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US5986953A
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Input/output circuits and methods for testing integrated circuit memory devices
Assignee: Samsung Electronics Co Ltd
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Filing: 1998-05-06
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Granted: 1999-11-16
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Expires: 2018-05-06
Abstract
Abstract Integrated circuit memory devices include a plurality of pads that receive signals from external of the memory device and a plurality of data buses, a respective one of which is operatively connected to a respective one of the plurality of pads. A plurality of multiplexers is provided, a respective one of which is operatively connected to a respective one of the pads and to each of the data buses, to write data from the data buses to the memory cell in a direct access test mode, and to write data from the respective one of the pads to the memory cell array in a normal mode. The integrated circuit memory devices also preferably include a plurality of input/output devices, a respective one of which operatively connects the respective one of the pads to the respective one of the multiplexers. The plurality of input/output devices preferably are a plurality of pipelines that store signals that are serially received from external of the memory device, and that provide the stored signals to the multiplexers.
Inventors
- 👤 Tae-hyun Kim
- 👤 Kye-Hyun Kyung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:02
CPC Classifications
G; G11; G11C; G11C7/00; G11C29/00; G11C29/04; G11C29/08; G11C29/48
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
135 words
An integrated circuit memory device comprising: a memory cell array; a plurality of pads that receive signals from external of the memory device; a plurality of data buses, a respective one of which is operatively connected to a respective one of the plurality of pads; a plurality of multiplexers, a respective one of which is operatively connected to a respective one of the pads and to each of the data buses, to write data from the data buses to the memory cell array in a direct access test mode and to write data from the respective one of the pads to the memory cell array in a normal mode; and a plurality of input/output devices, a respective one of which operatively connects the respective one of the pads to the respective one of the multiplexers.
Claim 2
Dependent Claim
135 words
An integrated circuit memory device comprising: a memory cell array; a plurality of pads that receive signals from external of the memory device; a plurality of data buses, a respective one of which is operatively connected to a respective one of the plurality of pads; a plurality of multiplexers, a respective one of which is operatively connected to a respective one of the pads and to each of the data buses, to write data from the data buses to the memory cell array in a direct access test mode and to write data from the respective one of the pads to the memory cell array in a normal mode; and a plurality of input/output devices, a respective one of which operatively connects the respective one of the pads to the respective one of the multiplexers.
Claim 3
Dependent Claim
42 words
An integrated circuit memory device according to claim 1 wherein the plurality of input/output devices comprise a plurality of pipelines that store signals that are serially received from external of the memory device, and that provide the stored signals to the multiplexers.
Claim 4
Dependent Claim
165 words
An integrated circuit memory device comprising: a memory cell array; a plurality of pads that receive signals from external of the memory device; a plurality of data buses a respective one of which is operatively connected to a respective one of the plurality of pads; and a plurality of multiplexers a respective one of which is operatively connected to a respective one of the pads and to each of the data buses, to write data from the data buses to the memory cell array in a direct access test mode and to write data from the respective one of the pads to the memory cell array in a normal mode; wherein the multiplexers are responsive to a direct access test signal, to write data from the data buses to the memory cell array when the direct access test signal is active and to write data from the respective one of the pads to the memory cell array when the direct access test signal is inactive.
Claim 5
Dependent Claim
165 words
An integrated circuit memory device comprising: a memory cell array; a plurality of pads that receive signals from external of the memory device; a plurality of data buses a respective one of which is operatively connected to a respective one of the plurality of pads; and a plurality of multiplexers a respective one of which is operatively connected to a respective one of the pads and to each of the data buses, to write data from the data buses to the memory cell array in a direct access test mode and to write data from the respective one of the pads to the memory cell array in a normal mode; wherein the multiplexers are responsive to a direct access test signal, to write data from the data buses to the memory cell array when the direct access test signal is active and to write data from the respective one of the pads to the memory cell array when the direct access test signal is inactive.
Claim 6
Dependent Claim
181 words
An integrated circuit memory device comprising: a memory cell array; a plurality of first pads that receive signals from external of the memory device; a plurality of data buses a respective one of which is operatively connected to a respective one of the plurality of first pads; a plurality of multiplexers a respective one of which is operatively connected to a respective one of the first pads and to each of the data buses, to write data from the data buses to the memory cell array in a direct access test mode and to write data from the respective one of the first pads to the memory cell array in a normal mode; a plurality of second pads that receive address signals from external of the memory device and that are not operatively connected to the data buses; and a plurality of buffers, a respective one of which is operatively connected to a respective one of the second pads and to the memory cell array, to provide the address signals to the memory cell array in the direct access test mode.
Claim 7
Dependent Claim
181 words
An integrated circuit memory device comprising: a memory cell array; a plurality of first pads that receive signals from external of the memory device; a plurality of data buses a respective one of which is operatively connected to a respective one of the plurality of first pads; a plurality of multiplexers a respective one of which is operatively connected to a respective one of the first pads and to each of the data buses, to write data from the data buses to the memory cell array in a direct access test mode and to write data from the respective one of the first pads to the memory cell array in a normal mode; a plurality of second pads that receive address signals from external of the memory device and that are not operatively connected to the data buses; and a plurality of buffers, a respective one of which is operatively connected to a respective one of the second pads and to the memory cell array, to provide the address signals to the memory cell array in the direct access test mode.
Claim 8
Dependent Claim
39 words
An integrated circuit memory device according to claim 4 further comprising: a plurality of second multiplexers, a respective one of which is operatively connected to a respective one of the second pads and to each of the data buses.
Claim 9
Dependent Claim
39 words
An integrated circuit memory device according to claim 5 further comprising: a plurality of second input/output devices, a respective one of which operatively connects the respective one of the second pads to the respective one of the second multiplexers.
Claim 10
Dependent Claim
136 words
An integrated circuit memory device comprising: a memory cell array; a plurality of first pads that receive signals from external of the memory device; a plurality of data buses, a respective one of which is operatively connected to a respective one of the plurality of first pads; means for writing data from the data buses to the memory cell array in a direct access test mode and for writing data from the respective one of the first pads to the memory cell array in a normal mode; a plurality of second pads that receive address signals from external of the memory device and that are not operatively connected to the data buses; and means for providing the address signals from the plurality of second pads to the memory cell array in the direct access test mode.
Claim 11
Dependent Claim
136 words
An integrated circuit memory device comprising: a memory cell array; a plurality of first pads that receive signals from external of the memory device; a plurality of data buses, a respective one of which is operatively connected to a respective one of the plurality of first pads; means for writing data from the data buses to the memory cell array in a direct access test mode and for writing data from the respective one of the first pads to the memory cell array in a normal mode; a plurality of second pads that receive address signals from external of the memory device and that are not operatively connected to the data buses; and means for providing the address signals from the plurality of second pads to the memory cell array in the direct access test mode.
Claim 12
Dependent Claim
66 words
An integrated circuit memory device according to claim 7 wherein the means for writing is responsive to a direct access test signal, for writing data from the data buses to the memory cell array when the direct access test signal is active and for writing data from the respective one of the pads to the memory cell array when the direct access test signal is inactive.
Claim 13
Independent Claim
112 words
A method of testing an integrated circuit memory device comprising a memory cell array, a plurality of pads that receive signals from external of the memory device and a plurality of data buses, a respective one of which is operatively connected to a respective one of the plurality of pads, the testing method comprising the steps of: writing data from the data buses to the memory cell array in a direct access test mode; storing, data that is serially received at the respective one of the pads in a normal mode; and writing the stored data from the respective one of the pads to the memory cell array in the normal mode.
Claim 14
Independent Claim
112 words
A method of testing an integrated circuit memory device comprising a memory cell array, a plurality of pads that receive signals from external of the memory device and a plurality of data buses, a respective one of which is operatively connected to a respective one of the plurality of pads, the testing method comprising the steps of: writing data from the data buses to the memory cell array in a direct access test mode; storing, data that is serially received at the respective one of the pads in a normal mode; and writing the stored data from the respective one of the pads to the memory cell array in the normal mode.
Claim 15
Independent Claim
143 words
A method of testing an integrated circuit memory device comprising a memory cell array, a plurality of first pads that receive signals from external of the memory device a plurality of data buses a respective one of which is operatively connected to a respective one of the plurality of first pads and a plurality of second pads that receive address signals from external of the memory device and that are not operatively connected to the data buses the testing method comprising the steps of: writing data from the data buses to the memory cell array in a direct access test mode; and writing data from the respective one of the first pads to the memory cell array in a normal mode; and providing the address signals from the plurality of second pads to the memory cell array in the direct access test mode.
Claim 16
Independent Claim
143 words
A method of testing an integrated circuit memory device comprising a memory cell array, a plurality of first pads that receive signals from external of the memory device a plurality of data buses a respective one of which is operatively connected to a respective one of the plurality of first pads and a plurality of second pads that receive address signals from external of the memory device and that are not operatively connected to the data buses the testing method comprising the steps of: writing data from the data buses to the memory cell array in a direct access test mode; and writing data from the respective one of the first pads to the memory cell array in a normal mode; and providing the address signals from the plurality of second pads to the memory cell array in the direct access test mode.
Claim 17
Dependent Claim
43 words
An integrated circuit memory device according to claim 1 wherein a respective pad is connected to a respective data bus and a respective data bus is connected to a respective multiplexer via at least two data lines in the direct access test mode.
Claim 18
Dependent Claim
43 words
An integrated circuit memory device according to claim 3 wherein a respective pad is connected to a respective data bus and a respective data bus is connected to a respective multiplexer via at least two data lines in the direct access test mode.
Claim 19
Dependent Claim
43 words
An integrated circuit memory device according to claim 4 wherein a respective pad is connected to a respective data bus and a respective data bus is connected to a respective multiplexer via at least two data lines in the direct access test mode.
Claim 20
Dependent Claim
43 words
An integrated circuit memory device according to claim 7 wherein a respective pad is connected to a respective data bus and a respective data bus is connected to a respective multiplexer via at least two data lines in the direct access test mode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-15 | 2003-05-17 | 2003-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-15 | 2007-05-17 | 2007-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-15 | 2011-05-17 | 2011-11-16 | $7700.00 | Window Closed / Lapsed |