US5994200A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Trench isolation structure of a semiconductor device and a method for thereof
Assignee: Mosaid Technologies Inc
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Filing: 1997-07-22
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Granted: 1999-11-30
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Expires: 2017-07-22
Abstract
Abstract A semiconductor device isolation structure includes a trench formed in a substrate vertically from the major surface of the substrate, a trench plug for filling the trench, and a buried insulation region formed under the trench adjacent thereto, and a method of the same includes the steps of forming a trench in a substrate and vertically from the major surface of the substrate, selectively implanting oxide ions under the trench of the substrate, and forming a trench plug so as to fill the trench.
Inventors
- 👤 Young-Gwan Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:32
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/012; H10W10/0121; H10W10/0125; H10W10/10; H10W10/13; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
64 words
A method of fabricating a semiconductor device having a trench isolation structure, comprising: providing a substrate; forming a trench in said substrate; forming a first isolation region beneath said trench; forming a second and distinct isolation region into said trench; and forming a trench liner on a surface of the trench, wherein the first and second isolation regions are separated by the trench liner.
Claim 2
Independent Claim
64 words
A method of fabricating a semiconductor device having a trench isolation structure, comprising: providing a substrate; forming a trench in said substrate; forming a first isolation region beneath said trench; forming a second and distinct isolation region into said trench; and forming a trench liner on a surface of the trench, wherein the first and second isolation regions are separated by the trench liner.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein the step of forming said first isolation region comprises: implanting ions beneath said trench; and annealing said implanted ions.
Claim 4
Dependent Claim
10 words
The method of claim 2, wherein said ions include oxygen.
Claim 5
Dependent Claim
17 words
The method of claim 1, wherein said second isolation region is formed by depositing an insulating material.
Claim 6
Dependent Claim
13 words
The method of claim 4, wherein said insulating material includes a tetraethylortho silicate(TEOS).
Claim 7
Independent Claim
103 words
A method of fabricating a semiconductor device having a trench isolation structure, comprising: providing a substrate; forming a mask layer on said substrate; selectively removing a portion of said mask layer to expose said substrate; forming a trench in said exposed substrate using said mask layer as a mask; implanting ions beneath said trench; annealing said implanted ions for form a first isolation region; forming an insulating layer into said trench to form a second and distinct isolation region; and forming a trench liner on a surface of the trench, wherein the first and second insulation regions are separated by the trench liner.
Claim 8
Independent Claim
103 words
A method of fabricating a semiconductor device having a trench isolation structure, comprising: providing a substrate; forming a mask layer on said substrate; selectively removing a portion of said mask layer to expose said substrate; forming a trench in said exposed substrate using said mask layer as a mask; implanting ions beneath said trench; annealing said implanted ions for form a first isolation region; forming an insulating layer into said trench to form a second and distinct isolation region; and forming a trench liner on a surface of the trench, wherein the first and second insulation regions are separated by the trench liner.
Claim 9
Dependent Claim
19 words
The method of claim 6, wherein said mask layer is made of a buffer oxide layer and nitride layer.
Claim 10
Dependent Claim
16 words
The method of claim 6, wherein said trench is formed by anisotropically etching said exposed substrate.
Claim 11
Dependent Claim
10 words
The method of claim 6, wherein said ions include oxygen.
Claim 12
Dependent Claim
38 words
The method of claim 6, wherein the steps of forming an insulating layer comprises: depositing a trench-filling material layer on said trench and said mask layer; and selectively removing said trench-filling material layer to expose said mask layer.
Claim 13
Dependent Claim
14 words
The method of claim 10, wherein said trench-filling material layer includes a tetraethylortho silicate(TEOS).
Claim 14
Dependent Claim
23 words
The method of claim 10, wherein said selectively removing of said trench-filling material layer is a plasma etching or a chemical mechanical polishing(CMP).
Claim 15
Independent Claim
65 words
A method of fabricating a trench isolation structure within a semiconductor device, comprising: forming a first isolating layer under a trench within a substrate via an ion implantation process; forming a trench liner on a surface of the trench; and forming a second isolating layer within the trench via a deposition process, where the first and second isolating layers are separated by the trench liner.
Claim 16
Independent Claim
65 words
A method of fabricating a trench isolation structure within a semiconductor device, comprising: forming a first isolating layer under a trench within a substrate via an ion implantation process; forming a trench liner on a surface of the trench; and forming a second isolating layer within the trench via a deposition process, where the first and second isolating layers are separated by the trench liner.
Claim 17
Dependent Claim
37 words
The method of claim 13, where forming the first isolation layer includes: implanting ions into a portion of the substrate located under the trench; oxidizing the ion-implanted portion of the substrate before forming the second isolating layer.
Claim 18
Dependent Claim
36 words
The method of claim 13, where forming the second isolation layer includes: depositing a trench-filling material on the semiconductor device; selectively removing the trench-filling material to expose portions of the semiconductor device other than the trench.
Claim 19
Dependent Claim
19 words
The method of claim 13, where the trench liner is formed by thermal oxidation of a silicon oxide layer.
Claim 20
Dependent Claim
20 words
The method of claim 13, where the trench liner is formed by chemical vapor deposition of a silicon oxide layer.
Claim 21
Dependent Claim
16 words
The method of claim 13, where the trench liner is formed of a silicon nitride layer.
Claim 22
Dependent Claim
21 words
The method of claim 13, where the trench liner is formed of a laminated layer of silicon nitride and silicon oxide.
Claim 23
Dependent Claim
16 words
The method of claim 13, where the trench liner is formed of a silicon oxynitride layer.
References Cited (Backward Citations)
US4566172A
Cited
US4842675A
Cited
US4968636A
Cited
US5099304A
Cited
US5393693A
Cited
US5445989A
Cited
US5807784A
Cited
US5686344A
Cited
US5783476A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-29 | 2003-05-31 | 2003-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-29 | 2007-05-31 | 2007-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-29 | 2011-05-31 | 2011-11-30 | $7700.00 | Window Closed / Lapsed |