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Method for making field effect devices and capacitors with improved thin film dielectrics and resulting devices

Assignee: Nokia of America Corp
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Filing: 1998-04-15
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Granted: 1999-12-14
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Expires: 2018-04-15
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Abstract

Abstract An electronic device is formed by depositing a thin film of high dielectric constant material on a silicon substrate, exposing the structure to plasma, and then forming the top electrode. The plasma substantially reduces the density of charge traps at the dielectric/silicon interface. Advantageously, the dielectric film is passivated with a nitrogen-containing material before forming the top electrode to prevent interdiffusion between the electrode and the dielectric.

Inventors

  • 👤 Glenn B. Alers

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 07:50
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10D1/00; H10D1/60; H10D1/68; H10D84/0123; H10D84/0126; H10D84/0158; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P95/00; H10P14/63; H10P14/6302; H10P14/6319; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6518; H10P14/6519; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 81 words
A method of making an electronic device having an improved thin film of dielectric material comprising tantalum oxide comprising the steps of: providing a substrate including an exposed silicon surface; depositing a film of dielectric tantalum oxide on said exposed silicon surface; exposing the resulting structure to plasma to reduce the density of charge traps at the interface between said film of dielectric tantalum oxide and said silicon; forming an electrode overlying said film of dielectric; and completing said electronic device.
Claim 2
Independent Claim 81 words
A method of making an electronic device having an improved thin film of dielectric material comprising tantalum oxide comprising the steps of: providing a substrate including an exposed silicon surface; depositing a film of dielectric tantalum oxide on said exposed silicon surface; exposing the resulting structure to plasma to reduce the density of charge traps at the interface between said film of dielectric tantalum oxide and said silicon; forming an electrode overlying said film of dielectric; and completing said electronic device.
Claim 3
Dependent Claim 19 words
The method of claim 1 wherein said dielectric material is a material having a dielectric constant greater than 5.
Claim 4
Dependent Claim 16 words
The method of claim 1 wherein said exposing to plasma comprises exposing to an oxygen plasma.
Claim 5
Dependent Claim 16 words
The method of claim 1 wherein said exposing to plasma comprises exposing to a nitrogen plasma.
Claim 6
Dependent Claim 28 words
The method of claim 1 wherein said exposing to plasma comprises exposing to a plasma of nitrogen or oxygen at a substrate temperature in the range 100-400° C.
Claim 7
Dependent Claim 25 words
The method of claim 1 wherein said depositing of dielectric material comprises depositing a film of dielectric having a thickness in the range 2-10 nm.
Claim 8
Dependent Claim 24 words
The method of claim 1 further comprising the step of applying a nitrogen-containing material to said dielectric before forming said electrode overlying said dielectric.
Claim 9
Dependent Claim 16 words
The method of claim 1 wherein said forming an electrode comprises forming an electrode comprising polysilicon.

References Cited (Backward Citations)

US4762728A Cited
US5442585A Cited
US5337207A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-12-13 2003-06-14 2003-12-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-12-13 2007-06-14 2007-12-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-12-13 2011-06-14 2011-12-14 $7700.00 Window Closed / Lapsed

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