Method for substrate processing with improved throughput and yield

Abstract

Abstract The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides a method of substrate processing. The method includes steps of circulating a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heating a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60° C. or less. The method also includes the step of flowing at a flow rate a gas into the chamber to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

Inventors

• 👤 Jun Zhao
• 👤 Lee Luo
• 👤 Xiao Liang Jin

Bibliographic Details