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US6004845A
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Method for fabricating a crown-shaped capacitor
Assignee: United Microelectronics Corp
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Filing: 1998-07-07
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Granted: 1999-12-21
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Expires: 2018-07-07
Abstract
Abstract A method for fabricating crown-shaped a capacitor is provided. The method is comprised of the following steps. First, a dielectric layer is formed on a substrate having a pre-formed field effect transistor, then a contact hole which exposes one of the source/drain regions of the field effect transistor is defined and formed. Then a first conductive layer is formed in the contact hole and on the dielectric layer, a crown-shaped photoresist layer is formed by employing a mask comprising a transmission layer, a partial transmission layer, and a non-transmission layer. Next, the pattern on the photoresist layer is transferred onto the first conductive layer to form a crown-shaped conductive layer. Then, a dielectric film is formed on the top of the crown-shaped conductive layer, and a second conductive layer on the top of the dielectric film.
Inventors
- 👤 Benjamin Szu-Min Lin
- 👤 Der-Yuan Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:40
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
144 words
A method for fabricating a crown-shaped capacitor comprising the steps of: providing a substrate having a pre-formed field effect transistor, wherein the field effect transistor includes a gate and source/drain regions; forming a dielectric layer; defining the dielectric layer to form a contact hole, wherein the contact hole exposes one of the source/drain regions; forming a first conductive layer in the contact hole and on the dielectric layer; performing a photolithography operation to form a photoresist layer having a crown-shaped pattern on the first conductive layer, this is accomplished by employing a mask comprised of a transmission layer, a partial transmission layer, and a non-transmission layer; transferring the crown-shaped pattern of the photoresist layer onto the first conductive layer to form a crown-shaped conductive layer; forming a dielectric film on the crown-shaped conductive layer; and forming a second conductive layer on the dielectric film.
Claim 2
Independent Claim
144 words
A method for fabricating a crown-shaped capacitor comprising the steps of: providing a substrate having a pre-formed field effect transistor, wherein the field effect transistor includes a gate and source/drain regions; forming a dielectric layer; defining the dielectric layer to form a contact hole, wherein the contact hole exposes one of the source/drain regions; forming a first conductive layer in the contact hole and on the dielectric layer; performing a photolithography operation to form a photoresist layer having a crown-shaped pattern on the first conductive layer, this is accomplished by employing a mask comprised of a transmission layer, a partial transmission layer, and a non-transmission layer; transferring the crown-shaped pattern of the photoresist layer onto the first conductive layer to form a crown-shaped conductive layer; forming a dielectric film on the crown-shaped conductive layer; and forming a second conductive layer on the dielectric film.
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein the dielectric layer includes a SiO 2 layer.
Claim 4
Dependent Claim
19 words
The method of claim 1, wherein the step of forming the dielectric layer includes a chemical vapor deposition process.
Claim 5
Dependent Claim
18 words
The method of claim 1, wherein the step of forming the contact hole includes an anisotropic etching process.
Claim 6
Dependent Claim
19 words
The method of claim 4, wherein the anisotropic etching process uses a fluoric gas as an etching gas source.
Claim 7
Dependent Claim
13 words
The method of claim 1, wherein the non-transmission layer includes a chromium layer.
Claim 8
Dependent Claim
15 words
The method of claim 1, wherein the partial transmission layer includes a chromium oxide layer.
Claim 9
Dependent Claim
14 words
The method of claim 1, wherein the first conductive layer includes a polysilicon layer.
Claim 10
Dependent Claim
24 words
The method of claim 1, wherein the conductivity of the first conductive layer is improved by implanting a dopant into the first conductive layer.
Claim 11
Dependent Claim
14 words
The method of claim 1, wherein the dielectric film includes a SiO 2 layer.
Claim 12
Dependent Claim
15 words
The method of claim 1, wherein the dielectric film includes a silicon nitride/silicon oxide layer.
Claim 13
Dependent Claim
16 words
The method of claim 1, wherein the dielectric film includes a silicon oxide/silicon nitride/silicon oxide layer.
Claim 14
Dependent Claim
16 words
The method of claim 1, wherein the dielectric film includes a Ta 2 O 5 layer.
Claim 15
Dependent Claim
15 words
The method of claim 1, wherein the dielectric film includes a Pb(Zr, Ti)O 3 layer.
Claim 16
Dependent Claim
14 words
The method of claim 1, wherein the dielectric film includes a (Ba,Sr)TiO 3 layer.
Claim 17
Dependent Claim
14 words
The method of claim 1, wherein the second conductive layer includes a polysilicon layer.
Claim 18
Dependent Claim
24 words
The method of claim 1, wherein the conductivity of the second conductive layer is improved by implanting a dopant into the second conductive layer.
Claim 19
Dependent Claim
17 words
The method of claim 1, wherein the first conductive layer is a lower electrode of the capacitor.
Claim 20
Dependent Claim
17 words
The method of claim 1, wherein the second conductive layer is an upper electrode of the capacitor.
Claim 21
Independent Claim
135 words
A method for fabricating a crown-shaped capacitor comprising the steps of: providing a substrate having a pre-formed field effect transistor, wherein the field effect transistor includes a gate and source/drain regions; forming a dielectric layer; defining the dielectric layer to form a contact hole, wherein the contact hole exposes one of the source/drain regions; forming a first conductive layer in the contact hole and on the dielectric layer; performing a photolithography operation to form a step-like photoresist layer by employing a mask comprising a transmission layer, a set of multi-step partial transmission layers, and a non-transmission layer; transferring the pattern on the step-like photoresist layer onto the first conductive layer to form a step-like conductive layer; forming a dielectric film on the step-like conductive layer; and forming a second conductive layer on the dielectric film.
Claim 22
Independent Claim
135 words
A method for fabricating a crown-shaped capacitor comprising the steps of: providing a substrate having a pre-formed field effect transistor, wherein the field effect transistor includes a gate and source/drain regions; forming a dielectric layer; defining the dielectric layer to form a contact hole, wherein the contact hole exposes one of the source/drain regions; forming a first conductive layer in the contact hole and on the dielectric layer; performing a photolithography operation to form a step-like photoresist layer by employing a mask comprising a transmission layer, a set of multi-step partial transmission layers, and a non-transmission layer; transferring the pattern on the step-like photoresist layer onto the first conductive layer to form a step-like conductive layer; forming a dielectric film on the step-like conductive layer; and forming a second conductive layer on the dielectric film.
Claim 23
Dependent Claim
14 words
The method of claim 20, wherein the dielectric layer includes a SiO 2 layer.
Claim 24
Dependent Claim
19 words
The method of claim 20, wherein the step of forming the dielectric layer includes a chemical vapor deposition process.
Claim 25
Dependent Claim
18 words
The method of claim 20, wherein the step of forming the contact hole includes an anisotropic etching process.
Claim 26
Dependent Claim
19 words
The method of claim 23, wherein the anisotropic etching process uses a fluoric gas as an etching gas source.
Claim 27
Dependent Claim
13 words
The method of claim 20, wherein the non-transmission layer includes a chromium layer.
Claim 28
Dependent Claim
21 words
The method of claim 20, wherein the set of multi-step partial transmission layers includes a set of multi-step chromium oxide layers.
Claim 29
Dependent Claim
21 words
The method of claim 20, wherein the set of multi-step partial transmission layers includes at least two different partial transmission layers.
Claim 30
Dependent Claim
14 words
The method of claim 20, wherein the first conductive layer includes a polysilicon layer.
Claim 31
Dependent Claim
24 words
The method of claim 20, wherein the conductivity of the first conductive layer is improved by implanting a dopant into the first conductive layer.
Claim 32
Dependent Claim
14 words
The method of claim 20, wherein the dielectric film includes a SiO 2 layer.
Claim 33
Dependent Claim
15 words
The method of claim 20, wherein the dielectric film includes a silicon nitride/silicon oxide layer.
Claim 34
Dependent Claim
16 words
The method of claim 20, wherein the dielectric film includes a silicon oxide/silicon nitride/silicon oxide layer.
Claim 35
Dependent Claim
16 words
The method of claim 20, wherein the dielectric film includes a Ta 2 O 5 layer.
Claim 36
Dependent Claim
15 words
The method of claim 20, wherein the dielectric film includes a Pb(Zr, Ti)O 3 layer.
Claim 37
Dependent Claim
14 words
The method of claim 20, wherein the dielectric film includes a (Ba,Sr)TiO 3 layer.
Claim 38
Dependent Claim
14 words
The method of claim 20, wherein the second conductive layer includes a polysilicon layer.
Claim 39
Dependent Claim
24 words
The method of claim 20, wherein the conductivity of the second conductive layer is improved by implanting a dopant into the second conductive layer.
Claim 40
Dependent Claim
17 words
The method of claim 20, wherein the first conductive layer is a lower electrode of the capacitor.
Claim 41
Dependent Claim
17 words
The method of claim 20, wherein the second conductive layer is an upper electrode of the capacitor.
References Cited (Backward Citations)
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