Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
106 words
A method for fabricating a nitride layer of a semiconductor integrated circuit on a semiconductor substrate in a processing chamber, comprising the steps of: (a) first applying source gases to said processing chamber; (b) depositing a first nitride layer over said semiconductor substrate according to said first applied source gases; (c) discontinuing said source gases; (d) pumping out said processing chamber; (e) second applying source gases to said processing chamber; (f) purging said processing chamber with nitrous oxide; and (g) depositing a second nitride layer upon said first nitride layer according to said second applied source gases to form a combined nitride layer after said purging.
Claim 2
Independent Claim
106 words
A method for fabricating a nitride layer of a semiconductor integrated circuit on a semiconductor substrate in a processing chamber, comprising the steps of: (a) first applying source gases to said processing chamber; (b) depositing a first nitride layer over said semiconductor substrate according to said first applied source gases; (c) discontinuing said source gases; (d) pumping out said processing chamber; (e) second applying source gases to said processing chamber; (f) purging said processing chamber with nitrous oxide; and (g) depositing a second nitride layer upon said first nitride layer according to said second applied source gases to form a combined nitride layer after said purging.
Claim 3
Dependent Claim
24 words
The semiconductor fabrication method of claim 1, comprising the further step of waiting a predetermined period of time between step (d) and step (f).
Claim 4
Dependent Claim
17 words
The semiconductor fabrication method of claim 2, wherein said predetermined period of time comprises approximately ten minutes.
Claim 5
Dependent Claim
18 words
The semiconductor fabrication method of claim 2, comprising the further step of purging said processing chamber with ammonia.
Claim 6
Dependent Claim
22 words
The semiconductor fabrication method of claim 1, comprising the further step of purging said processing chamber with nitrogen prior to step (f).
Claim 7
Dependent Claim
27 words
The semiconductor fabrication method of claim 5, wherein said step of purging said chamber with nitrogen is performed for a period of time greater than two minutes.
Claim 8
Dependent Claim
25 words
The semiconductor fabrication method of claim 6, comprising the step of purging said chamber with nitrogen for a period of time less than sixty minutes.
Claim 9
Dependent Claim
34 words
The semiconductor fabrication method of claim 5, wherein said purging of said chamber with nitrogen is performed at approximately 650° to approximately 900° C. at a pressure of approximately 50 to approximately 300 mtorr.
Claim 10
Dependent Claim
33 words
The semiconductor fabrication method of claim 1, wherein said step of purging said chamber with nitrous oxide is performed at a temperature of approximately 680° C. and a pressure of approximately 250 mtorr.
Claim 11
Dependent Claim
22 words
The semiconductor fabrication method of claim 1, comprising the step of pumping out said chamber after purging said chamber with nitrous oxide.
Claim 12
Dependent Claim
21 words
The semiconductor fabrication method of claim 1, comprising the further step of forming an oxide layer upon said first nitride layer.
Claim 13
Dependent Claim
24 words
The semiconductor fabrication method of claim 11, wherein the step of forming said oxide layer comprises applying dichlorosilane and nitrous oxide to said chamber.
Claim 14
Dependent Claim
32 words
The semiconductor fabrication method of claim 1, wherein the thickness of said first nitride layer is greater than approximately twenty percent of the combined thicknesses of said first and second nitride layers.
Claim 15
Dependent Claim
32 words
The semiconductor fabrication method of claim 13, wherein the thickness of said first nitride layer is less than approximately eighty percent of the combined thicknesses of said first and second nitride layers.
Claim 16
Dependent Claim
20 words
The semiconductor fabrication method of claim 14, wherein said combined thickness is between approximately twenty angstroms and two hundred angstroms.
Claim 17
Dependent Claim
18 words
The semiconductor fabrication method of claim 1, comprising the further step of purging said processing chamber with nitrogen.
Claim 18
Dependent Claim
20 words
The semiconductor fabrication method of claim 15, comprising the step of pumping out said chamber after said purge with nitrogen.