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US5985685A
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Method for making optical device with composite passive and tapered active waveguide regions
Assignee: IPG Photonics Corp
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Filing: 1998-09-29
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Granted: 1999-11-16
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Expires: 2018-09-29
Abstract
Abstract A semiconductor optical device, for example a laser, has a composite optical waveguide including a tapered, MQW active waveguide in optical contact with a substantially planar, passive waveguide. The fundamental optical mode supported by the composite waveguide varies along the length of the composite waveguide so that, in a laser, the laser mode is enlarged and is a better match to single mode optical fibre. A method for making such semiconductor optical devices is also disclosed.
Inventors
- 👤 Ian F. Lealman
- 👤 Michael J. Robertson
- 👤 Simon D. Perrin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:27
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/1228; B; B82; B82Y; B82Y20/00; G02B6/24; G02B6/26; G02B6/30; G02B6/305; G02B6/42; G02B6/4201; G02B6/4202; G02B6/4203; H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/20; H01S5/22; H01S5/227; G02B2006/12083; G02B2006/12121; G02B2006/12128; G02B2006/12166; G02B2006/12195; H01S5/10; H01S5/1003; H01S5/1014; H01S5/1028; H01S5/1039; H01S5/1053; H01S5/1064; H01S5/16; H01S5/2205; H01S5/2206; H01S5/2222; H01S5/30; H01S5/34; H01S5/3403; H01S5/3406; H01S5/343; H01S5/34306
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
108 words
A method for making a semiconductor optical device, the method comprising the steps of: (a) epitaxially growing a planar wafer on a substrate, the wafer comprising an optically active region above an optically passive region; (b) defining a first mesa comprising the active region; (c) forming a mask on the first mesa, the width of the mask being less than the width of said first mesa, the mask width varying along the length of the mask; and (d) defining a second mesa, of substantially the same width as the first mesa, which second mesa comprises the passive region, and redefining the first mesa to correspond to the mask.
Claim 2
Independent Claim
108 words
A method for making a semiconductor optical device, the method comprising the steps of: (a) epitaxially growing a planar wafer on a substrate, the wafer comprising an optically active region above an optically passive region; (b) defining a first mesa comprising the active region; (c) forming a mask on the first mesa, the width of the mask being less than the width of said first mesa, the mask width varying along the length of the mask; and (d) defining a second mesa, of substantially the same width as the first mesa, which second mesa comprises the passive region, and redefining the first mesa to correspond to the mask.
Claim 3
Dependent Claim
42 words
A method for making a semiconductor optical device as in claim 1 further comprising the steps of: (e) reducing the width of the active region by etching with a selective etchant; and (f) performing a heat treatment sufficient to cause material transport.
Claim 4
Dependent Claim
52 words
A method for making a semiconductor optical device as in claim 1 further comprising the steps of: (g) performing a first stage overgrowth to form optical and electrical confinement layers along the sides of said first and second mesas; and (h) performing a second stage overgrowth over the first and second mesas.
Claim 5
Dependent Claim
24 words
A method for making a semiconductor optical device as in claim 1 wherein step a is carried out using metal organic vapour phase epitaxy.
Claim 6
Dependent Claim
52 words
A method for making a semiconductor optical device as in claim 2 further comprising the steps of: (g) performing a first stage overgrowth to form optical and electrical confinement layers along the sides of said first and second mesas; and (h) performing a second stage overgrowth over the first and second mesas.
Claim 7
Dependent Claim
24 words
A method for making a semiconductor optical device as in claim 2 wherein step a is carried out using metal organic vapour phase epitaxy.
Claim 8
Dependent Claim
30 words
A method for making a semiconductor optical device as in claim 3 wherein at least one of steps g and h is carried out using metal organic vapour phase epitaxy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-15 | 2003-05-17 | 2003-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-15 | 2007-05-17 | 2007-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-15 | 2011-05-17 | 2011-11-16 | $7700.00 | Window Closed / Lapsed |