Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
263 words
A circuit comprising: a first antifuse; a second antifuse; an output node; a program circuit for coupling a programming voltage across the first and second antifuses, the program circuit including: a program terminal; a voltage bias circuit having a control terminal coupled to the program terminal and having a voltage node; a first PMOS transistor having a source coupled to a first voltage source, a drain coupled to a terminal of the first antifuse, and a gate coupled to the program terminal; and a first NMOS transistor having a source coupled to a second voltage source, a drain coupled to the second antifuse, and a gate coupled to the voltage node of the voltage bias circuit, wherein the voltage bias circuit includes: a second PMOS transistor having a source coupled to the first voltage source, a drain coupled to the voltage node, and a gate coupled to the program terminal; a second NMOS transistor having a drain and a gate coupled to the voltage node and having a source; and a third NMOS transistor having a drain and a gate coupled to the second NMOS transistor source and having a source coupled to the second voltage source; a read circuit for coupling a read voltage across the first and second antifuses and for coupling the first and second antifuses to the output node; wherein when at least one of the first and second antifuses is programmed, the circuit is in a programmed state, the programmed state being the same when either the first antifuse, the second anti fuse or both antifuses are programmed.
Claim 2
Dependent Claim
263 words
A circuit comprising: a first antifuse; a second antifuse; an output node; a program circuit for coupling a programming voltage across the first and second antifuses, the program circuit including: a program terminal; a voltage bias circuit having a control terminal coupled to the program terminal and having a voltage node; a first PMOS transistor having a source coupled to a first voltage source, a drain coupled to a terminal of the first antifuse, and a gate coupled to the program terminal; and a first NMOS transistor having a source coupled to a second voltage source, a drain coupled to the second antifuse, and a gate coupled to the voltage node of the voltage bias circuit, wherein the voltage bias circuit includes: a second PMOS transistor having a source coupled to the first voltage source, a drain coupled to the voltage node, and a gate coupled to the program terminal; a second NMOS transistor having a drain and a gate coupled to the voltage node and having a source; and a third NMOS transistor having a drain and a gate coupled to the second NMOS transistor source and having a source coupled to the second voltage source; a read circuit for coupling a read voltage across the first and second antifuses and for coupling the first and second antifuses to the output node; wherein when at least one of the first and second antifuses is programmed, the circuit is in a programmed state, the programmed state being the same when either the first antifuse, the second anti fuse or both antifuses are programmed.
Claim 3
Dependent Claim
25 words
The circuit as in claim 1 further comprising: a discharge circuit coupled between the gate of the second NMOS transistor and a third voltage source.
Claim 4
Dependent Claim
237 words
A circuit comprising; a first antifuse; a second anti fuse; an output node; a program circuit for coupling a programming voltage across the first and second antifuses; a read circuit for coupling a read voltage across the first and second anti fuses and for coupling the first and second antifuses to the output node, the read circuit including: a READ terminal; a FUSE -- OUT terminal; a READ OUTPUT node coupled to a terminal of the first antifuse; a first PMOS transistor having a source coupled to a first voltage source, a drain coupled to the READ OUTPUT node, and a gate coupled to the READ terminal; a second PMOS transistor having a source coupled to the READ OUTPUT node, a drain coupled to the FUSE -- OUT terminal, and a gate coupled to the READ terminal; a first NMOS transistor having a gate coupled to the READ OUTPUT node, a source coupled to a second voltage source, and a drain coupled to the second antifuse; and a second NMOS transistor having a gate coupled to the first NMOS transistor drain, a drain coupled to the READ OUTPUT node, and a source coupled to the second voltage source; wherein when at least one of the first and second antifuses is programmed, the circuit is in a programmed state, the programmed state being the same when either the first antifuse, the second antifuse or both antifuses are programmed.
Claim 5
Dependent Claim
237 words
A circuit comprising; a first antifuse; a second anti fuse; an output node; a program circuit for coupling a programming voltage across the first and second antifuses; a read circuit for coupling a read voltage across the first and second anti fuses and for coupling the first and second antifuses to the output node, the read circuit including: a READ terminal; a FUSE -- OUT terminal; a READ OUTPUT node coupled to a terminal of the first antifuse; a first PMOS transistor having a source coupled to a first voltage source, a drain coupled to the READ OUTPUT node, and a gate coupled to the READ terminal; a second PMOS transistor having a source coupled to the READ OUTPUT node, a drain coupled to the FUSE -- OUT terminal, and a gate coupled to the READ terminal; a first NMOS transistor having a gate coupled to the READ OUTPUT node, a source coupled to a second voltage source, and a drain coupled to the second antifuse; and a second NMOS transistor having a gate coupled to the first NMOS transistor drain, a drain coupled to the READ OUTPUT node, and a source coupled to the second voltage source; wherein when at least one of the first and second antifuses is programmed, the circuit is in a programmed state, the programmed state being the same when either the first antifuse, the second antifuse or both antifuses are programmed.