US5998847A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low voltage active body semiconductor device
Assignee: GlobalFoundries Inc
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Filing: 1998-08-11
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Granted: 1999-12-07
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Expires: 2018-08-11
Abstract
Abstract An active FET body device which comprises an active FET region including a gate, a body region and electrical connection between said gate and said body region that is located within the active FET region is provided along with various methods for fabricating the devices. The electrical connection extends over substantially the entire width of the FET.
Inventors
- 👤 Fariborz Assaderaghi
- 👤 Claude L. Bertin
- 👤 Jeffrey P. Gambino
- 👤 Louis Lu-Chen Hsu
- 👤 Jack Allan Mandelman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:33
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10D; H10D30/00; H10D30/60; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6711; H10D86/00; H10D86/01; H10B12/03; H10B12/038; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
46 words
An active FET body device which comprises an active FET region including a gate; a channel region and electrical connection between said gate and said channel region located within said active FET region, wherein the electrical connection extends over substantially the entire width of the FET.
Claim 2
Dependent Claim
46 words
An active FET body device which comprises an active FET region including a gate; a channel region and electrical connection between said gate and said channel region located within said active FET region, wherein the electrical connection extends over substantially the entire width of the FET.
Claim 3
Dependent Claim
12 words
The active FET body device of claim 1 comprising a SOI substrate.
Claim 4
Dependent Claim
22 words
The device of claim 1 wherein said connection between said gate and said channel region is self-aligned to edges of the gate.
Claim 5
Dependent Claim
16 words
The device of claim 2 being a SOI DRAM array device, logic device or driver device.
Claim 6
Dependent Claim
31 words
The active FET body device of claim 1 wherein a metallic silicide and silicon oxide structure are located on top of said gate to act as a cap for said gate.
Claim 7
Dependent Claim
15 words
The active FET body device according to claim 1 wherein said gate is doped polysilicon.
Claim 8
Dependent Claim
33 words
The active FET body device of claim 1 wherein the length of the electrical connection between the gate and channel region along a surface of the FET is about 200 Å or less.
Claim 9
Dependent Claim
33 words
The active FET body device of claim 1 wherein the length of the electrical connection between the gate and channel region along a surface of the FET is about 100 Å or less.
References Cited (Backward Citations)
JPS6293977A
Cited
US5120666A
Cited
US5298443A
Cited
US5834816A
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JPH05343669A
Cited
US5852319A
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US5714393A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-06 | 2003-06-07 | 2003-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-06 | 2007-06-07 | 2007-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-06 | 2011-06-07 | 2011-12-07 | $7700.00 | Window Closed / Lapsed |