic layer and a back portion located near said back edge of the sensing ferromagnetic layer, said side portions having a magnetic moment oriented in a different direction from the magnetic moment of said back portion; an electrically insulating layer separating the two biasing ferromagnetic layer side portions from contact with the biasing ferromagnetic layer back portion and said two side portions and said back portion from contact with the sensing ferromagnetic layer; and a pair of electrical leads, each lead being connected to a respective one of the fixed and sensing layers and electrically isolated from the biasing layer by the insulating layer, whereby when a sense current is passed between the leads it passes generally perpendicularly through the insulating tunneling barrier layer without passing into the biasing layer.

Claim 15

The head according to claim 12 further comprising an antiferromagnetic layer in contact with the fixed ferromagnetic layer for fixing the magnetization direction of the fixed ferromagnetic layer by interfacial exchange coupling.

Claim 16

The head according to claim 12 wherein a first one of the electrical leads is formed on the substrate and wherein the antiferromagnetic layer is formed on the substrate and located between the substrate and the fixed ferromagnetic layer, the fixed ferromagnetic layer being formed on and in contact with the antiferromagnetic layer, whereby the magnetization direction of the fixed ferromagnetic layer is fixed by interfacial exchange coupling with the antiferromagnetic layer.

Claim 17

The head according to claim 12 wherein a first one of the electrical leads is formed on the substrate and wherein the sensing layer is located between the first lead and the insulating tunneling barrier layer.

Claim 18

The head according to claim 12 wherein the fixed ferromagnetic layer, the tunneling barrier layer, and the sensing ferromagnetic layer are formed as a stack of layers with the fixed ferromagnetic layer and the tunneling barrier layer having edges generally coplanar with the rectangular edges of the sensing ferromagnetic layer, and wherein the insulating layer electrically insulates said stack from the biasing ferromagnetic layer and said electrical leads.

Claim 19

The head according to claim 12 wherein the back portion of the biasing ferromagnetic layer has a magnetization direction within its plane that is oriented between greater than -90 degrees and less than +90 degrees, where 0 degrees corresponds to a longitudinal direction generally parallel to the back edge of the generally rectangularly shaped sensing ferromagnetic layer and in the direction of the magnetization of the sensing layer in the absence of an applied magnetic field.

Claim 20

The head according to claim 12 wherein the biasing ferromagnetic layer is formed of an alloy comprising Co, Pt and Cr.

Claim 21

The head according to claim 12 wherein the biasing ferromagnetic layer comprises a ferromagnetic film and an antiferromagnetic film in contact with and interfacially exchange coupled with the ferromagnetic film.

Claim 22

The head according to claim 11 wherein the ferromagnetic film comprises an alloy of Ni and Fe, and wherein the antiferromagnetic film comprises an alloy of Ni and Mn.