US5659514A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory cell and current mirror circuit
Assignee: Individual
•
Filing: 1996-07-09
•
Granted: 1997-08-19
•
Expires: 2016-07-09
Abstract
Abstract A current mirror circuit for fast programming of semiconductor memory cells and for ease of testing and verifying the condition of the memory chips. The current mirror includes a reference branch and multiple output branches. At least one output branch connects to a programmable memory cell through FET transistors and the programming current flows from the output branch to the memory cell to supply it with the programming current. When the programming of the memory cells is accomplished the drain current of the memory cell is reduced to be below that of the current of the reference branch of the current mirror. Because the memory cell is connected in series with the output branch of the current mirror, the current of the output branch is also reduced to be below the current of the reference branch.
Inventors
- 👤 Emanuel Hazani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:31
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5621; H; H10; H10B; H10B41/00; H10B41/10; G11C11/5628; G11C11/5635; G11C11/5642; G11C16/00; G11C16/02; G11C16/06; G11C16/08; G11C16/10; G11C29/00; G11C29/04; G11C29/50; G11C29/50004; H10B41/30; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/6891; G11C16/04; G11C16/0491; G11C2029/0403; G11C2029/5002; G11C2211/00; G11C2211/56; G11C2211/562; G11C2211/5621; G11C2211/5622; G11C2211/564; G11C2211/5645
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
125 words
A circuit for fast programming of semiconductor memory cells and for ease of testing to verify the condition of memory chips comprising: a current mirror including a reference branch and multiple output branches; at least one of said output branches is connected to a programmable memory cell through one or more FET transistors so that programming current flows from said output branch to said memory cell to supply it with programming current; whereby when the programming of said memory cell is accomplished the drain current of said memory cell is reduced to be below that of the current of said reference branch of said current mirror, thereby the current of said output branch is also reduced to be below the current of the reference branch.
Claim 2
Dependent Claim
125 words
A circuit for fast programming of semiconductor memory cells and for ease of testing to verify the condition of memory chips comprising: a current mirror including a reference branch and multiple output branches; at least one of said output branches is connected to a programmable memory cell through one or more FET transistors so that programming current flows from said output branch to said memory cell to supply it with programming current; whereby when the programming of said memory cell is accomplished the drain current of said memory cell is reduced to be below that of the current of said reference branch of said current mirror, thereby the current of said output branch is also reduced to be below the current of the reference branch.
Claim 3
Dependent Claim
59 words
The circuit of claim 1 further comprising a circuit arrangement wherein the programming current supplied by at least one of said output branches to at least two programmable memory cells through said one or more FET transistors is supplied by a charge pump to flow from said output branch to said memory cells to supply them with programming current.
Claim 4
Dependent Claim
59 words
The circuit of claim 1 further comprising a circuit arrangement wherein the programming current supplied by at least one of said output branches to at least two programmable memory cells through said one or more FET transistors is supplied by a voltage multiplier to flow from said output branch to said memory cells to supply them with programming current.
Claim 5
Dependent Claim
56 words
The circuit of claim 1 further comprising a circuit arrangement wherein the current supplied by at least one of said output branches is connected to at least two programmable memory cells through one or more FET transistors so that programming current flows from said output branch to said memory cells to supply them with programming current.
Claim 6
Dependent Claim
59 words
The circuit of claim 4 further comprising a circuit arrangement wherein the programming current supplied by at least one of said output branches to at least two programmable memory cells through said one or more FET transistors is supplied by a charge pump to flow from said output branch to said memory cells to supply them with programming current.
Claim 7
Dependent Claim
59 words
The circuit of claim 4 further comprising a circuit arrangement wherein the programming current supplied by at least one of said output branches to at least two programmable memory cells through said one or more FET transistors is supplied by a voltage multiplier to flow from said output branch to said memory cells to supply them with programming current.
Claim 8
Dependent Claim
30 words
The circuit of claim 1 wherein said current of said output branch that is supplied to said memory cell is reduced to zero after the programming of said memory cell.
Claim 9
Dependent Claim
127 words
A power switching circuit included in a programmable non-volatile memory chip, said power switch including: a VCC receiving means; a VPP receiving means; a VSS receiving means; a current mirror having a reference branch, a first output branch and a second output branch; a first FET transistor connecting said VCC means and said first output branch; a second FET transistor connecting said VCC means and said second output branch; said reference branch, said first FET and said second FET having a common control input; said power switch operable to supply VCC voltage to said first and second outputs during read operations of said memory chip; and said power switch operable to supply VPP voltage to said first and second outputs during write operations of said memory chip.
Claim 10
Dependent Claim
127 words
A power switching circuit included in a programmable non-volatile memory chip, said power switch including: a VCC receiving means; a VPP receiving means; a VSS receiving means; a current mirror having a reference branch, a first output branch and a second output branch; a first FET transistor connecting said VCC means and said first output branch; a second FET transistor connecting said VCC means and said second output branch; said reference branch, said first FET and said second FET having a common control input; said power switch operable to supply VCC voltage to said first and second outputs during read operations of said memory chip; and said power switch operable to supply VPP voltage to said first and second outputs during write operations of said memory chip.
References Cited (Backward Citations)
US5313429A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-18 | 2001-02-17 | 2001-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-18 | 2005-02-17 | 2005-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-18 | 2009-02-17 | 2009-08-19 | $7700.00 | Window Closed / Lapsed |