Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment

Claim 2

A magnetic tunnel junction device for connection to electrical circuitry that detects a change in electrical resistance of the device in the presence of an applied magnetic field, the device comprising: a multilayer of two ferromagnetic layers, the multilayer comprising a first ferromagnetic layer having a coercivity substantially higher than applied magnetic fields in the range of interest of the device and an interface ferromagnetic layer formed on and in contact with the first ferromagnetic layer, the interface layer having a magnetization substantially higher than the magnetization of the first ferromagnetic layer and being sufficiently thin relative to the thickness of the first ferromagnetic layer so that the multilayer does not have a coercivity substantially less than the coercivity of the first ferromagnetic layer, whereby the multilayer has a magnetic moment that is fixed in a preferred direction in the presence of an applied magnetic field in the range of interest; a free ferromagnetic layer whose magnetic moment is free to rotate in the presence of an applied magnetic field in the range of interest; an insulating tunneling layer located between and in contact with the interface ferromagnetic layer in said multilayer and the free ferromagnetic layer for permitting tunneling current in a direction generally perpendicular to the multilayer and free ferromagnetic layers; and a substrate, wherein the multilayer, tunneling layer and free ferromagnetic layer are formed on the substrate.

Claim 3

The magnetic tunnel junction device according to claim 1 wherein the magnetic moments of the multilayer and the free ferromagnetic layer are substantially parallel or antiparallel to one another in the absence of an applied magnetic field.

Claim 4

The magnetic tunnel junction device according to claim 1 wherein the free ferromagnetic layer's magnetic moment is substantially perpendicular to the multilayer's magnetic moment in the absence of an applied magnetic field.

Claim 5

The magnetic tunnel junction device according to claim 1 wherein the multilayer is located between the substrate and the insulating tunneling layer.

Claim 6

The magnetic tunnel junction device according to claim 1 wherein the free ferromagnetic layer is located between the substrate and the insulating tunneling layer.

Claim 7

The magnetic tunnel junction device according to claim 1 wherein the material of the free ferromagnetic layer is selected from the group consisting of Co, alloys of Co, and alloys of Ni--Fe.

Claim 8

The magnetic tunnel junction device according to claim 1 wherein the material of the first ferromagnetic layer in the multilayer comprises an alloy of Co and one or more of Cr, Pt, Pd, Ni, Ta, Sm, Re, Ru, and B.

Claim 9

The magnetic tunnel junction device according to claim 1 wherein the material of the first ferromagnetic layer in the multilayer is an alloy comprising Co, Pt, and Cr, and further comprising an underlayer on which the Co--Pt--Cr alloy is formed, the underlayer being formed of a material selected from the group consisting of Cr, Cr--V alloys, Ta, Ti--W alloys, Ta--W alloys, W and Mo.

Claim 10

The magnetic tunnel junction device according to claim 1 wherein the material of the interface ferromagnetic layer is Co.

Claim 11

The magnetic tunnel junction device according to claim 9 wherein the Co interface ferromagnetic layer has a thickness in the range of approximately 0.8 to 2.0 nanometers.

Claim 12

A magnetic tunnel junction memory cell having two magnetic states and usable in a magnetic memory array of memory cells, the array being connected to read/write circuitry for altering and detecting the magnetic state of individual memory cells in the array, the memory cell comprising: a fixed ferromagnetic multilayer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field caused by current from the read/write circuitry, the fixed multilayer comprising a first ferromagnetic layer having a coercivity substantially higher than said applied magnetic field and an interface ferromagnetic layer formed on and in contact with the first ferromagnetic layer, the interface layer having a magnetization substantially higher than the magnetization of the first ferromagnetic layer and being sufficiently thin relative to the thickness of the first ferromagnetic layer so that the multilayer does not have a coercivity substantially less than the coercivity of the first ferromagnetic layer, whereby the fixed multilayer's magnetic moment remains fixed in said preferred direction in the presence of said applied magnetic field; a free ferromagnetic layer whose magnetic moment is free to rotate between directions generally parallel and antiparallel to the magnetic moment of the fixed multilayer when exposed to said applied magnetic field; an insulating tunnel barrier layer located between and in contact with the interface ferromagnetic layer in said multilayer and the free ferromagnetic layer for permitting tunneling current in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer; and a substrate, wherein the fixed multilayer, tunneling layer and free ferromagnetic layer are formed on the substrate; whereby when the fixed multilayer and the free ferromagnetic layer are connected to the read/write circuitry, the electrical resistance to current flow through the insulating tunnel barrier layer in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer is determined by said parallel or antiparallel magnetic moment of said free ferromagnetic layer, the value of said electrical resistance thereby allowing the magnetic state of the memory cell to be determined.

Claim 13

A magnetic tunnel junction memory cell having two magnetic states and usable in a magnetic memory array of memory cells, the array being connected to read/write circuitry for altering and detecting the magnetic state of individual memory cells in the array, the memory cell comprising: a fixed ferromagnetic multilayer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field caused by current from the read/write circuitry, the fixed multilayer comprising a first ferromagnetic layer having a coercivity substantially higher than said applied magnetic field and an interface ferromagnetic layer formed on and in contact with the first ferromagnetic layer, the interface layer having a magnetization substantially higher than the magnetization of the first ferromagnetic layer and being sufficiently thin relative to the thickness of the first ferromagnetic layer so that the multilayer does not have a coercivity substantially less than the coercivity of the first ferromagnetic layer, whereby the fixed multilayer's magnetic moment remains fixed in said preferred direction in the presence of said applied magnetic field; a free ferromagnetic layer whose magnetic moment is free to rotate between directions generally parallel and antiparallel to the magnetic moment of the fixed multilayer when exposed to said applied magnetic field; an insulating tunnel barrier layer located between and in contact with the interface ferromagnetic layer in said multilayer and the free ferromagnetic layer for permitting tunneling current in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer; and a substrate, wherein the fixed multilayer, tunneling layer and free ferromagnetic layer are formed on the substrate; whereby when the fixed multilayer and the free ferromagnetic layer are connected to the read/write circuitry, the electrical resistance to current flow through the insulating tunnel barrier layer in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer is determined by said parallel or antiparallel magnetic moment of said free ferromagnetic layer, the value of said electrical resistance thereby allowing the magnetic state of the memory cell to be determined.

Claim 14

The magnetic tunnel junction memory cell according to claim 11 wherein the multilayer is located between the substrate and the insulating tunnel barrier layer.

Claim 15

The magnetic tunnel junction memory cell according to claim 11 wherein the free ferromagnetic layer is located between the substrate and the insulating tunnel barrier layer.

Claim 16

The magnetic tunnel junction memory cell according to claim 11 wherein the material of the free ferromagnetic layer is selected from the group consisting of Co, alloys of Co, and alloys of Ni--Fe.

Claim 17

The magnetic tunnel junction memory cell according to claim 11 wherein the material of the first ferromagnetic layer in the multilayer comprises an alloy of Co and one or more of Cr, Pt, Pd, Ni, Ta, Sm, Re, Ru, and B.

Claim 18

The magnetic tunnel junction memory cell according to claim 11 wherein the material of the first ferromagnetic layer in the multilayer is an alloy comprising Co, Pt, and Cr, and further comprising an underlayer on which the Co--Pt--Cr alloy is formed, the underlayer being formed of a material selected from the group consisting of Cr, Cr--V alloys, Ta, Ti--W alloys, Ta--W alloys, W and Mo.

Claim 19

The magnetic tunnel junction memory cell according to claim 11 wherein the material of the interface ferromagnetic layer is Co.

Claim 20

The magnetic tunnel junction memory cell according to claim 17 wherein the Co interface ferromagnetic layer has a thickness in the range of approximately 0.8 to 2.0 nanometers.

Claim 21

A magnetic tunnel junction memory cell having two magnetic states and usable in a magnetic memory array of memory cells, the array being connected to read/write circuitry for altering and detecting the magnetic state of individual memory cells in the array, the memory cell comprising: a substrate; a fixed ferromagnetic multilayer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field caused by current from the read/write circuitry, the fixed multilayer comprising a ferromagnetic layer of an alloy comprising Co, Pt, and Cr formed on the substrate and having a coercivity substantially higher than said applied magnetic field and an interface ferromagnetic layer consisting essentially of Co formed on and in contact with the Co--Pt--Cr layer, the interface Co layer having a magnetization substantially higher than the magnetization of the Co--Pt--Cr layer and being sufficiently thin relative to the thickness of the Co--Pt--Cr layer so that the multilayer does not have a coercivity substantially less than the coercivity of the Co--Pt--Cr layer, whereby the fixed multilayer's magnetic moment remains fixed in said preferred direction in the presence of said applied magnetic field; a free ferromagnetic layer whose magnetic moment is free to rotate between directions generally parallel and antiparallel to the magnetic moment of the fixed multilayer when exposed to said applied magnetic field; an insulating tunnel barrier layer located between and in contact with the interface Co layer in said multilayer and the free ferromagnetic layer for permitting tunneling current in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer; whereby when the fixed multilayer and the free ferromagnetic layer are connected to the read/write circuitry, the electrical resistance to current flow through the insulating tunnel barrier layer in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer is determined by said parallel or antiparallel magnetic moment of said free ferromagnetic layer, the value of said electrical resistance thereby allowing the magnetic state of the memory cell to be determined.

Claim 22

A magnetic tunnel junction memory cell having two magnetic states and usable in a magnetic memory array of memory cells, the array being connected to read/write circuitry for altering and detecting the magnetic state of individual memory cells in the array, the memory cell comprising: a substrate; a fixed ferromagnetic multilayer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field caused by current from the read/write circuitry, the fixed multilayer comprising a ferromagnetic layer of an alloy comprising Co, Pt, and Cr formed on the substrate and having a coercivity substantially higher than said applied magnetic field and an interface ferromagnetic layer consisting essentially of Co formed on and in contact with the Co--Pt--Cr layer, the interface Co layer having a magnetization substantially higher than the magnetization of the Co--Pt--Cr layer and being sufficiently thin relative to the thickness of the Co--Pt--Cr layer so that the multilayer does not have a coercivity substantially less than the coercivity of the Co--Pt--Cr layer, whereby the fixed multilayer's magnetic moment remains fixed in said preferred direction in the presence of said applied magnetic field; a free ferromagnetic layer whose magnetic moment is free to rotate between directions generally parallel and antiparallel to the magnetic moment of the fixed multilayer when exposed to said applied magnetic field; an insulating tunnel barrier layer located between and in contact with the interface Co layer in said multilayer and the free ferromagnetic layer for permitting tunneling current in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer; whereby when the fixed multilayer and the free ferromagnetic layer are connected to the read/write circuitry, the electrical resistance to current flow through the insulating tunnel barrier layer in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer is determined by said parallel or antiparallel magnetic moment of said free ferromagnetic layer, the value of said electrical resistance thereby allowing the magnetic state of the memory cell to be determined.

Claim 23

The magnetic tunnel junction memory cell according to claim 19 wherein the material of the free ferromagnetic layer is selected from the group consisting of Co, alloys of Co, and alloys of Ni--Fe.

Claim 24

The magnetic tunnel junction memory cell according to claim 19 further comprising an underlayer on which the Co--Pt--Cr alloy is formed, the underlayer being formed of a material selected from the group consisting of Cr, Cr--V alloys, Ta, Ti--W alloys, Ta--W alloys, W and Mo.

Claim 25

The magnetic tunnel junction memory cell according to claim 19 wherein the Co interface ferromagnetic layer has a thickness in the range of approximately 0.8 to 2.0 nanometers.

Claim 26

A magnetic tunnel junction magnetic field sensor for detecting external magnetic fields, the sensor comprising: a fixed ferromagnetic multilayer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field in the range of the external magnetic field to be sensed, the fixed multilayer comprising a first ferromagnetic layer having a coercivity substantially higher than said applied magnetic field and an interface ferromagnetic layer formed on and in contact with the first ferromagnetic layer, the interface layer having a magnetization substantially higher than the magnetization of the first ferromagnetic layer and being sufficiently thin relative to the thickness of the first ferromagnetic layer so that the multilayer does not have a coercivity substantially less than the coercivity of the first ferromagnetic layer, whereby the fixed multilayer's magnetic moment remains fixed in said preferred direction in the presence of said applied magnetic field; a free ferromagnetic layer whose magnetic moment is oriented generally perpendicular to the moment of the fixed multilayer in the absence of an applied magnetic field and is free to rotate away from said perpendicular orientation in the presence of an applied magnetic field in the range of the external magnetic field to be sensed; an insulating tunnel barrier layer located between and in contact with the interface layer and the free ferromagnetic layer for permitting tunneling current in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer; and a substrate, wherein the fixed multilayer, tunneling barrier layer and free ferromagnetic layer are formed on the substrate; whereby when the fixed multilayer and the free ferromagnetic layer are exposed to the external magnetic field to be sensed, the moment of the free ferromagnetic layer will change its orientation relative to the moment of the fixed multilayer and the electrical resistance to current flow through the insulating tunnel barrier layer in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer will be altered, thereby allowing the external magnetic field to be detected.

Claim 27

A magnetic tunnel junction magnetic field sensor for detecting external magnetic fields, the sensor comprising: a fixed ferromagnetic multilayer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field in the range of the external magnetic field to be sensed, the fixed multilayer comprising a first ferromagnetic layer having a coercivity substantially higher than said applied magnetic field and an interface ferromagnetic layer formed on and in contact with the first ferromagnetic layer, the interface layer having a magnetization substantially higher than the magnetization of the first ferromagnetic layer and being sufficiently thin relative to the thickness of the first ferromagnetic layer so that the multilayer does not have a coercivity substantially less than the coercivity of the first ferromagnetic layer, whereby the fixed multilayer's magnetic moment remains fixed in said preferred direction in the presence of said applied magnetic field; a free ferromagnetic layer whose magnetic moment is oriented generally perpendicular to the moment of the fixed multilayer in the absence of an applied magnetic field and is free to rotate away from said perpendicular orientation in the presence of an applied magnetic field in the range of the external magnetic field to be sensed; an insulating tunnel barrier layer located between and in contact with the interface layer and the free ferromagnetic layer for permitting tunneling current in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer; and a substrate, wherein the fixed multilayer, tunneling barrier layer and free ferromagnetic layer are formed on the substrate; whereby when the fixed multilayer and the free ferromagnetic layer are exposed to the external magnetic field to be sensed, the moment of the free ferromagnetic layer will change its orientation relative to the moment of the fixed multilayer and the electrical resistance to current flow through the insulating tunnel barrier layer in a direction generally perpendicular to the fixed multilayer and the free ferromagnetic layer will be altered, thereby allowing the external magnetic field to be detected.

Claim 28

The magnetic tunnel junction magnetic field sensor according to claim 23 wherein the multilayer is located between the substrate and the insulating tunnel barrier layer.

Claim 29

The magnetic tunnel junction magnetic field sensor according to claim 23 wherein the free ferromagnetic layer is located between the substrate and the insulating tunnel barrier layer.

Claim 30

The magnetic tunnel junction magnetic field sensor according to claim 23 wherein the material of the free ferromagnetic layer is selected from the group consisting of Co, alloys of Co, and alloys of Ni--Fe.

Claim 31

The magnetic tunnel junction magnetic field sensor according to claim 23 wherein the material of the first ferromagnetic layer in the multilayer comprises an alloy of Co and one or more of Cr, Pt, Pd, Ni, Ta, Sm, Re, Ru, and B.

Claim 32

The magnetic tunnel junction magnetic field sensor according to claim 23 wherein the material of the first ferromagnetic layer in the multilayer is an alloy comprising Co, Pt, and Cr, and further comprising an underlayer on which the Co--Pt--Cr alloy is formed, the underlayer being formed of a material selected from the group consisting of Cr, Cr--V alloys, Ta, Ta--W alloys, W and Mo.

Claim 33

The magnetic tunnel junction magnetic field sensor according to claim 23 wherein the material of the interface ferromagnetic layer is Co.

Claim 34

The magnetic tunnel junction magnetic field sensor according to claim 29 wherein the Co interface ferromagnetic layer has a thickness in the range of approximately 0.8 to 2.0 nanometers.