US5981403A
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Layered silicon nitride deposition process
Assignee: Bell Semiconductor LLC
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Filing: 1997-11-24
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Granted: 1999-11-09
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Expires: 2017-11-24
Abstract
Abstract A semiconductor device process for forming a multilayered nitride structure. The nitride is used as either isolation or as part of a dielectric structure. The deposition rate for the nitride is varied to form a multilayered structure with stress accommodation at the interface between sub-layers in the multilayer structure. In addition, the sub-layered structure reduces pin-holes and microcracks in the nitride film and improves the overall uniformity in thickness of the final nitride film.
Inventors
- 👤 Yi Ma
- 👤 Sailesh Mansinh Merchant
- 👤 Pradip Kumar Roy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10P14/61; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
89 words
A method of making a semiconductor device comprising the steps of: a) forming an oxide layer; and b) forming a nitride layer to overlay the oxide layer, wherein the step of forming the nitride layer includes the steps of: 1) depositing a first nitride sub-layer at a first deposition rate; and 2) depositing a second nitride sub-layer at a second deposition rate that is different from said first rate; and 3) repeating steps 1) and 2) a predetermined number of times until a desired nitride deposited thickness is achieved.
Claim 2
Independent Claim
89 words
A method of making a semiconductor device comprising the steps of: a) forming an oxide layer; and b) forming a nitride layer to overlay the oxide layer, wherein the step of forming the nitride layer includes the steps of: 1) depositing a first nitride sub-layer at a first deposition rate; and 2) depositing a second nitride sub-layer at a second deposition rate that is different from said first rate; and 3) repeating steps 1) and 2) a predetermined number of times until a desired nitride deposited thickness is achieved.
Claim 3
Dependent Claim
25 words
The method as defined in claim 1 wherein in performing steps b1) and b2) the first deposition rate is lower than the second deposition rate.
Claim 4
Dependent Claim
41 words
The method as defined in claim 2 wherein in performing step b1), the deposition occurs at a temperature in the range of approximately 750-800° and in performing step b2), the deposition occurs at a temperature in the range of approximately 800-850°.
Claim 5
Dependent Claim
36 words
The method as defined in claim 2 wherein in performing step b1), the deposition occurs at a pressure of approximately 50mTorr and in performing step b2), the deposition occurs at a pressure of approximately 250 mTorr.
Claim 6
Dependent Claim
31 words
The method as defined in claim 2 wherein the first deposition rate is between 10 Å/min and 15 Å/min and the second deposition rate is between 30 Å/min and 50 Å/min.
Claim 7
Dependent Claim
23 words
The method as defined in claim 1 wherein in performing steps b1) and b2), the silicon content of the deposited nitride is varied.
Claim 8
Dependent Claim
43 words
The method as defined in claim 6 wherein in performing step b1) the ratio of NH 3 :SiH 2 Cl 2 is 3:1 or lower and in performing step b2) the ratio of NH 3 :SiH 2 Cl 2 is 6:1 or higher.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-11-08 | 2003-05-10 | 2003-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-08 | 2007-05-10 | 2007-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-08 | 2011-05-10 | 2011-11-09 | $7700.00 | Window Closed / Lapsed |