US5604693A
Expired / Lapsed
US
⏱️ 0.0 years remaining
On-chip program voltage generator for antifuse repair
Assignee: Round Rock Research LLC
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Filing: 1995-08-16
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Granted: 1997-02-18
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Expires: 2015-08-16
Abstract
Abstract A voltage generator is provided for use in a DRAM to generate an appropriate voltage for programming antifuses. This voltage generator is preferably implemented using a charge pump to generate the high voltage necessary for programming antifuses.
Inventors
- 👤 Todd A. Merritt
- 👤 Kevin Duesman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 02:04
CPC Classifications
G; G11; G11C; G11C7/00; G11C5/00; G11C5/14; G11C5/145; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/4074; G11C17/00; G11C17/14; G11C17/16
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
78 words
Circuitry in a dynamic random access memory for generating pulses for programming anti fuse elements, comprising: an oscillator for generating clocking signals; a phase generator responsive to the clocking signals of the oscillator for generating a plurality of timing pulses whose active states are sequential in time from one another; and a high voltage charge pump that is responsive to the timing pulses from the phase generator to produce a voltage sufficient in magnitude to program antifuse elements.
Claim 2
Dependent Claim
78 words
Circuitry in a dynamic random access memory for generating pulses for programming anti fuse elements, comprising: an oscillator for generating clocking signals; a phase generator responsive to the clocking signals of the oscillator for generating a plurality of timing pulses whose active states are sequential in time from one another; and a high voltage charge pump that is responsive to the timing pulses from the phase generator to produce a voltage sufficient in magnitude to program antifuse elements.
Claim 3
Dependent Claim
68 words
The circuitry of claim 1, wherein the phase generator generates four sequential timing pulses and wherein the high voltage charge pump includes four transistors in series which are respectively responsive to the four sequential timing pulses to produce a programming voltage which is approximately equal to five times the supply voltage (V cc ) to the memory less the sum of the threshold voltages of the four transistors.
References Cited (Backward Citations)
US3245015A
Cited
US3529299A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-18 | 2000-08-19 | 2001-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-18 | 2004-08-19 | 2005-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-18 | 2008-08-19 | 2009-02-18 | $7700.00 | Window Closed / Lapsed |