Manufacture of semiconductor light emitting device

Abstract

Abstract PURPOSE:To improve the controllability of the width of an active layer and to improve the controllability and efficiency for burying high-resistance InP into an etching part formed in a double hetero junction by fabricating a semiconductor layer by a predetermined step. CONSTITUTION:On a p-InP substrate 1, a p-InP buffer layer 2, a p-InP cladding layer 3, a p-InGaAsP active layer 4, an n-InP cladding layer 5, and an n-InP cap layer 6 are laminated in order, after which a tungsten film 7 is vapor- deposited. Next, the film 7 is patterned to form a stripe electrode 8 which is then used as a mask for the mesa etching of the layer 6 to 3. Further, the layer 4 is over-etched. Subsequently, mass transportation is done to bury the active layer 4' by the InP layer 10. After that, the buried layer 11 consisting of InP crystal is epitaxially grown to fabricate a semiconductor laser.

Inventors

• 👤 Tamotsu Iwasaki
• 👤 保 岩崎
• 👤 Susumu Kashiwa
• 👤 柏　享

Bibliographic Details