US5986916A
Expired / Lapsed
US
⏱️ 0.0 years remaining
On-chip program voltage generator for antifuse repair
Assignee: Round Rock Research LLC
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Filing: 1997-08-20
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Granted: 1999-11-16
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Expires: 2017-08-20
Abstract
Abstract A voltage generator is provided in a DRAM to generate the appropriate voltage for programming antifuses. In one embodiment of the present invention, a high voltage charge pump is provided on a DRAM product to generate the high voltage necessary for programming antifuses. In one embodiment, the high voltage charge pump includes a plurality of transistors in series to produce a programming voltage that is some multiple of the supply voltage to the memory less.
Inventors
- 👤 Todd A. Merritt
- 👤 Kevin Duesman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:37
CPC Classifications
G; G11; G11C; G11C7/00; G11C5/00; G11C5/14; G11C5/145; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/4074; G11C17/00; G11C17/14; G11C17/16
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
36 words
A dynamic random access memory, comprising: antifuse elements that are to be programmed; and at least one on-chip charge pump in the memory for generating pulses that are of sufficient voltage to program the antifuse elements.
Claim 2
Dependent Claim
36 words
A dynamic random access memory, comprising: antifuse elements that are to be programmed; and at least one on-chip charge pump in the memory for generating pulses that are of sufficient voltage to program the antifuse elements.
Claim 3
Dependent Claim
54 words
The dynamic random access memory of claim 1 wherein the on-chip charge pump includes N transistors in series to produce a programming voltage that is approximately equal to N+1 times a supply voltage to the integrated circuit less the sum of the threshold voltages of the N transistors, wherein N is a positive integer.
Claim 4
Dependent Claim
10 words
The dynamic random access memory of claim 2, wherein N=4.
Claim 5
Dependent Claim
57 words
A dynamic random access memory, comprising: at least one antifuse element; at least one on-chip charge pump that is coupled to one side of the antifuse elements for generating a programming pulse to each antifuse element; and a transistor operatively coupled to the second side of the antifuse element for enabling the programming of the antifuse element.
Claim 6
Dependent Claim
57 words
A dynamic random access memory, comprising: at least one antifuse element; at least one on-chip charge pump that is coupled to one side of the antifuse elements for generating a programming pulse to each antifuse element; and a transistor operatively coupled to the second side of the antifuse element for enabling the programming of the antifuse element.
Claim 7
Dependent Claim
44 words
A dynamic random access memory, comprising: at least one one-time programmable element; and an on-chip charge pump which is operatively coupled to one side of the at least one one-time programmable element and which is configured to generate a programming pulse at its output.
Claim 8
Dependent Claim
44 words
A dynamic random access memory, comprising: at least one one-time programmable element; and an on-chip charge pump which is operatively coupled to one side of the at least one one-time programmable element and which is configured to generate a programming pulse at its output.
Claim 9
Dependent Claim
27 words
The dynamic random access memory of claim 5, wherein it further comprises: a switch which is enabled to permit the programming voltage to program the programmable element.
Claim 10
Dependent Claim
25 words
The dynamic random access memory of claim 6, wherein the switch is a transistor that is coupled to the second side of the programmable element.
Claim 11
Dependent Claim
61 words
A dynamic random access memory comprising: at least one one-time programmable element; at least one on-chip charge pump that is coupled to one side of the one-time programmable element for generating a programming pulse to each one-time programmable element; and a transistor operatively coupled to the second side of the one-time programmable element for enabling the programming of the programmable element.
Claim 12
Dependent Claim
61 words
A dynamic random access memory comprising: at least one one-time programmable element; at least one on-chip charge pump that is coupled to one side of the one-time programmable element for generating a programming pulse to each one-time programmable element; and a transistor operatively coupled to the second side of the one-time programmable element for enabling the programming of the programmable element.
Claim 13
Dependent Claim
38 words
A dynamic random-access memory comprising: a one-time programmable element; and an on-chip charge pump which is operatively coupled to one side of the one-time programmable element and which is configured to generate a programming pulse at its output.
Claim 14
Dependent Claim
38 words
A dynamic random-access memory comprising: a one-time programmable element; and an on-chip charge pump which is operatively coupled to one side of the one-time programmable element and which is configured to generate a programming pulse at its output.
Claim 15
Dependent Claim
15 words
The dynamic random access memory of claim 5, wherein the programmable element is an antifuse.
Claim 16
Dependent Claim
15 words
The dynamic random access memory of claim 9, wherein the programmable element is an antifuse.
References Cited (Backward Citations)
US5677888A
Cited
US5604693A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-15 | 2003-05-17 | 2003-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-15 | 2007-05-17 | 2007-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-15 | 2011-05-17 | 2011-11-16 | $7700.00 | Window Closed / Lapsed |