US5807784A
Expired / Lapsed
US
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Device isolation methods for a semiconductor device
Assignee: Samsung Electronics Co Ltd
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Filing: 1995-12-05
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Granted: 1998-09-15
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Expires: 2015-12-05
Abstract
Abstract A method of forming a device isolation layer in a semiconductor device comprising the steps of implanting oxygen ions in a field region of a major surface of semiconductor substrate, and oxidizing the oxygen implanted region to form a field oxide layer having an upper portion of first thickness formed above the major surface of the semiconductor substrate, and a lower portion of second thickness formed in the semiconductor substrate, wherein the ratio of first thickness to second thickness is not less than 1 to 2.
Inventors
- 👤 Hyung-seob Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:18
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/0125; H10W10/014; H10W10/0143; H10W10/0145; H10W10/0147; H10W10/10; H10W10/13; H10W10/17
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
61 words
A method of forming a device isolation layer in a semiconductor device, comprising the steps of: forming a trench in a field region of a semiconductor substrate; implanting oxygen ions into a bottom surface of the trench; oxidizing the oxygen implanted region to form a field oxide layer which partially fills the trench; and depositing insulation material to fill the trench.
Claim 2
Independent Claim
61 words
A method of forming a device isolation layer in a semiconductor device, comprising the steps of: forming a trench in a field region of a semiconductor substrate; implanting oxygen ions into a bottom surface of the trench; oxidizing the oxygen implanted region to form a field oxide layer which partially fills the trench; and depositing insulation material to fill the trench.
Claim 3
Dependent Claim
50 words
The method of claim 1, further comprising, prior to the step of forming the trench, the steps of: forming an etch blocking layer over the semiconductor substrate; and patterning the etch blocking layer to expose a portion of the semiconductor substrate in which the field region is to be formed.
Claim 4
Dependent Claim
44 words
The method of claim 2, wherein the etch blocking layer is formed of one selected from the group consisting of an oxide layer, a silicon nitride layer, a silicon oxynitride layer, and a double layer comprising an oxide layer and a silicon nitride layer.
Claim 5
Dependent Claim
49 words
The method of claim 1, wherein the step of implanting oxygen ions is performed at an implantation energy in a range of from 30 KeV to 150 KeV and at an oxygen ion dose in a range of from 1.0×10 15 ions/cm 2 to 1.0×10 19 ions/cm 2 .
Claim 6
Dependent Claim
62 words
The method of claim 1, wherein the field oxide layer is formed having an upper portion of first thickness formed above a bottom surface of the trench, and a lower portion of second thickness formed in the semiconductor substrate below the bottom surface of the trench, wherein the ratio of first thickness to second thickness is not less than 1 to 2.
Claim 7
Dependent Claim
26 words
The method of claim 1, further comprising the step of planarizing an upper surface of the device isolation layer by using a chemical mechanical polishing method.
Claim 8
Independent Claim
163 words
A method of forming a device isolation layer in a semiconductor device, comprising the steps of: forming an etch blocking layer on the surface of a semiconductor substrate; patterning the etch blocking layer to expose a portion of the semiconductor substrate; forming a trench in the exposed portion of the semiconductor substrate; implanting oxygen ions into a bottom surface of the trench; oxidizing the oxygen implanted region to form a field oxide layer having an upper portion of first thickness formed above a bottom surface of the trench to partially fill the trench, and a lower portion of second thickness formed in the semiconductor substrate below the bottom surface of the trench, wherein the ratio of first thickness to second thickness is not less than 1 to 2; depositing insulation material over field oxide layer to fill the trench; and, planarizing an upper surface of the insulation material by a chemical-mechanical polishing method using the etch blocking layer and as an etch stopper.
Claim 9
Independent Claim
163 words
A method of forming a device isolation layer in a semiconductor device, comprising the steps of: forming an etch blocking layer on the surface of a semiconductor substrate; patterning the etch blocking layer to expose a portion of the semiconductor substrate; forming a trench in the exposed portion of the semiconductor substrate; implanting oxygen ions into a bottom surface of the trench; oxidizing the oxygen implanted region to form a field oxide layer having an upper portion of first thickness formed above a bottom surface of the trench to partially fill the trench, and a lower portion of second thickness formed in the semiconductor substrate below the bottom surface of the trench, wherein the ratio of first thickness to second thickness is not less than 1 to 2; depositing insulation material over field oxide layer to fill the trench; and, planarizing an upper surface of the insulation material by a chemical-mechanical polishing method using the etch blocking layer and as an etch stopper.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-14 | 2002-03-16 | 2002-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-14 | 2006-03-16 | 2006-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-14 | 2010-03-16 | 2010-09-15 | $7700.00 | Window Closed / Lapsed |