US5528440A
Expired / Lapsed
US
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Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element
Assignee: International Business Machines Corp
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Filing: 1994-07-26
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Granted: 1996-06-18
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Expires: 2014-07-26
Abstract
Abstract An improved spin valve (SV) magnetoresistive element has its free ferromagnetic layer in the form of a central active region with defined edges and end regions that are contiguous with and abut the edges of the central active region. A layer of antiferromagnetic material, preferably a nickel-manganese (Ni--Mn) alloy, is formed on and in contact with the ferromagnetic material in the end regions for exchange coupling with the end regions to provide them with a longitudinal bias of their magnetizations. The pinned ferromagnetic layer in the SV element is pinned by exchange coupling with a different layer of antiferromagnetic material, preferably an iron-manganese (Fe--Mn) alloy. This material has a substantially different Neel temperature from that of the antiferromagnetic material on the end regions. The process for making the SV element includes heating to different predetermined temperatures in the presence of an applied magnetic field to orient the magnetizations of the free and pinned layers in the proper direction. The SV element may be used as a sensor for reading data in magnetic recording systems.
Inventors
- 👤 Robert E. Fontana
- 👤 Tsann Lin
- 👤 Ching H. Tsang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:33
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; B; B82; B82Y; B82Y25/00; G11B5/3903; G11C; G11C11/00; G11C11/02; G11C11/14; G11C11/15; H; H10; H10N; H10N50/00; H10N50/80; H10N50/85
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
249 words
A spin valve magnetoresistive element comprising: a substrate; a central active layered structure formed on the substrate and comprising: a free layer of central active region ferromagnetic material having a magnetization orientation in the absence of an applied magnetic field, a metallic nonmagnetic spacer layer adjacent to and in physical contact with the free ferromagnetic layer central active region, a pinned ferromagnetic layer adjacent to and in physical contact with the spacer layer and having a magnetization oriented at an angle to the magnetization of the free ferromagnetic layer central active region, and a layer of a first type of antiferromagnetic material formed adjacent to and in physical contact with the pinned ferromagnetic layer for pinning the magnetization of the pinned ferromagnetic layer, the free layer central active region, spacer layer, pinned layer and first antiferromagnetic material layer having substantially the same width and common side edges; and a longitudinal biasing end region layered structure formed on the substrate abutting and in physical contact with the side edges of the central active layered structure and comprising: a layer of end region ferromagnetic material abutting and in physical contact with the side edges of the free layer central active region and a layer of a second type of antiferromagnetic material having a composition different from the composition of said first type of antiferromagnetic material and being formed on and in physical contact with said end region ferromagnetic layer for longitudinally exchange biasing the magnetization in the end region ferromagnetic layer.
Claim 2
Dependent Claim
249 words
A spin valve magnetoresistive element comprising: a substrate; a central active layered structure formed on the substrate and comprising: a free layer of central active region ferromagnetic material having a magnetization orientation in the absence of an applied magnetic field, a metallic nonmagnetic spacer layer adjacent to and in physical contact with the free ferromagnetic layer central active region, a pinned ferromagnetic layer adjacent to and in physical contact with the spacer layer and having a magnetization oriented at an angle to the magnetization of the free ferromagnetic layer central active region, and a layer of a first type of antiferromagnetic material formed adjacent to and in physical contact with the pinned ferromagnetic layer for pinning the magnetization of the pinned ferromagnetic layer, the free layer central active region, spacer layer, pinned layer and first antiferromagnetic material layer having substantially the same width and common side edges; and a longitudinal biasing end region layered structure formed on the substrate abutting and in physical contact with the side edges of the central active layered structure and comprising: a layer of end region ferromagnetic material abutting and in physical contact with the side edges of the free layer central active region and a layer of a second type of antiferromagnetic material having a composition different from the composition of said first type of antiferromagnetic material and being formed on and in physical contact with said end region ferromagnetic layer for longitudinally exchange biasing the magnetization in the end region ferromagnetic layer.
Claim 3
Dependent Claim
23 words
A spin valve magnetoresistive element as in claim 1 wherein the second antiferromagnetic material is formed of an alloy comprising nickel and manganese.
Claim 4
Dependent Claim
23 words
A spin valve magnetoresistive element as in claim 2 wherein the first antiferromagnetic material is formed of an alloy comprising iron and manganese.
Claim 5
Dependent Claim
31 words
A spin valve magnetoresistive element as in claim 1 wherein the second antiferromagnetic material abuts and is in physical contact with the side edges of the free layer central active region.
Claim 6
Dependent Claim
37 words
A spin valve magnetoresistive element as in claim 1 wherein the ferromagnetic material in the free layer central active region has a composition different from the composition of the ferromagnetic material in the end region ferromagnetic layer.
Claim 7
Dependent Claim
330 words
A magnetic storage system comprising: a magnetic storage medium having a plurality of tracks for the recording of data; a magnetic transducer maintained close to the magnetic storage medium during relative motion between the magnetic transducer and the magnetic storage medium, the magnetic transducer including a spin valve magnetoresistive sensor comprising (a) a substrate; (b) central active layered structure formed on the substrate and comprising a free layer of central active region ferromagnetic material having a magnetization orientation in the absence of an applied magnetic field, a metallic nonmagnetic spacer layer adjacent to and in physical contact with the free ferromagnetic layer central active region, a pinned ferromagnetic layer adjacent to and in physical contact with the spacer layer and having a magnetization oriented at an angle to the magnetization of the free ferromagnetic layer central active region, and a layer of a first type of antiferromagnetic material formed adjacent to and in physical contact with the pinned ferromagnetic layer for pinning the magnetization of the pinned ferromagnetic layer, the free layer central active region, spacer layer, pinned layer and first antiferromagnetic material layer having substantially the same width and common side edges; and (c) a longitudinal biasing end region layered structure formed on the substrate abutting and in physical contact with the side edges of the central active layered structure and comprising a layer of end region ferromagnetic material abutting and in physical contact with the side edges of the free layer central active region and a layer of a second type of antiferromagnetic material having a composition different from the composition of said first type of antiferromagnetic material and being formed on and in physical contact with said end region ferromagnetic layer for longitudinally exchange biasing the magnetization in the end region ferromagnetic layer; and means coupled to the magnetoresistive sensor for detecting resistance changes in the magnetoresistive sensor responsive to magnetic fields representative of data bits recorded in the magnetic storage medium intercepted by the magnetoresistive sensor.
Claim 8
Dependent Claim
330 words
A magnetic storage system comprising: a magnetic storage medium having a plurality of tracks for the recording of data; a magnetic transducer maintained close to the magnetic storage medium during relative motion between the magnetic transducer and the magnetic storage medium, the magnetic transducer including a spin valve magnetoresistive sensor comprising (a) a substrate; (b) central active layered structure formed on the substrate and comprising a free layer of central active region ferromagnetic material having a magnetization orientation in the absence of an applied magnetic field, a metallic nonmagnetic spacer layer adjacent to and in physical contact with the free ferromagnetic layer central active region, a pinned ferromagnetic layer adjacent to and in physical contact with the spacer layer and having a magnetization oriented at an angle to the magnetization of the free ferromagnetic layer central active region, and a layer of a first type of antiferromagnetic material formed adjacent to and in physical contact with the pinned ferromagnetic layer for pinning the magnetization of the pinned ferromagnetic layer, the free layer central active region, spacer layer, pinned layer and first antiferromagnetic material layer having substantially the same width and common side edges; and (c) a longitudinal biasing end region layered structure formed on the substrate abutting and in physical contact with the side edges of the central active layered structure and comprising a layer of end region ferromagnetic material abutting and in physical contact with the side edges of the free layer central active region and a layer of a second type of antiferromagnetic material having a composition different from the composition of said first type of antiferromagnetic material and being formed on and in physical contact with said end region ferromagnetic layer for longitudinally exchange biasing the magnetization in the end region ferromagnetic layer; and means coupled to the magnetoresistive sensor for detecting resistance changes in the magnetoresistive sensor responsive to magnetic fields representative of data bits recorded in the magnetic storage medium intercepted by the magnetoresistive sensor.
Claim 9
Dependent Claim
20 words
A system as in claim 6 wherein the second antiferromagnetic material is formed of an alloy comprising nickel and manganese.
Claim 10
Dependent Claim
28 words
A system as in claim 6 wherein the second antiferromagnetic material abuts and is in physical contact with the side edges of the free layer central active region.
Claim 11
Dependent Claim
32 words
A system as in claim 6 wherein the composition of the ferromagnetic material in the central active region is different from the composition of the ferromagnetic material in the end ferromagnetic layer.
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