US6005274A
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Semiconductor device with a multi-level gate structure and a gate dielectric composed of barium zirconium titanate material
Assignee: Advanced Micro Devices Inc
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Filing: 1998-09-30
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Granted: 1999-12-21
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Expires: 2018-09-30
Abstract
Abstract The present invention is directed to a new semiconductor device and a method for making same. The semiconductor device is comprised of a gate dielectric layer, a conductor layer, and a metal oxide layer positioned between the gate dielectric layer and the conductor layer. The method comprises forming a gate dielectric layer, a conductor layer, and a metal oxide layer between the gate dielectric layer and the conductor layer.
Inventors
- 👤 Mark I. Gardner
- 👤 Mark C. Gilmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:52
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/01304; H10D64/01316; H10D64/01338; H10D64/01344; H10D64/0135; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
56 words
A semiconductor device, comprising: a substrate, said substrate having a surface; a gate dielectric layer comprised of barium zirconium titanate positioned above said surface of said substrate; a conductor layer positioned above said gate dielectric layer; a metal oxide layer positioned between said gate dielectric layer and said conductor layer; and at least one source/drain region.
Claim 2
Dependent Claim
56 words
A semiconductor device, comprising: a substrate, said substrate having a surface; a gate dielectric layer comprised of barium zirconium titanate positioned above said surface of said substrate; a conductor layer positioned above said gate dielectric layer; a metal oxide layer positioned between said gate dielectric layer and said conductor layer; and at least one source/drain region.
Claim 3
Dependent Claim
24 words
The semiconductor device of claim 1, further comprising a gate barrier layer positioned between said gate dielectric layer and said surface of said substrate.
Claim 4
Dependent Claim
23 words
The semiconductor device of claim 2, wherein said gate barrier layer is selected from one of the group of silicon nitride or oxynitride.
Claim 5
Dependent Claim
26 words
The semiconductor device of claim 1, further comprising a plurality of sidewall spacers formed adjacent at least said gate dielectric layer and said metal oxide layer.
Claim 6
Dependent Claim
23 words
The semiconductor device of claim 4, wherein said side wall spacers are selected from one of the group of silicon nitride or oxynitride.
Claim 7
Dependent Claim
16 words
The semiconductor device of claim 1, wherein said metal oxide layer is comprised of tungsten trioxide.
Claim 8
Dependent Claim
14 words
The semiconductor device of claim 1, wherein said conductor layer is comprised of tungsten.
Claim 9
Dependent Claim
26 words
The semiconductor device of claim 1, wherein said metal oxide layer and said gate dielectric layer are dielectrically equivalent to approximately 6-15 Å of silicon dioxide.
Claim 10
Dependent Claim
19 words
The semiconductor device of claim 1, wherein said metal oxide layer has a dielectric constant ranging from approximately 450-550.
Claim 11
Dependent Claim
19 words
The semiconductor device of claim 1, wherein said gate dielectric layer has a dielectric constant ranging from approximately 25-500.
Claim 12
Dependent Claim
58 words
The semiconductor device of claim 1, wherein: said gate dielectric layer is comprised of barium zirconium titanate and has a thickness ranging from 25-2000 Å; said conductor layer is comprised of tungsten and has a thickness ranging from 1500-2500 Å; and said metal oxide layer is comprised of tungsten trioxide and has a thickness ranging from 100-300 Å.
Claim 13
Dependent Claim
68 words
A semiconductor device comprising: a substrate, said substrate having a surface; a gate dielectric layer comprised of barium zirconium titanate positioned above said surface of said substrate; a conductor layer positioned above said gate dielectric layer; a metal oxide layer positioned between said gate dielectric layer and said conductor layer, said metal oxide layer having a dielectric constant ranging from approximately 450-550; and at least one source/drain region.
Claim 14
Dependent Claim
68 words
A semiconductor device comprising: a substrate, said substrate having a surface; a gate dielectric layer comprised of barium zirconium titanate positioned above said surface of said substrate; a conductor layer positioned above said gate dielectric layer; a metal oxide layer positioned between said gate dielectric layer and said conductor layer, said metal oxide layer having a dielectric constant ranging from approximately 450-550; and at least one source/drain region.
Claim 15
Dependent Claim
24 words
The semiconductor device of claim 12, further comprising a gate barrier layer positioned between said gate dielectric layer and said surface of said substrate.
Claim 16
Dependent Claim
26 words
The semiconductor device of claim 12, further comprising a plurality of sidewall spacers formed adjacent at least said gate dielectric layer and said metal oxide layer.
Claim 17
Dependent Claim
26 words
The semiconductor device of claim 12, wherein said metal oxide layer and said gate dielectric layer are dielectrically equivalent to approximately 6-15 Å of silicon dioxide.
Claim 18
Dependent Claim
19 words
The semiconductor device of claim 12, wherein said gate dielectric layer has a dielectric constant ranging from approximately 25-500.
Claim 19
Dependent Claim
16 words
The semiconductor device of claim 12, wherein said metal oxide layer is comprised of tungsten trioxide.
Claim 20
Dependent Claim
14 words
The semiconductor device of claim 12, wherein said conductor layer is comprised of tungsten.
Claim 21
Dependent Claim
80 words
A semiconductor device, comprising: a substrate, said substrate having a surface; a gate dielectric layer comprised of barium zirconium titanate positioned above said surface of said substrate, said gate dielectric layer having a dielectric constant ranging from approximately 25-500; a conductor layer positioned above said gate dielectric layer; a metal oxide layer positioned between said gate dielectric layer and said conductor layer, said metal oxide layer having a dielectric constant ranging from approximately 450-550; and at least one source/drain region.
Claim 22
Dependent Claim
80 words
A semiconductor device, comprising: a substrate, said substrate having a surface; a gate dielectric layer comprised of barium zirconium titanate positioned above said surface of said substrate, said gate dielectric layer having a dielectric constant ranging from approximately 25-500; a conductor layer positioned above said gate dielectric layer; a metal oxide layer positioned between said gate dielectric layer and said conductor layer, said metal oxide layer having a dielectric constant ranging from approximately 450-550; and at least one source/drain region.
Claim 23
Dependent Claim
24 words
The semiconductor device of claim 19, further comprising a gate barrier layer positioned between said gate dielectric layer and said surface of said substrate.
Claim 24
Dependent Claim
26 words
The semiconductor device of claim 19, further comprising a plurality of sidewall spacers formed adjacent at least said gate dielectric layer and said metal oxide layer.
Claim 25
Dependent Claim
26 words
The semiconductor device of claim 19, wherein said metal oxide layer and said gate dielectric layer are dielectrically equivalent to approximately 6-15 Å of silicon dioxide.
Claim 26
Dependent Claim
16 words
The semiconductor device of claim 19, wherein said metal oxide layer is comprised of tungsten trioxide.
Claim 27
Dependent Claim
14 words
The semiconductor device of claim 19, wherein said conductor layer is comprised of tungsten.
Claim 28
Dependent Claim
60 words
A semiconductor device, comprising: a substrate, said substrate having a surface; a gate dielectric layer comprised of barium zirconium titanate positioned above said surface of said substrate; a conductor layer comprised of tungsten positioned above said gate dielectric layer; a layer of tungsten trioxide positioned between said gate dielectric layer and said conductor layer; and at least one source/drain region.
Claim 29
Dependent Claim
60 words
A semiconductor device, comprising: a substrate, said substrate having a surface; a gate dielectric layer comprised of barium zirconium titanate positioned above said surface of said substrate; a conductor layer comprised of tungsten positioned above said gate dielectric layer; a layer of tungsten trioxide positioned between said gate dielectric layer and said conductor layer; and at least one source/drain region.
Claim 30
Dependent Claim
24 words
The semiconductor device of claim 25, further comprising a gate barrier layer positioned between said gate dielectric layer and said surface of said substrate.
Claim 31
Dependent Claim
27 words
The semiconductor device of claim 25, further comprising a plurality of sidewall spacers formed adjacent at least said gate dielectric layer and said layer of tungsten trioxide.
Claim 32
Dependent Claim
27 words
The semiconductor device of claim 25, wherein said layer of tungsten trioxide and said gate dielectric layer are dielectrically equivalent to approximately 6-15 Å of silicon dioxide.
Claim 33
Dependent Claim
19 words
The semiconductor device of claim 25, wherein said gate dielectric layer has a dielectric constant ranging from approximately 25-500.
References Cited (Backward Citations)
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