US5986318A
Expired / Lapsed
US
⏱️ 0.0 years remaining
(Ge,Si) Nx anti-reflective compositions and integrated circuit devices comprising the same
Assignee: Samsung Electronics Co Ltd
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Filing: 1997-10-23
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Granted: 1999-11-16
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Expires: 2017-10-23
Abstract
Abstract An anti-reflective composition used in manufacturing integrated circuit devices comprises a silicon-added germanium nitride material. The composition is present in a solid solution.
Inventors
- 👤 Yong-beom Kim
- 👤 Dong-wan Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:13
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; H; H10; H10P; H10P76/00; G03F7/091; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10P76/40; H10P76/405
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
27 words
An anti-reflective composition used in manufacturing integrated circuit devices, said composition being present in a solid solution, and wherein said composition comprises a silicon-added germanium nitride material.
Claim 2
Dependent Claim
27 words
An anti-reflective composition used in manufacturing integrated circuit devices, said composition being present in a solid solution, and wherein said composition comprises a silicon-added germanium nitride material.
Claim 3
Dependent Claim
16 words
An anti-reflective composition according to claim 1, wherein said composition comprises 0.8 atomic percent of silicon.
Claim 4
Dependent Claim
29 words
An anti-reflective composition according to claim 1, wherein said composition further comprises an element selected from the group consisting of oxygen, tin, lead, carbon, hydrogen, fluorine, and mixtures thereof.
Claim 5
Dependent Claim
28 words
An anti-reflective composition according to claim 1, wherein the ratio of germanium to silicon ranges from about 0.01 to about 100 based on atomic percentages of the components.
Claim 6
Dependent Claim
37 words
An anti-reflective composition according to claim 1, wherein said composition comprises 24.3 atomic percent of germanium, 6.5 atomic percent of nitrogen, 53.6 atomic percent of oxygen, 14.8 atomic percent of carbon, and 0.8 atomic percent of silicon.
Claim 7
Dependent Claim
27 words
An anti-reflective composition according to claim 1, wherein said silicon-added germanium nitride material is represented by the formula: (Ge.sub.3 Si.sub.3-x)N.sub.4 wherein x ranges from 0 to 3.
Claim 8
Dependent Claim
35 words
An anti-reflective layer used in manufacturing an integrated circuit device, said layer being formed from an anti-reflective composition which is present in a solid solution, and wherein said composition comprises a silicon-added germanium nitride material.
Claim 9
Dependent Claim
35 words
An anti-reflective layer used in manufacturing an integrated circuit device, said layer being formed from an anti-reflective composition which is present in a solid solution, and wherein said composition comprises a silicon-added germanium nitride material.
Claim 10
Dependent Claim
16 words
An anti-reflective layer according to claim 7, wherein the composition comprises 0.8 atomic percent of silicon.
Claim 11
Dependent Claim
30 words
An anti-reflective layer according to claim 7, wherein said anti-reflective composition further comprises an element selected from the group consisting of oxygen, tin, lead, carbon, hydrogen, fluorine, and mixtures thereof.
Claim 12
Dependent Claim
28 words
An anti-reflective layer according to claim 7, wherein the ratio of germanium to silicon ranges from about 0.01 to about 100 based on atomic percentages of the components.
Claim 13
Dependent Claim
38 words
An anti-reflective layer according to claim 7, wherein said anti-reflective composition comprises 24.3 atomic percent of germanium, 6.5 atomic percent of nitrogen, 53.6 atomic percent of oxygen, 14.8 atomic percent of carbon, and 0.8 atomic percent of silicon.
Claim 14
Dependent Claim
27 words
An anti-reflective layer according to claim 7, wherein said silicon-added germanium nitride material is represented by the formula: (Ge.sub.3 Si.sub.3-x)N.sub.4 wherein x ranges from 0 to 3.
Claim 15
Dependent Claim
19 words
An anti-reflective layer according to claim 7, wherein said layer has a thickness of at least about 5 nm.
Claim 16
Dependent Claim
19 words
An anti-reflective layer according to claim 7, wherein said layer has a refractive index of at least about 1.5.
Claim 17
Dependent Claim
29 words
An anti-reflective layer according to claim 7, wherein said layer has an extinction coefficient of at least about 0.05 when an exposure wavelength is less than about 450 nm.
Claim 18
Dependent Claim
21 words
An integrated circuit device comprising an anti-reflective layer as recited in claim 7 and an underlayer positioned beneath said anti-reflective layer.
Claim 19
Dependent Claim
43 words
An integrated circuit device according to claim 16, wherein said underlayer comprises a material selected from the group consisting of tungsten, tungsten silicide, titanium silicide, cobalt silicide, polysilicon, aluminum, aluminum alloy, a polycide comprising a polysilicon and a metal silicide, and mixtures thereof.
References Cited (Backward Citations)
US4870322A
Cited
US5820926A
Cited
US5378659A
Cited
US5733712A
Cited
US5750442A
Cited
US5741626A
Cited
US5841179A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-15 | 2003-05-17 | 2003-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-15 | 2007-05-17 | 2007-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-15 | 2011-05-17 | 2011-11-16 | $7700.00 | Window Closed / Lapsed |