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US5989983A
Expired / Lapsed
US
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Method of fabricating and curing spin-on-glass layers by electron beam irradiation
Assignee: Samsung Electronics Co Ltd
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Filing: 1997-08-27
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Granted: 1999-11-23
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Expires: 2017-08-27
Abstract
Abstract An insulating layer may be fabricated on a microelectronic substrate by spinning a layer of spin-on-glass (SOG) on a microelectronic substrate and curing the SOG layer by irradiating the SOG layer with an electronic beam. Irradiating may take place simultaneously with heating the substrate to a temperature below about 500 DEG C. An underlying and/or overlying capping layer may also be provided. Alternatively, rather than irradiating the SOG layer, an overlying capping layer may be irradiated.
Inventors
- 👤 Ju-seon Goo
- 👤 Ji-Hyun Choi
- 👤 Byung-keun Hwang
- 👤 Hae-Jeong Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6536; H10P14/6539; H10P14/6548; H10P95/00; H10W20/074; H10W20/077; H10W20/093; H10W20/095; H10W20/097; H10P14/6342
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
42 words
A method of fabricating an insulating layer on a microelectronic substrate comprising the steps of: spinning a layer of spin-on-glass (SOG) on the microelectronic substrate; forming a capping layer on the SOG layer; and irradiating the capping layer with an electron beam.
Claim 2
Independent Claim
42 words
A method of fabricating an insulating layer on a microelectronic substrate comprising the steps of: spinning a layer of spin-on-glass (SOG) on the microelectronic substrate; forming a capping layer on the SOG layer; and irradiating the capping layer with an electron beam.
Claim 3
Dependent Claim
28 words
A method according to claim 1 wherein the following step is performed simultaneously with the irradiating step: heating the microelectronic substrate to a temperature below about 500° C.
Claim 4
Dependent Claim
31 words
A method according to claim 1 wherein the irradiating step comprises the step of irradiating the capping layer with an electron beam of at least same size as the SOG layer.
Claim 5
Dependent Claim
46 words
A method according to claim 1 wherein the irradiating step comprises the steps of: placing the capping layer adjacent an electron beam cathode in an electron beam chamber; and applying voltage between about 500 and 30,000 volts to the cathode to thereby generate an electron beam.
Claim 6
Dependent Claim
24 words
A method according to claim 1 wherein the following step is performed between the spinning step and the forming step: curing the SOG layer.
Claim 7
Dependent Claim
22 words
A method according to claim 5 wherein the curing step comprises the step of thermally curing the SOG layer below 450° C.
Claim 8
Dependent Claim
46 words
A method according to claim 1 wherein the following step is performed prior to the spinning step: forming a second capping layer on the microelectronic substrate; and wherein the spinning step comprises the step of spinning a layer of spin-on-glass (SOG) on the second capping layer.
Claim 9
Dependent Claim
31 words
A method according to claim 7 wherein the second capping layer is formed of at least one material selected from the group consisting of SiO 2 , SiON, SiOF and SiN.
Claim 10
Dependent Claim
25 words
A method according to claim 1 wherein the irradiating step is followed by the step of: forming a third capping layer on the capping layer.
Claim 11
Dependent Claim
30 words
A method according to claim 1 wherein the capping layer is formed of at least one material selected from the group consisting of SiO 2 , SiON, SiOF and SiN.
Claim 12
Dependent Claim
24 words
A method according to claim 1 wherein the irradiating step is followed by the step of: forming a wiring layer on the capping layer.
Claim 13
Dependent Claim
50 words
A method according to claim 1 wherein the following step is performed before the spinning step: forming a patterned wiring layer on the microelectronic substrate; and wherein the spinning step comprises the step of spinning a layer of spin-on-glass (SOG) on the microelectronic substrate including on the patterned wiring layer.
Claim 14
Independent Claim
45 words
A method of fabricating a planarized insulating layer on an underlayer on a microelectronic substrate, comprising the steps of: spinning a layer of spin-on-glass (SOG) on the underlayer; forming a capping layer on the SOG layer; and irradiating the capping layer with an electron beam.
Claim 15
Independent Claim
45 words
A method of fabricating a planarized insulating layer on an underlayer on a microelectronic substrate, comprising the steps of: spinning a layer of spin-on-glass (SOG) on the underlayer; forming a capping layer on the SOG layer; and irradiating the capping layer with an electron beam.
Claim 16
Dependent Claim
24 words
A method according to claim 13 wherein the spinning step is preceded by the step of forming a first capping layer on the underlayer.
Claim 17
Dependent Claim
26 words
A method according to claim 13 wherein the irradiating step is followed by the step of forming a second capping layer on the irradiated capping layer.
Claim 18
Dependent Claim
21 words
A method according to claim 14 wherein the first capping layer comprises a CVD oxide layer or an LTO oxide layer.
Claim 19
Dependent Claim
19 words
A method according to claim 14 wherein the first capping layer comprises SiO 2 , SiON, SiOF or SiN.
Claim 20
Dependent Claim
19 words
A method according to claim 15 wherein the second capping layer comprises SiO 2 , SiON, SiOF or SiN.
Claim 21
Dependent Claim
12 words
A method according to claim 13 wherein the SOG comprises hydrogen silsesquioxane.
Claim 22
Dependent Claim
28 words
A method according to claim 13 wherein the following step is performed simultaneously with the irradiating step: heating the microelectronic substrate to a temperature below about 500° C.
Claim 23
Dependent Claim
31 words
A method according to claim 13 wherein the irradiating step comprises the step of irradiating the capping layer with an electron beam of at least same size as the SOG layer.
Claim 24
Dependent Claim
46 words
A method according to claim 13 wherein the irradiating step comprises the steps of: placing the capping layer adjacent an electron beam cathode in an electron beam chamber; and applying voltage between about 500 and 30,000 volts to the cathode to thereby generate an electron beam.
Claim 25
Dependent Claim
24 words
A method according to claim 13 wherein the following step is performed between the spinning step and the forming step: curing the SOG layer.
Claim 26
Dependent Claim
22 words
A method according to claim 23 wherein the curing step comprises the step of thermally curing the SOG layer below 450° C.
Claim 27
Dependent Claim
30 words
A method according to claim 13 wherein the capping layer is formed of at least one material selected from the group consisting of SiO 2 , SiON, SiOF and SiN.
Claim 28
Dependent Claim
24 words
A method according to claim 13 wherein the irradiating step is followed by the step of: forming a wiring layer on the capping layer.
Claim 29
Dependent Claim
50 words
A method according to claim 13 wherein the following step is performed before the spinning step: forming a patterned wiring layer on the microelectronic substrate; and wherein the spinning step comprises the step of spinning a layer of spin-on-glass (SOG) on the microelectronic substrate including on the patterned wiring layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-22 | 2003-05-24 | 2003-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-22 | 2007-05-24 | 2007-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-22 | 2011-05-24 | 2011-11-23 | $7700.00 | Window Closed / Lapsed |