US5989988A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1998-11-16
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Granted: 1999-11-23
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Expires: 2018-11-16
Abstract
Abstract A silicon region partitioned by insulating films is formed on a main surface of a substrate. A mixed film of first and second metals is formed directly or indirectly on the substrate having the silicon region formed thereon. Then, a heat treatment is applied to permit the first and second metals to react with silicon in the silicon region so as to form selectively a first silicide film on the surface of the silicon region. Further, the first silicide film is subjected to a heat treatment under a nitriding atmosphere so as to form a second silicide film consisting essentially of the first metal and silicon on the surface of the silicon region and a nitride film consisting essentially of the second metal and nitrogen on the surface of the second silicide film or both on the surface and at the crystal grain boundary of the second silicide film.
Inventors
- 👤 Toshihiko Iinuma
- 👤 Kyoichi Suguro
- 👤 Soichi Nadahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:44
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10W20/032
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
139 words
A method of manufacturing a semiconductor device, comprising: the step of forming a silicon region partitioned by insulating films on a main surface region of a substrate; the step of forming a mixed film of first and second metals directly or indirectly on the substrate having the silicon region formed therein; the step of selectively forming by a heat treatment a silicide film on the surface of the silicon region by the reaction between the metal within the mixed film and silicon in the silicon region; and wherein the first metal is at least one metal selected from the group consisting of cobalt (Co), nickel (Ni), platinum (Pt) and palladium (Pd); and the second metal is at least one metal selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb) and tantalum (Ta).
Claim 2
Independent Claim
139 words
A method of manufacturing a semiconductor device, comprising: the step of forming a silicon region partitioned by insulating films on a main surface region of a substrate; the step of forming a mixed film of first and second metals directly or indirectly on the substrate having the silicon region formed therein; the step of selectively forming by a heat treatment a silicide film on the surface of the silicon region by the reaction between the metal within the mixed film and silicon in the silicon region; and wherein the first metal is at least one metal selected from the group consisting of cobalt (Co), nickel (Ni), platinum (Pt) and palladium (Pd); and the second metal is at least one metal selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb) and tantalum (Ta).
Claim 3
Dependent Claim
165 words
The method of manufacturing a semiconductor device according to claim 1, wherein the step of selectively forming by a heat treatment a silicide film on the surface of the silicon region by the reaction between the metal within the mixed film and silicon in the silicon region includes: the process of selectively forming by a heat treatment a first silicide film on the surface of the silicon region by the reaction among the first metal, the second metal and silicon in the silicon region; and the process of subjecting the first silicide film to a heat treatment under a nitriding atmosphere so as to form a second silicide film consisting essentially of the first metal and silicon on the surface of the silicon region and a nitride film consisting essentially of the second metal and nitrogen on the surface of the second silicide film or both on the surface of the second silicide film and at the crystal grain boundary of the second silicide film.
Claim 4
Dependent Claim
165 words
The method of manufacturing a semiconductor device according to claim 1, wherein: the step of forming a mixed film of first and second metals directly or indirectly on the substrate having the silicon region formed therein includes the process of forming a silicon oxide film on the surface of the silicon region, and the process of forming a mixed film of the first and second metals on the substrate having the silicon oxide film formed thereon; and the step of selectively forming by a heat treatment a silicide film on the surface of the silicon region by the reaction between the metal within the mixed film and silicon in the silicon region includes the process of allowing the silicon oxide film formed on the surface of the silicon region to be reduced by the second metal, and the process of selectively forming a silicide film on the surface of the silicon region by the reaction between the first metal and silicon in the silicon region.
Claim 5
Dependent Claim
68 words
The method of manufacturing a semiconductor device according to claim 3, wherein the thickness of the silicon oxide film formed on the surface of the silicon region is not larger than an effective thickness of the second metal contained in the mixed film, said effective thickness being obtained by multiplying the thickness of the mixed film by a ratio of the second metal contained in the mixed film.
Claim 6
Dependent Claim
32 words
The method of manufacturing a semiconductor device according to claim 3, wherein the thickness of the silicon oxide film formed on the surface of the silicon region is at least 0.5 nm.
Claim 7
Dependent Claim
96 words
The method of manufacturing a semiconductor device according to claim 1, wherein the step of selectively forming by a heat treatment a silicide film on the surface of the silicon region by the reaction between the metal within the mixed film and silicon in the silicon region includes a heat treatment under a nitriding atmosphere to form a silicide film consisting essentially of the first metal and silicon on the surface of the silicon region and a nitride film consisting essentially of the second metal and nitrogen at the crystal grain boundary of the silicide film.
Claim 8
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 1, wherein the mixed film of said first and second metals is formed by means of sputtering.
Claim 9
Independent Claim
156 words
A method of manufacturing a semiconductor device, comprising: the step of selectively forming a silicide film consisting essentially of a first metal and silicon on a surface of a silicon region partitioned by first insulating films on a main surface region of a substrate and a nitride film consisting essentially of a second metal and nitrogen on the surface of the silicide film or both on the surface of the silicide film and at the crystal grain boundary of the silicide film; the step of forming a second insulating film, said second insulating film having an opening on the nitride film; the step of burying amorphous silicon in the opening of the second insulating film; the step of forming an aluminum layer on the amorphous silicon layer; and the step of applying a heat treatment to have the amorphous silicon layer replaced by the aluminum layer so as to bury the aluminum layer in the opening.
Claim 10
Independent Claim
156 words
A method of manufacturing a semiconductor device, comprising: the step of selectively forming a silicide film consisting essentially of a first metal and silicon on a surface of a silicon region partitioned by first insulating films on a main surface region of a substrate and a nitride film consisting essentially of a second metal and nitrogen on the surface of the silicide film or both on the surface of the silicide film and at the crystal grain boundary of the silicide film; the step of forming a second insulating film, said second insulating film having an opening on the nitride film; the step of burying amorphous silicon in the opening of the second insulating film; the step of forming an aluminum layer on the amorphous silicon layer; and the step of applying a heat treatment to have the amorphous silicon layer replaced by the aluminum layer so as to bury the aluminum layer in the opening.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-22 | 2003-05-24 | 2003-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-22 | 2007-05-24 | 2007-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-22 | 2011-05-24 | 2011-11-23 | $7700.00 | Window Closed / Lapsed |